WO2011021872A3 - 3족 질화물 반도체 발광소자 및 그 제조방법 - Google Patents

3족 질화물 반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
WO2011021872A3
WO2011021872A3 PCT/KR2010/005510 KR2010005510W WO2011021872A3 WO 2011021872 A3 WO2011021872 A3 WO 2011021872A3 KR 2010005510 W KR2010005510 W KR 2010005510W WO 2011021872 A3 WO2011021872 A3 WO 2011021872A3
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WIPO (PCT)
Prior art keywords
nitride semiconductor
layer
group iii
iii nitride
emitting element
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PCT/KR2010/005510
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English (en)
French (fr)
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WO2011021872A2 (ko
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장문식
김서군
김창태
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주식회사 에피밸리
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Publication of WO2011021872A2 publication Critical patent/WO2011021872A2/ko
Publication of WO2011021872A3 publication Critical patent/WO2011021872A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 전자와 정공의 재결합에 의해 빛이 생성되는 활성층; 상기 활성층에 구비되고, 상기 활성층에 정공을 공급하는 p형 질화물 반도체층; 및 상기 p형 질화물 반도체층에 개재되며, MgN으로 도핑된 제2 p형층;을 포함하는 3족 질화물 반도체 발광소자에 관한 것이다. 또한, 본 개시는 3족 질화물 반도체 발광소자를 제조방법으로서, 상기 활성층 위에 제1 p형층을 구비하는 단계; 상기 제1 p형층 위에 MgN과 3족 질화물 반도체를 교대로 반복 성장시켜 상기 제2 p형층을 구비하는 단계; 및 상기 제2 p형층에 상기 제3 p형층을 구비하는 단계;을 포함하는 3족 질화물 반도체 발광소자의 제조방법에 관한 것이다.
PCT/KR2010/005510 2009-08-19 2010-08-19 3족 질화물 반도체 발광소자 및 그 제조방법 WO2011021872A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0076765 2009-08-19
KR1020090076765A KR20110019161A (ko) 2009-08-19 2009-08-19 3족 질화물 반도체 발광소자를 제조하는 방법

Publications (2)

Publication Number Publication Date
WO2011021872A2 WO2011021872A2 (ko) 2011-02-24
WO2011021872A3 true WO2011021872A3 (ko) 2011-07-07

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PCT/KR2010/005510 WO2011021872A2 (ko) 2009-08-19 2010-08-19 3족 질화물 반도체 발광소자 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR20110019161A (ko)
WO (1) WO2011021872A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107293622A (zh) * 2017-04-27 2017-10-24 华灿光电(苏州）有限公司 一种发光二极管的外延片及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101309506B1 (ko) * 2011-12-20 2013-09-23 (재)한국나노기술원 질화물계 반도체 발광소자 및 제조 방법
CN105304780A (zh) * 2014-06-25 2016-02-03 南通同方半导体有限公司 一种具有高空穴浓度的P-GaN蓝光LED外延结构
CN110311022B (zh) * 2019-05-31 2020-12-01 华灿光电（浙江）有限公司 GaN基发光二极管外延片及其制造方法
CN113451454B (zh) * 2020-09-17 2022-08-05 重庆康佳光电技术研究院有限公司 一种p型半导体层生长方法、led外延层及芯片
CN115295697B (zh) * 2022-10-09 2022-12-30 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000101135A (ja) * 1998-09-24 2000-04-07 Toshiba Corp 化合物半導体素子
KR20000061358A (ko) * 1999-03-25 2000-10-16 조장연 델타도핑을 이용한 질화물계 발광소자의 제작방법
JP2001007397A (ja) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd 窒化物半導体光素子及びその形成方法
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2006108487A (ja) * 2004-10-07 2006-04-20 ▲さん▼圓光電股▲ふん▼有限公司 窒化ガリウム系発光ダイオード
KR20090060784A (ko) * 2007-12-10 2009-06-15 삼성전기주식회사 질화갈륨계 발광소자

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000101135A (ja) * 1998-09-24 2000-04-07 Toshiba Corp 化合物半導体素子
KR20000061358A (ko) * 1999-03-25 2000-10-16 조장연 델타도핑을 이용한 질화물계 발광소자의 제작방법
JP2001007397A (ja) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd 窒化物半導体光素子及びその形成方法
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2006108487A (ja) * 2004-10-07 2006-04-20 ▲さん▼圓光電股▲ふん▼有限公司 窒化ガリウム系発光ダイオード
KR20090060784A (ko) * 2007-12-10 2009-06-15 삼성전기주식회사 질화갈륨계 발광소자

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107293622A (zh) * 2017-04-27 2017-10-24 华灿光电(苏州）有限公司 一种发光二极管的外延片及其制备方法
CN107293622B (zh) * 2017-04-27 2020-01-10 华灿光电(苏州）有限公司 一种发光二极管的外延片及其制备方法

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Publication number Publication date
WO2011021872A2 (ko) 2011-02-24
KR20110019161A (ko) 2011-02-25

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