JP3478090B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子

Info

Publication number
JP3478090B2
JP3478090B2 JP31127297A JP31127297A JP3478090B2 JP 3478090 B2 JP3478090 B2 JP 3478090B2 JP 31127297 A JP31127297 A JP 31127297A JP 31127297 A JP31127297 A JP 31127297A JP 3478090 B2 JP3478090 B2 JP 3478090B2
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
impurity concentration
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP31127297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177175A (ja
Inventor
慎一 長濱
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP31127297A priority Critical patent/JP3478090B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to EP98900171A priority patent/EP1017113B1/en
Priority to KR10-2003-7016457A priority patent/KR100530317B1/ko
Priority to CNB2006100044842A priority patent/CN100530719C/zh
Priority to PCT/JP1998/000025 priority patent/WO1998031055A1/ja
Priority to CNB988031280A priority patent/CN1297016C/zh
Priority to KR10-2004-7009207A priority patent/KR100491482B1/ko
Priority to HK00106092.4A priority patent/HK1026980B/xx
Priority to CNB2006100044861A priority patent/CN100485985C/zh
Priority to KR1020037016458A priority patent/KR100545999B1/ko
Priority to KR10-2001-7014993A priority patent/KR100398514B1/ko
Priority to KR10-2003-7007150A priority patent/KR100538313B1/ko
Priority to EP10183050.3A priority patent/EP2264794B1/en
Priority to CA2529996A priority patent/CA2529996C/en
Priority to CNB2006100044857A priority patent/CN100485984C/zh
Priority to KR1020037016459A priority patent/KR100625835B1/ko
Priority to CN2006101639592A priority patent/CN1964093B/zh
Priority to KR1020057012687A priority patent/KR100688240B1/ko
Priority to KR1020067017140A priority patent/KR100660152B1/ko
Priority to KR20037007078A priority patent/KR100399005B1/ko
Priority to KR1020067002224A priority patent/KR100644933B1/ko
Priority to KR10-1999-7006210A priority patent/KR100398516B1/ko
Priority to CN2006101639624A priority patent/CN1964094B/zh
Priority to TW087100203A priority patent/TW374267B/zh
Priority to KR10-2005-7012686A priority patent/KR100527349B1/ko
Priority to AU53420/98A priority patent/AU738480C/en
Priority to CA002276335A priority patent/CA2276335C/en
Priority to US09/004,925 priority patent/US6172382B1/en
Publication of JPH11177175A publication Critical patent/JPH11177175A/ja
Priority to US09/714,143 priority patent/US6677619B1/en
Priority to US10/601,582 priority patent/US6849864B2/en
Application granted granted Critical
Publication of JP3478090B2 publication Critical patent/JP3478090B2/ja
Priority to US11/026,062 priority patent/US7211822B2/en
Priority to US11/025,897 priority patent/US7615804B2/en
Priority to US12/570,907 priority patent/US8541794B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Semiconductor Lasers (AREA)
JP31127297A 1997-01-09 1997-10-27 窒化物半導体素子 Expired - Fee Related JP3478090B2 (ja)

Priority Applications (33)

Application Number Priority Date Filing Date Title
JP31127297A JP3478090B2 (ja) 1997-05-26 1997-10-27 窒化物半導体素子
KR20037007078A KR100399005B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
CNB2006100044842A CN100530719C (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
PCT/JP1998/000025 WO1998031055A1 (en) 1997-01-09 1998-01-08 Nitride semiconductor device
CNB988031280A CN1297016C (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
KR10-1999-7006210A KR100398516B1 (ko) 1997-01-09 1998-01-08 질화물 반도체 소자
HK00106092.4A HK1026980B (en) 1997-01-09 1998-01-08 Nitride semiconductor device
CNB2006100044861A CN100485985C (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
KR1020037016458A KR100545999B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
KR10-2001-7014993A KR100398514B1 (ko) 1997-01-09 1998-01-08 질화물 반도체 소자
KR10-2003-7007150A KR100538313B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
EP10183050.3A EP2264794B1 (en) 1997-01-09 1998-01-08 Nitride semiconductor device
CA2529996A CA2529996C (en) 1997-01-09 1998-01-08 Nitride semiconductor device
CNB2006100044857A CN100485984C (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
KR1020037016459A KR100625835B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
CN2006101639592A CN1964093B (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
EP98900171A EP1017113B1 (en) 1997-01-09 1998-01-08 Nitride semiconductor device
KR1020067017140A KR100660152B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
KR1020067002224A KR100644933B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
KR10-2003-7016457A KR100530317B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
KR10-2004-7009207A KR100491482B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
CN2006101639624A CN1964094B (zh) 1997-01-09 1998-01-08 氮化物半导体元器件
TW087100203A TW374267B (en) 1997-01-09 1998-01-08 Nitride semiconductor device
KR10-2005-7012686A KR100527349B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
AU53420/98A AU738480C (en) 1997-01-09 1998-01-08 Nitride semiconductor device
CA002276335A CA2276335C (en) 1997-01-09 1998-01-08 Nitride semiconductor device
KR1020057012687A KR100688240B1 (ko) 1997-01-09 1998-01-08 질화물반도체소자
US09/004,925 US6172382B1 (en) 1997-01-09 1998-01-09 Nitride semiconductor light-emitting and light-receiving devices
US09/714,143 US6677619B1 (en) 1997-01-09 2000-11-17 Nitride semiconductor device
US10/601,582 US6849864B2 (en) 1997-01-09 2003-06-24 Nitride semiconductor device
US11/026,062 US7211822B2 (en) 1997-01-09 2005-01-03 Nitride semiconductor device
US11/025,897 US7615804B2 (en) 1997-01-09 2005-01-03 Superlattice nitride semiconductor LD device
US12/570,907 US8541794B2 (en) 1997-01-09 2009-09-30 Nitride semiconductor light-emitting devices

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP13421097 1997-05-26
JP9-134210 1997-05-26
JP9-244342 1997-09-09
JP24434297 1997-09-09
JP9-274438 1997-10-07
JP27443897 1997-10-07
JP31127297A JP3478090B2 (ja) 1997-05-26 1997-10-27 窒化物半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2002260153A Division JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JPH11177175A JPH11177175A (ja) 1999-07-02
JP3478090B2 true JP3478090B2 (ja) 2003-12-10

Family

ID=40398642

Family Applications (3)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Country Status (1)

Country Link
JP (3) JP3478090B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6838705B1 (en) 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP2004055855A (ja) 2002-07-19 2004-02-19 Toyoda Gosei Co Ltd 通信装置
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
JP2006344689A (ja) 2005-06-07 2006-12-21 Rohm Co Ltd 半導体素子
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2007142198A (ja) 2005-11-18 2007-06-07 Rohm Co Ltd 半導体レーザ及び半導体レーザ製造方法
JP2008311579A (ja) 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
KR101007086B1 (ko) 2008-09-02 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011091289A (ja) * 2009-10-26 2011-05-06 Sony Corp 半導体素子の製造方法および半導体素子
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US8860077B2 (en) 2010-02-12 2014-10-14 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
JP2013098232A (ja) * 2011-10-28 2013-05-20 Sharp Corp 窒化物半導体レーザ素子
JP2014192475A (ja) * 2013-03-28 2014-10-06 Japan Oclaro Inc 窒化物光半導体素子及び光半導体装置
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置
JP7333504B2 (ja) 2020-11-16 2023-08-25 日亜化学工業株式会社 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ． Ｐａｒｔ２，３５ ［１Ｂ］ （１９９６），ｐ．Ｌ７４−Ｌ７６

Also Published As

Publication number Publication date
JP2003101154A (ja) 2003-04-04
JP4438274B2 (ja) 2010-03-24
JP2009027201A (ja) 2009-02-05
JP4947035B2 (ja) 2012-06-06
JPH11177175A (ja) 1999-07-02

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