TW374267B - Nitride semiconductor device - Google Patents

Nitride semiconductor device

Info

Publication number
TW374267B
TW374267B TW087100203A TW87100203A TW374267B TW 374267 B TW374267 B TW 374267B TW 087100203 A TW087100203 A TW 087100203A TW 87100203 A TW87100203 A TW 87100203A TW 374267 B TW374267 B TW 374267B
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
layer
conductive side
semiconductor device
present
Prior art date
Application number
TW087100203A
Other languages
Chinese (zh)
Inventor
Shinichi Nagahama
Masayuki Senoh
Shuji Nakamura
Original Assignee
Nichia Kagaku Kogyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31127297A external-priority patent/JP3478090B2/en
Application filed by Nichia Kagaku Kogyo Kk filed Critical Nichia Kagaku Kogyo Kk
Application granted granted Critical
Publication of TW374267B publication Critical patent/TW374267B/en

Links

Landscapes

  • Led Devices (AREA)

Abstract

The present invention relates to a nitride semiconductor device such as a light-emitting device, which forms an active layer between the n conductive side semiconductor area formed by one or more than two nitride semiconductor layer(s) and the p conductive side semiconductor area formed by one or more than two nitride semiconductor layer(s). The present invention is characterized in that at least one nitride semiconductor layer of said p conductive side or n conductive side semiconductor area is formed by a nitride semiconductor to produce a super lattice layer by laminating the first layer and the second layer of diverse constituents. Thus the current and the voltage used by the device can be reduced and the device efficiency can be increased.
TW087100203A 1997-01-09 1998-01-08 Nitride semiconductor device TW374267B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP193797 1997-01-09
JP1270797 1997-01-27
JP24434297 1997-09-09
JP27443897 1997-10-07
JP31127297A JP3478090B2 (en) 1997-05-26 1997-10-27 Nitride semiconductor device

Publications (1)

Publication Number Publication Date
TW374267B true TW374267B (en) 1999-11-11

Family

ID=57941835

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100203A TW374267B (en) 1997-01-09 1998-01-08 Nitride semiconductor device

Country Status (1)

Country Link
TW (1) TW374267B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730516B (en) * 2018-12-12 2021-06-11 日商闊斯泰股份有限公司 Nitride semiconductor substrate and nitride semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730516B (en) * 2018-12-12 2021-06-11 日商闊斯泰股份有限公司 Nitride semiconductor substrate and nitride semiconductor device

Similar Documents

Publication Publication Date Title
CA2276335A1 (en) Nitride semiconductor device
TW335558B (en) High temperature superconductivity in strained SiSiGe
EP1256985A3 (en) Lateral power MISFET
EP0800219A3 (en) Heterojunction pin photodiode
WO2002021594A3 (en) Improved chip crack stop design for semiconductor chips
TW200620657A (en) Recessed semiconductor device
DE69921189D1 (en) CONNECTION SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC COMPONENTS
EP2337095A3 (en) Scalable LED with improved current spreading structures
WO2002019432A3 (en) Trench mosfet with structure having low gate charge
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
EP1239522A3 (en) Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure and method of manufacturing the same
IL154945A0 (en) Semiconductor device and method of forming a semiconductor device
EP0971418A3 (en) Semiconductor device having reduced effective substrate resistivity and associated methods
TW200609995A (en) Semiconductor device and method of forming the same
EP1313147A3 (en) Power MOSFET device
SE9500152L (en) Method of providing an ohmic contact and semiconductor component provided with such ohmic contact
TW333713B (en) The semiconductor device and its producing method
KR910010735A (en) Semiconductor devices
EP1309011A3 (en) Semiconductor component and method of operation
TW200633188A (en) Methods and structures for electrical communication with an overlying electrode for a semiconductor element
KR970024265A (en) Semiconductor devices
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
EP1143526A3 (en) Field effect transistor and method of manufacturing the same
WO2004055868A3 (en) Integrated circuit modification using well implants
WO2002001643A3 (en) Soft recovery power diode and related method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees