JP2010157735A5 - - Google Patents
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- Publication number
- JP2010157735A5 JP2010157735A5 JP2009297727A JP2009297727A JP2010157735A5 JP 2010157735 A5 JP2010157735 A5 JP 2010157735A5 JP 2009297727 A JP2009297727 A JP 2009297727A JP 2009297727 A JP2009297727 A JP 2009297727A JP 2010157735 A5 JP2010157735 A5 JP 2010157735A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- barrier layer
- cladding layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 28
- 238000005253 cladding Methods 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 238000006243 chemical reaction Methods 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/347,392 US7953134B2 (en) | 2008-12-31 | 2008-12-31 | Semiconductor light-emitting device |
| US12/347,392 | 2008-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010157735A JP2010157735A (ja) | 2010-07-15 |
| JP2010157735A5 true JP2010157735A5 (enExample) | 2012-12-27 |
| JP5912217B2 JP5912217B2 (ja) | 2016-04-27 |
Family
ID=42284922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009297727A Active JP5912217B2 (ja) | 2008-12-31 | 2009-12-28 | 半導体発光素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7953134B2 (enExample) |
| JP (1) | JP5912217B2 (enExample) |
| CN (1) | CN101771120B (enExample) |
| TW (1) | TWI403002B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157647A (zh) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
| US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
| US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
| ES2952036T3 (es) | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
| US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
| US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
| US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
| US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
| DE102015109793A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| CN108770368B (zh) | 2016-01-15 | 2022-04-12 | 罗茵尼公司 | 透过设备上的罩盖进行背光照明的设备和方法 |
| US10693038B2 (en) * | 2017-11-22 | 2020-06-23 | Epistar Corporation | Semiconductor device |
| US11158995B2 (en) | 2018-06-01 | 2021-10-26 | Visual Photonics Epitaxy Co., Ltd. | Laser diode with defect blocking layer |
| DE102019106521A1 (de) | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement |
| US20230016028A1 (en) * | 2021-07-12 | 2023-01-19 | Tianjin Sanan Optoelectronics Co., Ltd. | Semiconductor light-emitting component and light-emitting device |
| DE102021132164A1 (de) | 2021-12-07 | 2023-06-07 | Osram Opto Semiconductors Gmbh | Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1279394C (en) | 1985-07-26 | 1991-01-22 | Naoki Chinone | Multiple quantum well type semiconductor laser |
| DE8710738U1 (de) * | 1986-06-07 | 1987-12-10 | Mitsuba Electric Mfg. Co., Ltd., Kiryu, Gumma | Pulsierungsschutzelement für eine Pumpe |
| JP2785167B2 (ja) * | 1992-06-29 | 1998-08-13 | 国際電信電話株式会社 | 多重量子井戸構造および多重量子井戸構造を用いた半導体素子 |
| JPH11186665A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 半導体発光素子 |
| US6803596B2 (en) | 1999-12-27 | 2004-10-12 | Sanyo Electric Co., Ltd. | Light emitting device |
| JP2002314126A (ja) * | 2001-04-10 | 2002-10-25 | Toshiba Corp | ＩｎＧａＡｌＰ系光半導体素子及びその製造方法 |
| CA2464083C (en) * | 2001-10-26 | 2011-08-02 | Ammono Sp. Z O.O. | Substrate for epitaxy |
| JP2003332694A (ja) * | 2002-05-17 | 2003-11-21 | Mitsubishi Electric Corp | 半導体レーザ |
| US7271418B2 (en) * | 2004-09-24 | 2007-09-18 | National Central University | Semiconductor apparatus for white light generation and amplification |
| JP2007042751A (ja) * | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | 半導体発光素子 |
| TWI282636B (en) | 2005-12-29 | 2007-06-11 | Epistar Corp | Semiconductor light-emitting device and manufacturing method thereof |
| CN101000940A (zh) * | 2006-01-09 | 2007-07-18 | 晶元光电股份有限公司 | 半导体发光元件及其制造方法 |
| CN101290957B (zh) * | 2007-04-16 | 2010-10-13 | 晶元光电股份有限公司 | 发光元件 |
-
2008
- 2008-12-31 US US12/347,392 patent/US7953134B2/en active Active
-
2009
- 2009-12-22 TW TW098144417A patent/TWI403002B/zh active
- 2009-12-28 JP JP2009297727A patent/JP5912217B2/ja active Active
- 2009-12-31 CN CN2009102661008A patent/CN101771120B/zh active Active
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