JP5912217B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

Info

Publication number
JP5912217B2
JP5912217B2 JP2009297727A JP2009297727A JP5912217B2 JP 5912217 B2 JP5912217 B2 JP 5912217B2 JP 2009297727 A JP2009297727 A JP 2009297727A JP 2009297727 A JP2009297727 A JP 2009297727A JP 5912217 B2 JP5912217 B2 JP 5912217B2
Authority
JP
Japan
Prior art keywords
layer
type
cladding layer
impurity
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009297727A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010157735A5 (enExample
JP2010157735A (ja
Inventor
チン ミン−タ
チン ミン−タ
ファン クオ−フェン
ファン クオ−フェン
シェン ピン−フェイ
シェン ピン−フェイ
ワン チン−ジェン
ワン チン−ジェン
チャン シー−パン
チャン シー−パン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2010157735A publication Critical patent/JP2010157735A/ja
Publication of JP2010157735A5 publication Critical patent/JP2010157735A5/ja
Application granted granted Critical
Publication of JP5912217B2 publication Critical patent/JP5912217B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
JP2009297727A 2008-12-31 2009-12-28 半導体発光素子 Active JP5912217B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/347,392 US7953134B2 (en) 2008-12-31 2008-12-31 Semiconductor light-emitting device
US12/347,392 2008-12-31

Publications (3)

Publication Number Publication Date
JP2010157735A JP2010157735A (ja) 2010-07-15
JP2010157735A5 JP2010157735A5 (enExample) 2012-12-27
JP5912217B2 true JP5912217B2 (ja) 2016-04-27

Family

ID=42284922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009297727A Active JP5912217B2 (ja) 2008-12-31 2009-12-28 半導体発光素子

Country Status (4)

Country Link
US (1) US7953134B2 (enExample)
JP (1) JP5912217B2 (enExample)
CN (1) CN101771120B (enExample)
TW (1) TWI403002B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157647A (zh) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US8941215B2 (en) 2012-09-24 2015-01-27 LuxVue Technology Corporation Micro device stabilization post
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
ES2952036T3 (es) 2013-06-12 2023-10-26 Rohinni Inc Teclado de retroiluminación con fuentes generadoras de luz depositadas
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN108770368B (zh) 2016-01-15 2022-04-12 罗茵尼公司 透过设备上的罩盖进行背光照明的设备和方法
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
US11158995B2 (en) 2018-06-01 2021-10-26 Visual Photonics Epitaxy Co., Ltd. Laser diode with defect blocking layer
DE102019106521A1 (de) 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
US20230016028A1 (en) * 2021-07-12 2023-01-19 Tianjin Sanan Optoelectronics Co., Ltd. Semiconductor light-emitting component and light-emitting device
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279394C (en) 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
DE8710738U1 (de) * 1986-06-07 1987-12-10 Mitsuba Electric Mfg. Co., Ltd., Kiryu, Gumma Pulsierungsschutzelement für eine Pumpe
JP2785167B2 (ja) * 1992-06-29 1998-08-13 国際電信電話株式会社 多重量子井戸構造および多重量子井戸構造を用いた半導体素子
JPH11186665A (ja) * 1997-12-25 1999-07-09 Sony Corp 半導体発光素子
US6803596B2 (en) 1999-12-27 2004-10-12 Sanyo Electric Co., Ltd. Light emitting device
JP2002314126A (ja) * 2001-04-10 2002-10-25 Toshiba Corp ＩｎＧａＡｌＰ系光半導体素子及びその製造方法
CA2464083C (en) * 2001-10-26 2011-08-02 Ammono Sp. Z O.O. Substrate for epitaxy
JP2003332694A (ja) * 2002-05-17 2003-11-21 Mitsubishi Electric Corp 半導体レーザ
US7271418B2 (en) * 2004-09-24 2007-09-18 National Central University Semiconductor apparatus for white light generation and amplification
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
TWI282636B (en) 2005-12-29 2007-06-11 Epistar Corp Semiconductor light-emitting device and manufacturing method thereof
CN101000940A (zh) * 2006-01-09 2007-07-18 晶元光电股份有限公司 半导体发光元件及其制造方法
CN101290957B (zh) * 2007-04-16 2010-10-13 晶元光电股份有限公司 发光元件

Also Published As

Publication number Publication date
CN101771120A (zh) 2010-07-07
CN101771120B (zh) 2012-07-25
US20100166033A1 (en) 2010-07-01
TWI403002B (zh) 2013-07-21
JP2010157735A (ja) 2010-07-15
US7953134B2 (en) 2011-05-31
TW201029236A (en) 2010-08-01

Similar Documents

Publication Publication Date Title
JP5912217B2 (ja) 半導体発光素子
US8692228B2 (en) Semiconductor light emitting device and wafer
JP4954536B2 (ja) 窒化物半導体発光素子
TWI443859B (zh) 包含多重量子井結構的光電半導體晶片
EP1204150A1 (en) Light-emitting semiconductor devices including wafer bonded heterostructures
JP2000349337A (ja) 窒化物半導体素子
JP2001036134A (ja) Ｉｉｉ族窒化物半導体超格子をベースとした単極発光装置
JP2008518440A (ja) Ｌｅｄ光の出力を改善するための方法および構造
JPH04212479A (ja) 半導体発光ダイオード
CN101180743A (zh) 氮化物半导体发光元件
CN115621383A (zh) 红光发光二极管外延结构及其制造方法
CN112802869A (zh) 单片集成氮化物发光波长可调节的白光led及制备方法
JP3724213B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP3484997B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP2010225657A (ja) 半導体レーザ構造
JP2010080741A (ja) 半導体発光素子
JP4645225B2 (ja) 半導体素子の製造方法
JPH09326508A (ja) 半導体光素子
JP2024131321A (ja) 発光素子およびその製造方法
CN116615808B (en) Multiple quantum well structure, light emitting diode and light emitting assembly
JP4055794B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP3723314B2 (ja) 半導体発光素子
JP2001189491A (ja) ＡｌＧａＩｎＰ発光ダイオード
JP2000269548A (ja) 窒化物半導体素子
JP2024131320A (ja) 発光素子および発光素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140313

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140822

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140901

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20141031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150728

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160401

R150 Certificate of patent or registration of utility model

Ref document number: 5912217

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250