TWI403002B - 半導體發光元件 - Google Patents
半導體發光元件 Download PDFInfo
- Publication number
- TWI403002B TWI403002B TW098144417A TW98144417A TWI403002B TW I403002 B TWI403002 B TW I403002B TW 098144417 A TW098144417 A TW 098144417A TW 98144417 A TW98144417 A TW 98144417A TW I403002 B TWI403002 B TW I403002B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type
- barrier
- confinement
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 230000004888 barrier function Effects 0.000 claims description 74
- 239000012535 impurity Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 7
- 230000004807 localization Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/347,392 US7953134B2 (en) | 2008-12-31 | 2008-12-31 | Semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201029236A TW201029236A (en) | 2010-08-01 |
| TWI403002B true TWI403002B (zh) | 2013-07-21 |
Family
ID=42284922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098144417A TWI403002B (zh) | 2008-12-31 | 2009-12-22 | 半導體發光元件 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7953134B2 (enExample) |
| JP (1) | JP5912217B2 (enExample) |
| CN (1) | CN101771120B (enExample) |
| TW (1) | TWI403002B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157647A (zh) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
| US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
| US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
| ES2952036T3 (es) | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
| US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
| US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
| US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
| US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
| DE102015109793A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| CN108770368B (zh) | 2016-01-15 | 2022-04-12 | 罗茵尼公司 | 透过设备上的罩盖进行背光照明的设备和方法 |
| US10693038B2 (en) * | 2017-11-22 | 2020-06-23 | Epistar Corporation | Semiconductor device |
| US11158995B2 (en) | 2018-06-01 | 2021-10-26 | Visual Photonics Epitaxy Co., Ltd. | Laser diode with defect blocking layer |
| DE102019106521A1 (de) | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement |
| US20230016028A1 (en) * | 2021-07-12 | 2023-01-19 | Tianjin Sanan Optoelectronics Co., Ltd. | Semiconductor light-emitting component and light-emitting device |
| DE102021132164A1 (de) | 2021-12-07 | 2023-06-07 | Osram Opto Semiconductors Gmbh | Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065886A1 (en) * | 2004-09-24 | 2006-03-30 | National Central University | Semiconductor apparatus for white light generation and amplification |
| US7420261B2 (en) * | 2001-10-26 | 2008-09-02 | Ammono Sp. Z O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1279394C (en) | 1985-07-26 | 1991-01-22 | Naoki Chinone | Multiple quantum well type semiconductor laser |
| DE8710738U1 (de) * | 1986-06-07 | 1987-12-10 | Mitsuba Electric Mfg. Co., Ltd., Kiryu, Gumma | Pulsierungsschutzelement für eine Pumpe |
| JP2785167B2 (ja) * | 1992-06-29 | 1998-08-13 | 国際電信電話株式会社 | 多重量子井戸構造および多重量子井戸構造を用いた半導体素子 |
| JPH11186665A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 半導体発光素子 |
| US6803596B2 (en) | 1999-12-27 | 2004-10-12 | Sanyo Electric Co., Ltd. | Light emitting device |
| JP2002314126A (ja) * | 2001-04-10 | 2002-10-25 | Toshiba Corp | ＩｎＧａＡｌＰ系光半導体素子及びその製造方法 |
| JP2003332694A (ja) * | 2002-05-17 | 2003-11-21 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2007042751A (ja) * | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | 半導体発光素子 |
| TWI282636B (en) | 2005-12-29 | 2007-06-11 | Epistar Corp | Semiconductor light-emitting device and manufacturing method thereof |
| CN101000940A (zh) * | 2006-01-09 | 2007-07-18 | 晶元光电股份有限公司 | 半导体发光元件及其制造方法 |
| CN101290957B (zh) * | 2007-04-16 | 2010-10-13 | 晶元光电股份有限公司 | 发光元件 |
-
2008
- 2008-12-31 US US12/347,392 patent/US7953134B2/en active Active
-
2009
- 2009-12-22 TW TW098144417A patent/TWI403002B/zh active
- 2009-12-28 JP JP2009297727A patent/JP5912217B2/ja active Active
- 2009-12-31 CN CN2009102661008A patent/CN101771120B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7420261B2 (en) * | 2001-10-26 | 2008-09-02 | Ammono Sp. Z O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
| US20060065886A1 (en) * | 2004-09-24 | 2006-03-30 | National Central University | Semiconductor apparatus for white light generation and amplification |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101771120A (zh) | 2010-07-07 |
| CN101771120B (zh) | 2012-07-25 |
| US20100166033A1 (en) | 2010-07-01 |
| JP2010157735A (ja) | 2010-07-15 |
| US7953134B2 (en) | 2011-05-31 |
| TW201029236A (en) | 2010-08-01 |
| JP5912217B2 (ja) | 2016-04-27 |
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