CN101771120B - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN101771120B
CN101771120B CN2009102661008A CN200910266100A CN101771120B CN 101771120 B CN101771120 B CN 101771120B CN 2009102661008 A CN2009102661008 A CN 2009102661008A CN 200910266100 A CN200910266100 A CN 200910266100A CN 101771120 B CN101771120 B CN 101771120B
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China
Prior art keywords
layer
type
barrier layer
confinement
active region
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CN2009102661008A
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English (en)
Chinese (zh)
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CN101771120A (zh
Inventor
金明达
黄国峰
沈秉非
王敬仁
张世邦
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Epistar Corp
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Epistar Corp
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Publication of CN101771120A publication Critical patent/CN101771120A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
CN2009102661008A 2008-12-31 2009-12-31 半导体发光元件 Active CN101771120B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/347,392 2008-12-31
US12/347,392 US7953134B2 (en) 2008-12-31 2008-12-31 Semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
CN101771120A CN101771120A (zh) 2010-07-07
CN101771120B true CN101771120B (zh) 2012-07-25

Family

ID=42284922

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009102661008A Active CN101771120B (zh) 2008-12-31 2009-12-31 半导体发光元件

Country Status (4)

Country Link
US (1) US7953134B2 (enExample)
JP (1) JP5912217B2 (enExample)
CN (1) CN101771120B (enExample)
TW (1) TWI403002B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157647A (zh) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US8941215B2 (en) 2012-09-24 2015-01-27 LuxVue Technology Corporation Micro device stabilization post
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
KR102049635B1 (ko) 2013-06-12 2019-11-28 로히니, 엘엘씨. 피착된 광-생성 소스에 의한 키보드 백라이팅
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
WO2017124109A1 (en) 2016-01-15 2017-07-20 Rohinni, LLC Apparatus and method of backlighting through a cover on the apparatus
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
US11158995B2 (en) 2018-06-01 2021-10-26 Visual Photonics Epitaxy Co., Ltd. Laser diode with defect blocking layer
DE102019106521A1 (de) 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
US20230016028A1 (en) * 2021-07-12 2023-01-19 Tianjin Sanan Optoelectronics Co., Ltd. Semiconductor light-emitting component and light-emitting device
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1575357A (zh) * 2001-10-26 2005-02-02 波兰商艾蒙诺公司 取向生长用基底
CN101000940A (zh) * 2006-01-09 2007-07-18 晶元光电股份有限公司 半导体发光元件及其制造方法
CN101290957A (zh) * 2007-04-16 2008-10-22 晶元光电股份有限公司 发光元件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279394C (en) 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
DE3718777A1 (de) * 1986-06-07 1987-12-17 Mitsuba Electric Mfg Co Pulsierungsschutzelement fuer eine pumpe
JP2785167B2 (ja) * 1992-06-29 1998-08-13 国際電信電話株式会社 多重量子井戸構造および多重量子井戸構造を用いた半導体素子
JPH11186665A (ja) * 1997-12-25 1999-07-09 Sony Corp 半導体発光素子
US6803596B2 (en) * 1999-12-27 2004-10-12 Sanyo Electric Co., Ltd. Light emitting device
JP2002314126A (ja) * 2001-04-10 2002-10-25 Toshiba Corp ＩｎＧａＡｌＰ系光半導体素子及びその製造方法
JP2003332694A (ja) * 2002-05-17 2003-11-21 Mitsubishi Electric Corp 半導体レーザ
US7271418B2 (en) * 2004-09-24 2007-09-18 National Central University Semiconductor apparatus for white light generation and amplification
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
TWI282636B (en) 2005-12-29 2007-06-11 Epistar Corp Semiconductor light-emitting device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1575357A (zh) * 2001-10-26 2005-02-02 波兰商艾蒙诺公司 取向生长用基底
CN101000940A (zh) * 2006-01-09 2007-07-18 晶元光电股份有限公司 半导体发光元件及其制造方法
CN101290957A (zh) * 2007-04-16 2008-10-22 晶元光电股份有限公司 发光元件

Also Published As

Publication number Publication date
US7953134B2 (en) 2011-05-31
TW201029236A (en) 2010-08-01
US20100166033A1 (en) 2010-07-01
JP5912217B2 (ja) 2016-04-27
CN101771120A (zh) 2010-07-07
JP2010157735A (ja) 2010-07-15
TWI403002B (zh) 2013-07-21

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