|
JP5524462B2
(ja)
*
|
2008-08-06 |
2014-06-18 |
シャープ株式会社 |
半導体装置
|
|
US20100207164A1
(en)
*
|
2008-08-22 |
2010-08-19 |
Daisuke Shibata |
Field effect transistor
|
|
DE102009018054B4
(de)
*
|
2009-04-21 |
2018-11-29 |
Infineon Technologies Austria Ag |
Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
|
|
US9219058B2
(en)
*
|
2010-03-01 |
2015-12-22 |
Infineon Technologies Americas Corp. |
Efficient high voltage switching circuits and monolithic integration of same
|
|
US8981380B2
(en)
*
|
2010-03-01 |
2015-03-17 |
International Rectifier Corporation |
Monolithic integration of silicon and group III-V devices
|
|
JP5056883B2
(ja)
|
2010-03-26 |
2012-10-24 |
サンケン電気株式会社 |
半導体装置
|
|
US9263439B2
(en)
|
2010-05-24 |
2016-02-16 |
Infineon Technologies Americas Corp. |
III-nitride switching device with an emulated diode
|
|
WO2011161791A1
(ja)
|
2010-06-24 |
2011-12-29 |
富士通株式会社 |
半導体装置
|
|
WO2012008027A1
(ja)
*
|
2010-07-14 |
2012-01-19 |
富士通株式会社 |
化合物半導体装置及びその製造方法
|
|
JP5620767B2
(ja)
|
2010-09-17 |
2014-11-05 |
パナソニック株式会社 |
半導体装置
|
|
WO2012055570A1
(de)
*
|
2010-10-28 |
2012-05-03 |
Microgan Gmbh |
Diodenschaltung
|
|
JP5692357B2
(ja)
|
2011-03-18 |
2015-04-01 |
富士通株式会社 |
化合物半導体装置及びその製造方法
|
|
US8541773B2
(en)
|
2011-05-02 |
2013-09-24 |
Intel Corporation |
Vertical tunneling negative differential resistance devices
|
|
JP5714987B2
(ja)
*
|
2011-06-14 |
2015-05-07 |
ルネサスエレクトロニクス株式会社 |
半導体装置及び半導体装置の製造方法
|
|
ITTO20110603A1
(it)
*
|
2011-07-08 |
2013-01-09 |
St Microelectronics Srl |
Dispositivo elettronico basato su un composto di gallio su un substrato di silicio, e relativo metodo di fabbricazione
|
|
US9281388B2
(en)
*
|
2011-07-15 |
2016-03-08 |
Infineon Technologies Americas Corp. |
Composite semiconductor device with a SOI substrate having an integrated diode
|
|
US9087812B2
(en)
*
|
2011-07-15 |
2015-07-21 |
International Rectifier Corporation |
Composite semiconductor device with integrated diode
|
|
US8674372B2
(en)
*
|
2011-08-19 |
2014-03-18 |
Infineon Technologies Austria Ag |
HEMT with integrated low forward bias diode
|
|
US9224828B2
(en)
*
|
2011-10-11 |
2015-12-29 |
Avogy, Inc. |
Method and system for floating guard rings in gallium nitride materials
|
|
US8778788B2
(en)
|
2011-10-11 |
2014-07-15 |
Avogy, Inc. |
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
|
|
JP5678866B2
(ja)
|
2011-10-31 |
2015-03-04 |
株式会社デンソー |
半導体装置およびその製造方法
|
|
JP5306438B2
(ja)
*
|
2011-11-14 |
2013-10-02 |
シャープ株式会社 |
電界効果トランジスタおよびその製造方法
|
|
US8872235B2
(en)
|
2012-02-23 |
2014-10-28 |
Infineon Technologies Austria Ag |
Integrated Schottky diode for HEMTs
|
|
KR101920715B1
(ko)
*
|
2012-03-06 |
2018-11-21 |
삼성전자주식회사 |
고 전자 이동도 트랜지스터 및 그 제조방법
|
|
US9165839B2
(en)
|
2012-03-13 |
2015-10-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Plasma protection diode for a HEMT device
|
|
JP5935425B2
(ja)
|
2012-03-19 |
2016-06-15 |
富士通株式会社 |
半導体装置
|
|
JP5659182B2
(ja)
|
2012-03-23 |
2015-01-28 |
株式会社東芝 |
窒化物半導体素子
|
|
JP5696083B2
(ja)
|
2012-03-26 |
2015-04-08 |
株式会社東芝 |
窒化物半導体素子及びその製造方法
|
|
US9093420B2
(en)
|
2012-04-18 |
2015-07-28 |
Rf Micro Devices, Inc. |
Methods for fabricating high voltage field effect transistor finger terminations
|
|
DE102012207501B4
(de)
*
|
2012-05-07 |
2017-03-02 |
Forschungsverbund Berlin E.V. |
Halbleiterschichtenstruktur
|
|
US9124221B2
(en)
|
2012-07-16 |
2015-09-01 |
Rf Micro Devices, Inc. |
Wide bandwidth radio frequency amplier having dual gate transistors
|
|
US9142620B2
(en)
|
2012-08-24 |
2015-09-22 |
Rf Micro Devices, Inc. |
Power device packaging having backmetals couple the plurality of bond pads to the die backside
|
|
US9917080B2
(en)
|
2012-08-24 |
2018-03-13 |
Qorvo US. Inc. |
Semiconductor device with electrical overstress (EOS) protection
|
|
US9147632B2
(en)
|
2012-08-24 |
2015-09-29 |
Rf Micro Devices, Inc. |
Semiconductor device having improved heat dissipation
|
|
US9202874B2
(en)
|
2012-08-24 |
2015-12-01 |
Rf Micro Devices, Inc. |
Gallium nitride (GaN) device with leakage current-based over-voltage protection
|
|
US8988097B2
(en)
|
2012-08-24 |
2015-03-24 |
Rf Micro Devices, Inc. |
Method for on-wafer high voltage testing of semiconductor devices
|
|
US9129802B2
(en)
|
2012-08-27 |
2015-09-08 |
Rf Micro Devices, Inc. |
Lateral semiconductor device with vertical breakdown region
|
|
US9070761B2
(en)
|
2012-08-27 |
2015-06-30 |
Rf Micro Devices, Inc. |
Field effect transistor (FET) having fingers with rippled edges
|
|
US10094988B2
(en)
*
|
2012-08-31 |
2018-10-09 |
Micron Technology, Inc. |
Method of forming photonics structures
|
|
KR20140042460A
(ko)
*
|
2012-09-28 |
2014-04-07 |
삼성전자주식회사 |
반도체 소자
|
|
US9325281B2
(en)
|
2012-10-30 |
2016-04-26 |
Rf Micro Devices, Inc. |
Power amplifier controller
|
|
WO2014103126A1
(ja)
|
2012-12-26 |
2014-07-03 |
パナソニック株式会社 |
サージ保護素子及び半導体装置
|
|
CN103117303B
(zh)
*
|
2013-02-07 |
2016-08-17 |
苏州晶湛半导体有限公司 |
一种氮化物功率器件及其制造方法
|
|
EP2793255B8
(en)
*
|
2013-04-16 |
2018-01-17 |
IMEC vzw |
Manufacturing method of a semiconductor device comprising a schottky diode and a high electron mobility transistor
|
|
JP6052068B2
(ja)
|
2013-06-07 |
2016-12-27 |
株式会社デンソー |
半導体装置の保護回路
|
|
JP6534791B2
(ja)
|
2013-12-16 |
2019-06-26 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
US9779988B2
(en)
*
|
2013-12-20 |
2017-10-03 |
Nxp Usa, Inc. |
Semiconductor devices with inner via
|
|
JP6251071B2
(ja)
*
|
2014-02-05 |
2017-12-20 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
US9276160B2
(en)
*
|
2014-05-27 |
2016-03-01 |
Opel Solar, Inc. |
Power semiconductor device formed from a vertical thyristor epitaxial layer structure
|
|
US9455327B2
(en)
|
2014-06-06 |
2016-09-27 |
Qorvo Us, Inc. |
Schottky gated transistor with interfacial layer
|
|
US20160005816A1
(en)
*
|
2014-07-02 |
2016-01-07 |
International Rectifier Corporation |
Group III-V Transistor with Voltage Controlled Substrate
|
|
US9536803B2
(en)
|
2014-09-05 |
2017-01-03 |
Qorvo Us, Inc. |
Integrated power module with improved isolation and thermal conductivity
|
|
US9741711B2
(en)
|
2014-10-28 |
2017-08-22 |
Semiconductor Components Industries, Llc |
Cascode semiconductor device structure and method therefor
|
|
FR3028666A1
(fr)
*
|
2014-11-17 |
2016-05-20 |
Commissariat Energie Atomique |
Circuit integre a structure de commutation de puissance
|
|
US10062684B2
(en)
|
2015-02-04 |
2018-08-28 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
US10615158B2
(en)
|
2015-02-04 |
2020-04-07 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
JP6552925B2
(ja)
*
|
2015-09-04 |
2019-07-31 |
株式会社東芝 |
半導体装置
|
|
WO2017052562A1
(en)
|
2015-09-24 |
2017-03-30 |
Intel Corporation |
Methods of forming backside self-aligned vias and structures formed thereby
|
|
EP3440705A4
(en)
|
2016-04-01 |
2019-11-13 |
INTEL Corporation |
TRANSISTOR CELLS WITH A DEEP CONTACT WITH CLADDING OF DIELECTRIC MATERIAL
|
|
KR102886320B1
(ko)
|
2016-08-26 |
2025-11-14 |
인텔 코포레이션 |
집적 회로 디바이스 구조체들 및 양면 제조 기술들
|
|
US10224426B2
(en)
|
2016-12-02 |
2019-03-05 |
Vishay-Siliconix |
High-electron-mobility transistor devices
|
|
US10381473B2
(en)
*
|
2016-12-02 |
2019-08-13 |
Vishay-Siliconix |
High-electron-mobility transistor with buried interconnect
|
|
US11139241B2
(en)
|
2016-12-07 |
2021-10-05 |
Intel Corporation |
Integrated circuit device with crenellated metal trace layout
|
|
DE102017103111B4
(de)
*
|
2017-02-16 |
2025-03-13 |
Semikron Elektronik Gmbh & Co. Kg |
Halbleiterdiode und elektronische Schaltungsanordnung hiermit
|
|
DE112017008080B4
(de)
|
2017-12-26 |
2025-12-31 |
Intel Corporation |
Gestapelte Transistoren mit zuletzt ausgebildetem Kontakt
|
|
US11205704B2
(en)
|
2018-02-01 |
2021-12-21 |
Mitsubishi Electric Corporation |
Semiconductor device and production method therefor
|
|
US11430814B2
(en)
|
2018-03-05 |
2022-08-30 |
Intel Corporation |
Metallization structures for stacked device connectivity and their methods of fabrication
|
|
JP7082508B2
(ja)
*
|
2018-03-22 |
2022-06-08 |
ローム株式会社 |
窒化物半導体装置
|
|
US10693288B2
(en)
|
2018-06-26 |
2020-06-23 |
Vishay SIliconix, LLC |
Protection circuits with negative gate swing capability
|
|
US10833063B2
(en)
|
2018-07-25 |
2020-11-10 |
Vishay SIliconix, LLC |
High electron mobility transistor ESD protection structures
|
|
FR3086797B1
(fr)
*
|
2018-09-27 |
2021-10-22 |
St Microelectronics Tours Sas |
Circuit electronique comprenant des diodes
|
|
US11688780B2
(en)
|
2019-03-22 |
2023-06-27 |
Intel Corporation |
Deep source and drain for transistor structures with back-side contact metallization
|
|
US11411099B2
(en)
*
|
2019-05-28 |
2022-08-09 |
Glc Semiconductor Group (Cq) Co., Ltd. |
Semiconductor device
|
|
CN111312712A
(zh)
*
|
2020-02-25 |
2020-06-19 |
英诺赛科（珠海）科技有限公司 |
半导体器件及其制造方法
|
|
FR3111738B1
(fr)
*
|
2020-06-19 |
2022-08-05 |
Commissariat Energie Atomique |
Dispositif micro-électronique à substrat isolé, et procédé de fabrication associé
|
|
DE112021004164T5
(de)
*
|
2020-09-08 |
2023-06-01 |
Rohm Co., Ltd. |
Halbleiterbauelement
|
|
CN115997287B
(zh)
*
|
2022-11-15 |
2024-04-05 |
英诺赛科（珠海）科技有限公司 |
氮化物基半导体ic芯片及其制造方法
|
|
US20240395804A1
(en)
*
|
2023-05-26 |
2024-11-28 |
Cambridge Gan Devices Limited |
Power semiconductor device comprising a wide bandgap substrate
|