JP2006511961A5 - - Google Patents

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JP2006511961A5
JP2006511961A5 JP2004565192A JP2004565192A JP2006511961A5 JP 2006511961 A5 JP2006511961 A5 JP 2006511961A5 JP 2004565192 A JP2004565192 A JP 2004565192A JP 2004565192 A JP2004565192 A JP 2004565192A JP 2006511961 A5 JP2006511961 A5 JP 2006511961A5
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silicon carbide
region
type silicon
type
forming
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JP2006511961A (ja
JP5371170B2 (ja
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JP2004565192A 2002-12-20 2003-12-04 縦型ｊｆｅｔ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ｊｆｅｔ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法 Expired - Lifetime JP5371170B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43521202P 2002-12-20 2002-12-20
US60/435,212 2002-12-20
US10/698,170 US7221010B2 (en) 2002-12-20 2003-10-30 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US10/698,170 2003-10-30
PCT/US2003/038490 WO2004061974A2 (en) 2002-12-20 2003-12-04 Silicon carbide power mos field effect transistors and manufacturing methods

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JP2013044370A Division JP6095417B2 (ja) 2002-12-20 2013-03-06 縦型ｊｆｅｔ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ｊｆｅｔ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法

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JP2006511961A JP2006511961A (ja) 2006-04-06
JP2006511961A5 true JP2006511961A5 (enExample) 2007-02-01
JP5371170B2 JP5371170B2 (ja) 2013-12-18

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JP2004565192A Expired - Lifetime JP5371170B2 (ja) 2002-12-20 2003-12-04 縦型ｊｆｅｔ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ｊｆｅｔ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法
JP2013044370A Expired - Lifetime JP6095417B2 (ja) 2002-12-20 2013-03-06 縦型ｊｆｅｔ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ｊｆｅｔ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法

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JP2013044370A Expired - Lifetime JP6095417B2 (ja) 2002-12-20 2013-03-06 縦型ｊｆｅｔ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ｊｆｅｔ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法

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US (3) US7221010B2 (enExample)
EP (2) EP1576672B1 (enExample)
JP (2) JP5371170B2 (enExample)
KR (1) KR101020344B1 (enExample)
AU (1) AU2003299587A1 (enExample)
CA (1) CA2502850A1 (enExample)
TW (1) TWI330894B (enExample)
WO (1) WO2004061974A2 (enExample)

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