JP2008522436A5 - - Google Patents

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JP2008522436A5
JP2008522436A5 JP2007544421A JP2007544421A JP2008522436A5 JP 2008522436 A5 JP2008522436 A5 JP 2008522436A5 JP 2007544421 A JP2007544421 A JP 2007544421A JP 2007544421 A JP2007544421 A JP 2007544421A JP 2008522436 A5 JP2008522436 A5 JP 2008522436A5
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type semiconductor
channel
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JP5349799B2 (ja
JP2008522436A (ja
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Priority claimed from US11/000,222 external-priority patent/US7202528B2/en
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JP2007544421A 2004-12-01 2005-11-30 ワイドバンドギャップ半導体における常時オフ集積ｊｆｅｔ電源スイッチおよび作成方法 Expired - Fee Related JP5349799B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/000,222 2004-12-01
US11/000,222 US7202528B2 (en) 2004-12-01 2004-12-01 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
PCT/US2005/042982 WO2006060337A2 (en) 2004-12-01 2005-11-30 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making

Related Child Applications (1)

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JP2012161908A Division JP5647191B2 (ja) 2004-12-01 2012-07-20 ワイドバンドギャップ半導体における常時オフ集積ｊｆｅｔ電源スイッチおよび作成方法

Publications (3)

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JP2008522436A JP2008522436A (ja) 2008-06-26
JP2008522436A5 true JP2008522436A5 (enExample) 2008-12-25
JP5349799B2 JP5349799B2 (ja) 2013-11-20

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JP2007544421A Expired - Fee Related JP5349799B2 (ja) 2004-12-01 2005-11-30 ワイドバンドギャップ半導体における常時オフ集積ｊｆｅｔ電源スイッチおよび作成方法
JP2012161908A Expired - Fee Related JP5647191B2 (ja) 2004-12-01 2012-07-20 ワイドバンドギャップ半導体における常時オフ集積ｊｆｅｔ電源スイッチおよび作成方法

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Country Status (9)

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US (2) US7202528B2 (enExample)
EP (1) EP1829113B1 (enExample)
JP (2) JP5349799B2 (enExample)
KR (2) KR101260082B1 (enExample)
CN (1) CN101124678B (enExample)
AU (1) AU2005312067B2 (enExample)
CA (3) CA2589031A1 (enExample)
NZ (1) NZ555629A (enExample)
WO (1) WO2006060337A2 (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7112860B2 (en) 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7820511B2 (en) * 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7119380B2 (en) * 2004-12-01 2006-10-10 Semisouth Laboratories, Inc. Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US8264003B2 (en) 2006-03-20 2012-09-11 International Rectifier Corporation Merged cascode transistor
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
US20080197422A1 (en) * 2007-02-20 2008-08-21 National Central University Planar combined structure of a bipolar junction transistor and N-type/P-type metal semiconductor field-effect transistors and method for forming the same
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
JP4980126B2 (ja) * 2007-04-20 2012-07-18 株式会社日立製作所 フリーホイールダイオードとを有する回路装置
US7782118B2 (en) * 2007-04-30 2010-08-24 Northrop Grumman Systems Corporation Gate drive for wide bandgap semiconductor device
US7719055B1 (en) * 2007-05-10 2010-05-18 Northrop Grumman Systems Corporation Cascode power switch topologies
US7982239B2 (en) * 2007-06-13 2011-07-19 Northrop Grumman Corporation Power switching transistors
US7763506B2 (en) * 2007-09-10 2010-07-27 Infineon Technologies Austria Ag Method for making an integrated circuit including vertical junction field effect transistors
US8659275B2 (en) * 2008-01-11 2014-02-25 International Rectifier Corporation Highly efficient III-nitride power conversion circuit
US8063616B2 (en) * 2008-01-11 2011-11-22 International Rectifier Corporation Integrated III-nitride power converter circuit
US7965126B2 (en) * 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US8120072B2 (en) * 2008-07-24 2012-02-21 Micron Technology, Inc. JFET devices with increased barrier height and methods of making same
US8232585B2 (en) 2008-07-24 2012-07-31 Micron Technology, Inc. JFET devices with PIN gate stacks
US7772620B2 (en) * 2008-07-25 2010-08-10 Suvolta, Inc. Junction field effect transistor using a silicon on insulator architecture
JP5735429B2 (ja) * 2008-11-05 2015-06-17 パワー・インテグレーションズ・インコーポレーテッド スロープの側壁を有する垂直接合型電界効果トランジスタ、及びその製造方法
US8481372B2 (en) 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same
US8278691B2 (en) 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
DE102009046258B3 (de) * 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
US8130023B2 (en) * 2009-11-23 2012-03-06 Northrop Grumman Systems Corporation System and method for providing symmetric, efficient bi-directional power flow and power conditioning
JP5012886B2 (ja) * 2009-12-25 2012-08-29 株式会社デンソー 半導体装置およびその製造方法
WO2011100304A1 (en) 2010-02-09 2011-08-18 Massachusetts Institute Of Technology Dual-gate normally-off nitride transistors
WO2011149768A2 (en) * 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
CN102315270B (zh) * 2010-07-09 2013-04-24 科轩微电子股份有限公司 具有场效整流元件的功率半导体结构及其制造方法
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
US8896131B2 (en) * 2011-02-03 2014-11-25 Alpha And Omega Semiconductor Incorporated Cascode scheme for improved device switching behavior
US8847408B2 (en) * 2011-03-02 2014-09-30 International Rectifier Corporation III-nitride transistor stacked with FET in a package
US9362905B2 (en) * 2011-03-21 2016-06-07 Infineon Technologies Americas Corp. Composite semiconductor device with turn-on prevention control
US9859882B2 (en) 2011-03-21 2018-01-02 Infineon Technologies Americas Corp. High voltage composite semiconductor device with protection for a low voltage device
US8766375B2 (en) 2011-03-21 2014-07-01 International Rectifier Corporation Composite semiconductor device with active oscillation prevention
US9236376B2 (en) 2011-03-21 2016-01-12 Infineon Technologies Americas Corp. Power semiconductor device with oscillation prevention
WO2012135070A2 (en) * 2011-03-25 2012-10-04 Wavestream Corporation Frequency-desensitizer for broadband predistortion linearizers
CN102194885B (zh) * 2011-05-12 2013-06-26 西安电子科技大学 N型隐埋沟道的碳化硅demosfet器件及制备方法
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP2013153027A (ja) * 2012-01-24 2013-08-08 Fujitsu Ltd 半導体装置及び電源装置
US8933461B2 (en) * 2012-08-09 2015-01-13 Texas Instruments Incorporated III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
JPWO2014034346A1 (ja) * 2012-08-28 2016-08-08 シャープ株式会社 複合型半導体装置
US9064887B2 (en) 2012-09-04 2015-06-23 Infineon Technologies Austria Ag Field-effect semiconductor device and manufacturing method therefor
ITTO20121081A1 (it) * 2012-12-14 2014-06-15 St Microelectronics Srl Componente elettronico di potenza normalmente spento
US20150108958A1 (en) 2012-12-28 2015-04-23 Eaton Corporation Hybrid three-level t-type converter for power applications
JP6113542B2 (ja) * 2013-03-21 2017-04-12 株式会社東芝 半導体装置
JP6201422B2 (ja) * 2013-05-22 2017-09-27 富士電機株式会社 半導体装置
US20140353473A1 (en) * 2013-05-31 2014-12-04 General Electric Company System and method for determination of flames in a harsh environment
JP6223729B2 (ja) * 2013-06-25 2017-11-01 株式会社東芝 半導体装置
JP6211829B2 (ja) * 2013-06-25 2017-10-11 株式会社東芝 半導体装置
US9007117B2 (en) * 2013-08-02 2015-04-14 Infineon Technologies Dresden Gmbh Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor
US9443787B2 (en) * 2013-08-09 2016-09-13 Infineon Technologies Austria Ag Electronic component and method
CN105556669B (zh) * 2013-09-17 2019-06-28 三菱电机株式会社 半导体装置
US9257424B2 (en) 2013-11-08 2016-02-09 Infineon Technologies Austria Ag Semiconductor device
JP6096932B2 (ja) * 2013-11-26 2017-03-15 シャープ株式会社 半導体装置
US9735078B2 (en) 2014-04-16 2017-08-15 Infineon Technologies Ag Device including multiple semiconductor chips and multiple carriers
US9722581B2 (en) 2014-07-24 2017-08-01 Eaton Corporation Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing
US9397657B1 (en) 2014-07-24 2016-07-19 Eaton Corporation Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns
CN104409335B (zh) * 2014-11-18 2017-11-21 中国电子科技集团公司第五十五研究所 一种具有整流的碳化硅jfet栅结构的制备方法
US9768274B2 (en) * 2014-11-25 2017-09-19 Power Integrations, Inc. Laterally-graded doping of materials
US10050620B2 (en) * 2015-02-27 2018-08-14 Renesas Electronics America Inc. Cascode connected SiC-JFET with SiC-SBD and enhancement device
JP6509621B2 (ja) * 2015-04-22 2019-05-08 ルネサスエレクトロニクス株式会社 半導体装置
US9455701B1 (en) * 2015-10-02 2016-09-27 The United States Of America As Represented By The Secretary Of The Navy Apparatus and methods for modulating current / voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures
FI20160183A7 (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano
TWI706566B (zh) * 2016-08-01 2020-10-01 晶元光電股份有限公司 一種高功率半導體元件
US10355132B2 (en) * 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
US11322545B2 (en) 2018-04-27 2022-05-03 Hewlett Packard Enterprise Development Lp Vertical JFET device for memristor array interface
CN109148565A (zh) * 2018-07-25 2019-01-04 深圳大学 一种结型场效应管及其制备方法
US10504995B1 (en) * 2018-08-09 2019-12-10 Semiconductor Components Industries, Llc Short-circuit performance for silicon carbide semiconductor device
WO2020256719A1 (en) 2019-06-19 2020-12-24 Power Integrations, Inc. Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device
US11579645B2 (en) * 2019-06-21 2023-02-14 Wolfspeed, Inc. Device design for short-circuitry protection circuitry within transistors
CN110739349A (zh) * 2019-10-22 2020-01-31 深圳第三代半导体研究院 一种碳化硅横向jfet器件及其制备方法
JP7319614B2 (ja) 2020-01-09 2023-08-02 株式会社東芝 半導体装置
CN113437149B (zh) * 2020-03-23 2023-10-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN111599856B (zh) * 2020-05-27 2022-06-21 南京大学 双沟道增强型准垂直结构GaN基JFET及其制备方法
CN112420694B (zh) * 2020-11-06 2023-06-23 电子科技大学 集成反向肖特基续流二极管的可逆导碳化硅jfet功率器件
TWI818652B (zh) * 2022-07-29 2023-10-11 鴻海精密工業股份有限公司 半導體裝置的製造方法
WO2025046981A1 (ja) * 2023-08-28 2025-03-06 パナソニックホールディングス株式会社 窒化物半導体デバイス
CN117317023B (zh) * 2023-11-23 2024-03-29 北京智芯微电子科技有限公司 抗辐射半导体器件、工艺、电路、芯片及电子设备

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767946A (en) * 1972-07-17 1973-10-23 Western Electric Co Junction field effect transistor device for replacing a pentode
US4107725A (en) * 1974-08-02 1978-08-15 Nippon Gakki Seizo Kabushiki Kaisha Compound field effect transistor
US4663547A (en) * 1981-04-24 1987-05-05 General Electric Company Composite circuit for power semiconductor switching
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
JPS59147467A (ja) * 1983-02-12 1984-08-23 New Japan Radio Co Ltd 静電誘導トランジスタ
JPH03233966A (ja) * 1990-02-08 1991-10-17 Sumitomo Electric Ind Ltd 半導体装置
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US6344663B1 (en) * 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
FR2693314B1 (fr) * 1992-07-02 1994-10-07 Alain Chantre Transistor JFET vertical à mode de fonctionnement bipolaire optimisé et procédé de fabrication correspondant.
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US5406096A (en) * 1993-02-22 1995-04-11 Texas Instruments Incorporated Device and method for high performance high voltage operation
JPH07142731A (ja) * 1993-05-26 1995-06-02 Texas Instr Inc <Ti> パワーデバイスおよびそれを形成するための方法
US5610085A (en) * 1993-11-29 1997-03-11 Texas Instruments Incorporated Method of making a vertical FET using epitaxial overgrowth
KR950015809A (ko) * 1993-11-29 1995-06-17 윌리엄 이. 힐러 에피택셜 과성장 방법 및 디바이스
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5710455A (en) * 1996-07-29 1998-01-20 Motorola Lateral MOSFET with modified field plates and damage areas
JPH10107214A (ja) * 1996-10-01 1998-04-24 Masashi Mukogawa 半導体装置
JP3483716B2 (ja) * 1996-12-09 2004-01-06 三菱電機株式会社 半導体装置
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level
US5945701A (en) * 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6156611A (en) * 1998-07-20 2000-12-05 Motorola, Inc. Method of fabricating vertical FET with sidewall gate electrode
JP4552055B2 (ja) * 1998-10-01 2010-09-29 独立行政法人情報通信研究機構 半導体装置、電子機器、及びこれらの動作方法
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
CA2783659A1 (en) * 1999-12-21 2001-06-28 Sumitomo Electric Industries, Ltd. Horizontal junction field-effect transistor
JP4850993B2 (ja) * 2000-01-25 2012-01-11 古河電気工業株式会社 半導体装置およびその製造方法
JP2001308102A (ja) * 2000-04-19 2001-11-02 Nippon Telegr & Teleph Corp <Ntt> 三端子電子素子
DE10036208B4 (de) * 2000-07-25 2007-04-19 Siced Electronics Development Gmbh & Co. Kg Halbleiteraufbau mit vergrabenem Inselgebiet und Konaktgebiet
JP2002076020A (ja) * 2000-08-31 2002-03-15 Sumitomo Electric Ind Ltd 半導体装置
JP2004513512A (ja) * 2000-10-31 2004-04-30 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電圧供給回路
AU2002246934A1 (en) * 2001-01-03 2002-07-16 Mississippi State University Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US6503782B2 (en) * 2001-03-02 2003-01-07 Mississippi State University Research And Technology Corporation (Rtc) Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
US6855981B2 (en) * 2001-08-29 2005-02-15 Denso Corporation Silicon carbide power device having protective diode
US6841812B2 (en) * 2001-11-09 2005-01-11 United Silicon Carbide, Inc. Double-gated vertical junction field effect power transistor
JP2003209263A (ja) * 2002-01-11 2003-07-25 Sumitomo Electric Ind Ltd 縦型接合型電界効果トランジスタ、及び縦型接合型電界効果トランジスタの製造方法
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7633101B2 (en) * 2006-07-11 2009-12-15 Dsm Solutions, Inc. Oxide isolated metal silicon-gate JFET

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