NZ555629A - Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making - Google Patents

Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making

Info

Publication number
NZ555629A
NZ555629A NZ555629A NZ55562905A NZ555629A NZ 555629 A NZ555629 A NZ 555629A NZ 555629 A NZ555629 A NZ 555629A NZ 55562905 A NZ55562905 A NZ 55562905A NZ 555629 A NZ555629 A NZ 555629A
Authority
NZ
New Zealand
Prior art keywords
layer
region
semiconductor material
type semiconductor
channel
Prior art date
Application number
NZ555629A
Other languages
English (en)
Inventor
Igor Sankin
Joseph N Merrett
Original Assignee
Semisouth Lab Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Lab Inc filed Critical Semisouth Lab Inc
Publication of NZ555629A publication Critical patent/NZ555629A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NZ555629A 2004-12-01 2005-11-30 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making NZ555629A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/000,222 US7202528B2 (en) 2004-12-01 2004-12-01 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
PCT/US2005/042982 WO2006060337A2 (en) 2004-12-01 2005-11-30 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making

Publications (1)

Publication Number Publication Date
NZ555629A true NZ555629A (en) 2011-07-29

Family

ID=36570005

Family Applications (1)

Application Number Title Priority Date Filing Date
NZ555629A NZ555629A (en) 2004-12-01 2005-11-30 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making

Country Status (9)

Country Link
US (2) US7202528B2 (enExample)
EP (1) EP1829113B1 (enExample)
JP (2) JP5349799B2 (enExample)
KR (2) KR101239564B1 (enExample)
CN (1) CN101124678B (enExample)
AU (1) AU2005312067B2 (enExample)
CA (3) CA2793244A1 (enExample)
NZ (1) NZ555629A (enExample)
WO (1) WO2006060337A2 (enExample)

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EP1829113A2 (en) 2007-09-05
CN101124678A (zh) 2008-02-13
US20070243668A1 (en) 2007-10-18
EP1829113B1 (en) 2012-12-26
US7556994B2 (en) 2009-07-07
KR20070091162A (ko) 2007-09-07
KR101239564B1 (ko) 2013-03-05
JP2012212934A (ja) 2012-11-01
US20060113593A1 (en) 2006-06-01
AU2005312067B2 (en) 2012-01-19
JP5349799B2 (ja) 2013-11-20
CA2589031A1 (en) 2006-06-08
CA2793067A1 (en) 2006-06-08
KR20120121930A (ko) 2012-11-06
CN101124678B (zh) 2010-04-14
WO2006060337A2 (en) 2006-06-08
WO2006060337A3 (en) 2006-09-14
KR101260082B1 (ko) 2013-05-02
CA2793244A1 (en) 2006-06-08
JP2008522436A (ja) 2008-06-26
JP5647191B2 (ja) 2014-12-24
US7202528B2 (en) 2007-04-10
AU2005312067A1 (en) 2006-06-08
CA2793067C (en) 2014-04-15
EP1829113A4 (en) 2011-06-15

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