JP2006324517A5 - - Google Patents

Download PDF

Info

Publication number
JP2006324517A5
JP2006324517A5 JP2005147088A JP2005147088A JP2006324517A5 JP 2006324517 A5 JP2006324517 A5 JP 2006324517A5 JP 2005147088 A JP2005147088 A JP 2005147088A JP 2005147088 A JP2005147088 A JP 2005147088A JP 2006324517 A5 JP2006324517 A5 JP 2006324517A5
Authority
JP
Japan
Prior art keywords
conductivity type
layer
region
base region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005147088A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006324517A (ja
JP4948784B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005147088A priority Critical patent/JP4948784B2/ja
Priority claimed from JP2005147088A external-priority patent/JP4948784B2/ja
Priority to PCT/JP2006/302516 priority patent/WO2006123458A1/ja
Priority to US11/908,530 priority patent/US7829898B2/en
Priority to DE112006001280.0T priority patent/DE112006001280B4/de
Publication of JP2006324517A publication Critical patent/JP2006324517A/ja
Publication of JP2006324517A5 publication Critical patent/JP2006324517A5/ja
Application granted granted Critical
Publication of JP4948784B2 publication Critical patent/JP4948784B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2005147088A 2005-05-19 2005-05-19 半導体装置及びその製造方法 Expired - Lifetime JP4948784B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005147088A JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法
PCT/JP2006/302516 WO2006123458A1 (ja) 2005-05-19 2006-02-14 半導体装置及びその製造方法
US11/908,530 US7829898B2 (en) 2005-05-19 2006-02-14 Power semiconductor device having raised channel and manufacturing method thereof
DE112006001280.0T DE112006001280B4 (de) 2005-05-19 2006-02-14 Halbleitervorrichtung und Verfahren zu deren Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005147088A JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006324517A JP2006324517A (ja) 2006-11-30
JP2006324517A5 true JP2006324517A5 (enExample) 2008-06-05
JP4948784B2 JP4948784B2 (ja) 2012-06-06

Family

ID=37431041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005147088A Expired - Lifetime JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US7829898B2 (enExample)
JP (1) JP4948784B2 (enExample)
DE (1) DE112006001280B4 (enExample)
WO (1) WO2006123458A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5560519B2 (ja) * 2006-04-11 2014-07-30 日産自動車株式会社 半導体装置及びその製造方法
WO2010098294A1 (ja) * 2009-02-24 2010-09-02 三菱電機株式会社 炭化珪素半導体装置
EP2482315B1 (en) * 2010-10-29 2015-08-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor element
JP2012253108A (ja) * 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN109585541B (zh) * 2018-12-27 2024-03-26 西安中车永电电气有限公司 一种埋沟式SiC IGBT常关器件及其制备方法
US12272745B2 (en) * 2020-04-14 2025-04-08 National Institute Of Advanced Industrial Science And Technology Semiconductor device
EP4310919A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having a lateral doping gradient and corresponding manufacturing method
EP4310920A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having two lateral doping gradients at different depths and a corresponding manufacturing method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
US6573534B1 (en) * 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
JP3385938B2 (ja) 1997-03-05 2003-03-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP3428459B2 (ja) 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP2000323583A (ja) * 1999-05-13 2000-11-24 Miyazaki Oki Electric Co Ltd 半導体装置
JP2001257347A (ja) * 2000-03-10 2001-09-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4802378B2 (ja) * 2001-03-12 2011-10-26 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4876321B2 (ja) * 2001-03-30 2012-02-15 株式会社デンソー 炭化珪素半導体装置の製造方法
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
JP3580304B2 (ja) * 2002-10-11 2004-10-20 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
JPWO2004036655A1 (ja) * 2002-10-18 2006-03-16 独立行政法人産業技術総合研究所 炭化ケイ素半導体装置及びその製造方法
JP2004146626A (ja) * 2002-10-25 2004-05-20 Toshiba Corp 半導体装置
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP4020196B2 (ja) * 2002-12-25 2007-12-12 三菱電機株式会社 半導体素子の製造方法
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4193596B2 (ja) 2003-06-09 2008-12-10 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2005033030A (ja) 2003-07-07 2005-02-03 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005116896A (ja) * 2003-10-09 2005-04-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2011521446A5 (enExample)
JP2012508455A5 (enExample)
CN102299180B (zh) 包含单元区和具有高击穿电压结构的外围区的半导体器件
JP2009516361A5 (enExample)
JP2006511961A5 (enExample)
US9748393B2 (en) Silicon carbide semiconductor device with a trench
NZ590751A (en) Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
CN103311124A (zh) 半导体器件及其制造方法
WO2011021413A1 (ja) 半導体装置
JP2009164158A5 (enExample)
JP2014078710A (ja) 高電子移動度トランジスタ及びその駆動方法
JP2013514632A5 (enExample)
JP2012104648A5 (enExample)
TW200703646A (en) Trench MOSFET and method of manufacturing the same
CN104919594B (zh) 制造半导体器件的方法
EP1965436A3 (en) Silicon carbide self-aligned epitaxial mosfet and method of manufacturing thereof
JP2019161047A5 (enExample)
TW200614512A (en) Semiconductor device and method for manufacturing the same
JP2012033731A5 (enExample)
WO2014083771A1 (ja) 半導体素子及びその製造方法
CN107123684A (zh) 一种具有宽带隙材料与硅材料复合垂直双扩散金属氧化物半导体场效应管
JP2010267762A5 (enExample)
JP6104743B2 (ja) ショットキーダイオードを内蔵するｆｅｔ
TWI524390B (zh) A wafer structure, and a power element to which it is applied
KR101360070B1 (ko) 반도체 소자 및 그 제조 방법