JP4948784B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4948784B2
JP4948784B2 JP2005147088A JP2005147088A JP4948784B2 JP 4948784 B2 JP4948784 B2 JP 4948784B2 JP 2005147088 A JP2005147088 A JP 2005147088A JP 2005147088 A JP2005147088 A JP 2005147088A JP 4948784 B2 JP4948784 B2 JP 4948784B2
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Japan
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conductivity type
region
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type sic
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JP2005147088A
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English (en)
Japanese (ja)
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JP2006324517A5 (enExample
JP2006324517A (ja
Inventor
健一 大塚
哲也 高見
忠玄 湊
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005147088A priority Critical patent/JP4948784B2/ja
Priority to PCT/JP2006/302516 priority patent/WO2006123458A1/ja
Priority to US11/908,530 priority patent/US7829898B2/en
Priority to DE112006001280.0T priority patent/DE112006001280B4/de
Publication of JP2006324517A publication Critical patent/JP2006324517A/ja
Publication of JP2006324517A5 publication Critical patent/JP2006324517A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005147088A 2005-05-19 2005-05-19 半導体装置及びその製造方法 Expired - Lifetime JP4948784B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005147088A JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法
PCT/JP2006/302516 WO2006123458A1 (ja) 2005-05-19 2006-02-14 半導体装置及びその製造方法
US11/908,530 US7829898B2 (en) 2005-05-19 2006-02-14 Power semiconductor device having raised channel and manufacturing method thereof
DE112006001280.0T DE112006001280B4 (de) 2005-05-19 2006-02-14 Halbleitervorrichtung und Verfahren zu deren Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005147088A JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006324517A JP2006324517A (ja) 2006-11-30
JP2006324517A5 JP2006324517A5 (enExample) 2008-06-05
JP4948784B2 true JP4948784B2 (ja) 2012-06-06

Family

ID=37431041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005147088A Expired - Lifetime JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US7829898B2 (enExample)
JP (1) JP4948784B2 (enExample)
DE (1) DE112006001280B4 (enExample)
WO (1) WO2006123458A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5560519B2 (ja) * 2006-04-11 2014-07-30 日産自動車株式会社 半導体装置及びその製造方法
JP5528424B2 (ja) 2009-02-24 2014-06-25 三菱電機株式会社 炭化珪素半導体装置
WO2012056642A1 (ja) * 2010-10-29 2012-05-03 パナソニック株式会社 半導体素子
JP2012253108A (ja) * 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN109585541B (zh) * 2018-12-27 2024-03-26 西安中车永电电气有限公司 一种埋沟式SiC IGBT常关器件及其制备方法
JP7486729B2 (ja) * 2020-04-14 2024-05-20 国立研究開発法人産業技術総合研究所 半導体装置
EP4310919A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having a lateral doping gradient and corresponding manufacturing method
EP4310920A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having two lateral doping gradients at different depths and a corresponding manufacturing method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
JP3385938B2 (ja) 1997-03-05 2003-03-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP3428459B2 (ja) 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP2000323583A (ja) * 1999-05-13 2000-11-24 Miyazaki Oki Electric Co Ltd 半導体装置
JP2001257347A (ja) * 2000-03-10 2001-09-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4802378B2 (ja) 2001-03-12 2011-10-26 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4876321B2 (ja) * 2001-03-30 2012-02-15 株式会社デンソー 炭化珪素半導体装置の製造方法
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
JP3580304B2 (ja) * 2002-10-11 2004-10-20 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
EP1566843B1 (en) * 2002-10-18 2013-12-18 National Institute of Advanced Industrial Science and Technology Manufacturing method of a silicon carbide semiconductor device
JP2004146626A (ja) * 2002-10-25 2004-05-20 Toshiba Corp 半導体装置
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP4020196B2 (ja) * 2002-12-25 2007-12-12 三菱電機株式会社 半導体素子の製造方法
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4193596B2 (ja) 2003-06-09 2008-12-10 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2005033030A (ja) * 2003-07-07 2005-02-03 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005116896A (ja) * 2003-10-09 2005-04-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE112006001280B4 (de) 2016-08-18
US7829898B2 (en) 2010-11-09
JP2006324517A (ja) 2006-11-30
WO2006123458A1 (ja) 2006-11-23
DE112006001280T5 (de) 2008-03-13
US20090020834A1 (en) 2009-01-22

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