JP4935741B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP4935741B2 JP4935741B2 JP2008095693A JP2008095693A JP4935741B2 JP 4935741 B2 JP4935741 B2 JP 4935741B2 JP 2008095693 A JP2008095693 A JP 2008095693A JP 2008095693 A JP2008095693 A JP 2008095693A JP 4935741 B2 JP4935741 B2 JP 4935741B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 194
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 194
- 238000000034 method Methods 0.000 title claims description 87
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 60
- 238000002513 implantation Methods 0.000 claims description 53
- 238000000137 annealing Methods 0.000 claims description 44
- 150000002500 ions Chemical class 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 68
- 238000002347 injection Methods 0.000 description 48
- 239000007924 injection Substances 0.000 description 48
- 238000005468 ion implantation Methods 0.000 description 42
- 230000004913 activation Effects 0.000 description 34
- 238000005259 measurement Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910034327 TiC Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Description
本実施の形態に係る炭化珪素半導体装置の製造方法によって製造される、炭化珪素p型ベースオーミックコンタクト用p++領域に対する高温プロセスの影響について、以下に詳述する。
本実施の形態に係る炭化珪素半導体装置の製造方法によって製造される、炭化珪素p型ベースオーミックコンタクト用p++領域の電気的特性及びpベースオーミックコンタクト抵抗率について、記載する。
本実施の形態は、実施の形態1及び2に於いて明らかとなった既述の評価結果を反映させた、炭化珪素半導体装置の製造方法に関している。
以上、本発明の実施の形態を詳細に開示し記述したが、以上の記述は本発明の適用可能な局面を例示したものであって、本発明はこれに限定されるものではない。即ち、記述した局面に対する様々な修正や変形例を、この発明の範囲から逸脱することの無い範囲内で考えることが可能である。
Claims (1)
- 炭化珪素層を備える炭化珪素半導体装置の製造方法であって、
前記炭化珪素層の温度を175℃以上、200℃以内の範囲内の値に保持しつつ、前記炭化珪素層の主面から前記炭化珪素層の内部に向けて、その注入濃度が1E19cm-3以上、1E21cm-3以内の範囲内にある、Alイオンを注入して、p型の不純物層を形成する工程と、
前記Alイオンの注入後に、前記炭化珪素層を1600℃以上、2000℃以内の範囲内の温度でアニールする工程と、
その裏面が前記p型の不純物層の表面とオーミックコンタクトする、Niで構成される、コンタクト電極を前記p型の不純物層の前記表面上に形成し、温度950〜1000℃で熱処理し合金化する工程とを備えることを特徴とする、
炭化珪素半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008095693A JP4935741B2 (ja) | 2008-04-02 | 2008-04-02 | 炭化珪素半導体装置の製造方法 |
US12/267,040 US8252672B2 (en) | 2008-04-02 | 2008-11-07 | Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same |
DE102008059984.0A DE102008059984B4 (de) | 2008-04-02 | 2008-12-02 | Verfahren zum Herstellen von einer Siliziumkarbid-Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008095693A JP4935741B2 (ja) | 2008-04-02 | 2008-04-02 | 炭化珪素半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010143030A Division JP2010239152A (ja) | 2010-06-23 | 2010-06-23 | 炭化珪素半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009252811A JP2009252811A (ja) | 2009-10-29 |
JP4935741B2 true JP4935741B2 (ja) | 2012-05-23 |
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JP2008095693A Active JP4935741B2 (ja) | 2008-04-02 | 2008-04-02 | 炭化珪素半導体装置の製造方法 |
Country Status (3)
Country | Link |
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US (1) | US8252672B2 (ja) |
JP (1) | JP4935741B2 (ja) |
DE (1) | DE102008059984B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10700167B2 (en) | 2016-12-07 | 2020-06-30 | Fuji Electric Co., Ltd. | Semiconductor device having an ohmic electrode including a nickel silicide layer |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5452062B2 (ja) * | 2009-04-08 | 2014-03-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5223773B2 (ja) | 2009-05-14 | 2013-06-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5700403B2 (ja) | 2009-11-04 | 2015-04-15 | 有限会社フルイド | Pcr方法及びpcr装置 |
EP2551891B1 (en) | 2010-03-23 | 2021-09-01 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for producing same |
WO2011125274A1 (ja) * | 2010-04-06 | 2011-10-13 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
JP5557584B2 (ja) * | 2010-04-20 | 2014-07-23 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5810522B2 (ja) * | 2010-12-14 | 2015-11-11 | 日産自動車株式会社 | 異種材料接合型ダイオード及びその製造方法 |
JP5568054B2 (ja) * | 2011-05-16 | 2014-08-06 | トヨタ自動車株式会社 | 半導体素子の製造方法 |
JP6042658B2 (ja) * | 2011-09-07 | 2016-12-14 | トヨタ自動車株式会社 | SiC半導体素子の製造方法 |
JP2014154667A (ja) | 2013-02-07 | 2014-08-25 | Sumitomo Electric Ind Ltd | 半導体装置 |
US9768259B2 (en) * | 2013-07-26 | 2017-09-19 | Cree, Inc. | Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling |
JP6665932B2 (ja) | 2016-06-24 | 2020-03-13 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP2018147984A (ja) * | 2017-03-03 | 2018-09-20 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
JP6728097B2 (ja) * | 2017-04-24 | 2020-07-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US11264496B2 (en) * | 2020-04-20 | 2022-03-01 | Polar Semiconductor, Llc | Transistor with buried p-field termination region |
US11329147B2 (en) | 2020-05-12 | 2022-05-10 | Polar Semiconductor, Llc | Insulated gate bipolar transistor with epitaxial layer formed on recombination region |
CN114530370B (zh) * | 2020-11-23 | 2023-11-07 | 瑶芯微电子科技(上海)有限公司 | 一种基于外延沟道的mosfet器件及其制备方法 |
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JP2940699B2 (ja) | 1990-07-30 | 1999-08-25 | 三洋電機株式会社 | p型SiCの電極形成方法 |
SE9501310D0 (sv) * | 1995-04-10 | 1995-04-10 | Abb Research Ltd | A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC |
SE9601174D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having a semiconductor layer of SiC and such a device |
SE9601175D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device by the use of an implanting step and a device produced thereby |
DE19808245C1 (de) * | 1998-02-27 | 1999-06-24 | Daimler Chrysler Ag | Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements |
DE10006378C2 (de) * | 2000-02-12 | 2001-12-06 | Rossendorf Forschzent | Verfahren zur Herstellung Ohmscher Kontakte auf Siliziumkarbid-Halbleiterbereichen |
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JP2003100657A (ja) * | 2001-09-20 | 2003-04-04 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
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2008
- 2008-04-02 JP JP2008095693A patent/JP4935741B2/ja active Active
- 2008-11-07 US US12/267,040 patent/US8252672B2/en active Active
- 2008-12-02 DE DE102008059984.0A patent/DE102008059984B4/de active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10700167B2 (en) | 2016-12-07 | 2020-06-30 | Fuji Electric Co., Ltd. | Semiconductor device having an ohmic electrode including a nickel silicide layer |
Also Published As
Publication number | Publication date |
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JP2009252811A (ja) | 2009-10-29 |
US8252672B2 (en) | 2012-08-28 |
DE102008059984B4 (de) | 2014-01-02 |
US20090250705A1 (en) | 2009-10-08 |
DE102008059984A1 (de) | 2009-10-29 |
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