JPH11289089A5 - - Google Patents

Info

Publication number
JPH11289089A5
JPH11289089A5 JP1999029969A JP2996999A JPH11289089A5 JP H11289089 A5 JPH11289089 A5 JP H11289089A5 JP 1999029969 A JP1999029969 A JP 1999029969A JP 2996999 A JP2996999 A JP 2996999A JP H11289089 A5 JPH11289089 A5 JP H11289089A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
metal electrode
conductivity type
semiconductor device
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999029969A
Other languages
English (en)
Japanese (ja)
Other versions
JP4024954B2 (ja
JPH11289089A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP02996999A priority Critical patent/JP4024954B2/ja
Priority claimed from JP02996999A external-priority patent/JP4024954B2/ja
Publication of JPH11289089A publication Critical patent/JPH11289089A/ja
Publication of JPH11289089A5 publication Critical patent/JPH11289089A5/ja
Application granted granted Critical
Publication of JP4024954B2 publication Critical patent/JP4024954B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP02996999A 1998-02-06 1999-02-08 半導体装置及びその製造方法 Expired - Fee Related JP4024954B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02996999A JP4024954B2 (ja) 1998-02-06 1999-02-08 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-25712 1998-02-06
JP2571298 1998-02-06
JP02996999A JP4024954B2 (ja) 1998-02-06 1999-02-08 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007239588A Division JP2008053739A (ja) 1998-02-06 2007-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JPH11289089A JPH11289089A (ja) 1999-10-19
JPH11289089A5 true JPH11289089A5 (enExample) 2005-10-06
JP4024954B2 JP4024954B2 (ja) 2007-12-19

Family

ID=26363375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02996999A Expired - Fee Related JP4024954B2 (ja) 1998-02-06 1999-02-08 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP4024954B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592649B2 (ja) * 2000-07-11 2010-12-01 株式会社東芝 半導体装置の製造方法
KR100975523B1 (ko) * 2003-12-30 2010-08-13 삼성전자주식회사 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ
JP5091403B2 (ja) * 2005-12-15 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2009090974A1 (ja) * 2008-01-16 2009-07-23 Nec Corporation 半導体装置及びその製造方法
US9817928B2 (en) 2012-08-31 2017-11-14 Synopsys, Inc. Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits
US9190346B2 (en) 2012-08-31 2015-11-17 Synopsys, Inc. Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits
US8847324B2 (en) * 2012-12-17 2014-09-30 Synopsys, Inc. Increasing ION /IOFF ratio in FinFETs and nano-wires
US9379018B2 (en) 2012-12-17 2016-06-28 Synopsys, Inc. Increasing Ion/Ioff ratio in FinFETs and nano-wires

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