JP2009071220A5 - - Google Patents

Download PDF

Info

Publication number
JP2009071220A5
JP2009071220A5 JP2007240639A JP2007240639A JP2009071220A5 JP 2009071220 A5 JP2009071220 A5 JP 2009071220A5 JP 2007240639 A JP2007240639 A JP 2007240639A JP 2007240639 A JP2007240639 A JP 2007240639A JP 2009071220 A5 JP2009071220 A5 JP 2009071220A5
Authority
JP
Japan
Prior art keywords
group iii
iii nitride
nitride compound
compound semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007240639A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009071220A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007240639A priority Critical patent/JP2009071220A/ja
Priority claimed from JP2007240639A external-priority patent/JP2009071220A/ja
Priority to US12/232,320 priority patent/US20090072267A1/en
Priority to CN2008102115377A priority patent/CN101393958B/zh
Publication of JP2009071220A publication Critical patent/JP2009071220A/ja
Publication of JP2009071220A5 publication Critical patent/JP2009071220A5/ja
Withdrawn legal-status Critical Current

Links

JP2007240639A 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子 Withdrawn JP2009071220A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007240639A JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子
US12/232,320 US20090072267A1 (en) 2007-09-18 2008-09-15 Group III nitride-based compound semiconductor light-emitting device
CN2008102115377A CN101393958B (zh) 2007-09-18 2008-09-17 第ⅲ族氮化物基化合物半导体发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007240639A JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2009071220A JP2009071220A (ja) 2009-04-02
JP2009071220A5 true JP2009071220A5 (enExample) 2009-12-24

Family

ID=40453503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007240639A Withdrawn JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子

Country Status (3)

Country Link
US (1) US20090072267A1 (enExample)
JP (1) JP2009071220A (enExample)
CN (1) CN101393958B (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101527869B1 (ko) * 2008-11-18 2015-06-11 삼성전자주식회사 발광 소자의 제조 방법
TWI527261B (zh) 2009-09-11 2016-03-21 晶元光電股份有限公司 發光元件
JP5310534B2 (ja) 2009-12-25 2013-10-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP5423390B2 (ja) * 2009-12-26 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US8455856B1 (en) 2010-04-09 2013-06-04 Stc.Unm Integration of LED driver circuit with LED
CN102169944B (zh) * 2011-04-06 2012-11-07 上海大学 Ag/ITO/氧化锌基复合透明电极的发光二极管及其制备方法
JP5626123B2 (ja) * 2011-05-30 2014-11-19 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
CN102270714B (zh) * 2011-08-24 2013-11-27 上海蓝光科技有限公司 发光二极管芯片的制备方法
CN103243389B (zh) * 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
KR102032437B1 (ko) * 2012-02-28 2019-10-16 루미리즈 홀딩 비.브이. Ac led들을 위한 실리콘 기판들 상에서의 알루미늄 갈륨 나이트라이드/갈륨 나이트라이드 디바이스들을 갖는 갈륨 나이트라이드 led들의 집적
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
TWI642874B (zh) * 2013-09-11 2018-12-01 晶元光電股份有限公司 發光二極體組件以及相關之照明裝置
WO2016074642A1 (en) * 2014-11-14 2016-05-19 The Hong Kong University Of Science And Technology Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors
CN105810707B (zh) * 2014-12-31 2018-07-24 黄智方 高电子迁移率发光晶体管的结构
US9502602B2 (en) * 2014-12-31 2016-11-22 National Tsing Hua University Structure of high electron mobility light emitting transistor
US9871060B2 (en) 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN105206735A (zh) * 2015-10-22 2015-12-30 江苏新广联半导体有限公司 基于碳纳米管作为桥接结构的高压二极管
JP6959919B2 (ja) * 2015-12-04 2021-11-05 クロミス，インコーポレイテッド 加工基板上のワイドバンドギャップデバイス集積回路アーキテクチャ
US10290674B2 (en) * 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
CN105914218B (zh) * 2016-06-03 2019-01-29 华南理工大学 集成放大电路的氮化镓基发光二极管结构及其制备方法
CN105932034B (zh) * 2016-06-23 2019-02-19 厦门乾照光电股份有限公司 增加esd保护的led芯片及其制造方法
JP6668979B2 (ja) * 2016-07-04 2020-03-18 豊田合成株式会社 半導体素子および電気回路
JP2019161172A (ja) * 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN108550683B (zh) * 2018-06-14 2019-10-18 华南理工大学 一种高电子迁移率晶体管与垂直结构发光二极管的单片集成方法
GB201816455D0 (en) * 2018-10-09 2018-11-28 Univ Sheffield LED Arrays
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
KR102806086B1 (ko) * 2019-09-25 2025-05-12 삼성전자주식회사 반도체 장치, 그 제조 방법, 및 이를 포함하는 디스플레이 장치
KR102721080B1 (ko) * 2019-10-08 2024-10-24 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
CN113690266A (zh) * 2021-06-29 2021-11-23 河源市众拓光电科技有限公司 一种hemt与阵列led单片集成芯片及其制备方法
WO2023143955A1 (en) * 2022-01-26 2023-08-03 Ams-Osram International Gmbh Method for producing an array of light emitting elements and display
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828550B2 (ja) * 1988-02-02 1996-03-21 松下電器産業株式会社 光集積回路
JPH09213918A (ja) * 1996-02-01 1997-08-15 Furukawa Electric Co Ltd:The 光電子集積回路素子
DE10054970A1 (de) * 2000-11-06 2002-05-23 Infineon Technologies Ag Verfahren zur Steuerung der Lade- und Entladephasen eines Stützkondensators
CA2456662A1 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
JP3981864B2 (ja) * 2001-11-15 2007-09-26 富士通株式会社 ナイトライド系半導体レーザを備えた光集積装置
US6768146B2 (en) * 2001-11-27 2004-07-27 The Furukawa Electric Co., Ltd. III-V nitride semiconductor device, and protection element and power conversion apparatus using the same
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
JP4579294B2 (ja) * 2004-06-11 2010-11-10 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法
US7288803B2 (en) * 2004-10-01 2007-10-30 International Rectifier Corporation III-nitride power semiconductor device with a current sense electrode
US7535028B2 (en) * 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子

Similar Documents

Publication Publication Date Title
JP2009071220A5 (enExample)
WO2010047553A3 (ko) 반도체 발광 소자
JP6793642B2 (ja) 改善された画素アーキテクチャを含むディスプレイ
EP2372805A2 (en) Organic light emitting diode device
JP2008511100A5 (enExample)
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
CN102576811A (zh) 具有级联oled结构的amoled
EP2180532A3 (en) Semiconductor light emitting device
JP2019514224A5 (enExample)
JP2015508238A (ja) 交流ｌｅｄのためのシリコン基板上における窒化ガリウムｌｅｄの窒化アルミニウムガリウム／窒化ガリウムデバイスとの集積化
WO2008054994A3 (en) Deep ultraviolet light emitting device and method for fabricating same
TW200733781A (en) OLED having stacked organic light-emitting units
JP2010080955A5 (enExample)
TW200506027A (en) Organic electroluminescent device and display
TW200723561A (en) Single chip with multi-LED
WO2010036055A3 (ko) 3족 질화물 반도체 발광소자
TW200629526A (en) Semiconductor device
US20150060784A1 (en) Organic light emitting display and method for manufacturing the same
US8772765B2 (en) Electroluminescent organic transistor
WO2008108456A1 (ja) ＧａＮ系半導体素子
JP2004087763A5 (enExample)
CN101593727B (zh) 制造有机发光显示器的方法及有机发光显示器
US20130062634A1 (en) Solid state light source module and array thereof
TWI487088B (zh) 有機發光二極體光源裝置
US20150009158A1 (en) Active solid-state touch display