JP2009071220A5 - - Google Patents

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Publication number
JP2009071220A5
JP2009071220A5 JP2007240639A JP2007240639A JP2009071220A5 JP 2009071220 A5 JP2009071220 A5 JP 2009071220A5 JP 2007240639 A JP2007240639 A JP 2007240639A JP 2007240639 A JP2007240639 A JP 2007240639A JP 2009071220 A5 JP2009071220 A5 JP 2009071220A5
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JP
Japan
Prior art keywords
group iii
iii nitride
nitride compound
compound semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007240639A
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English (en)
Japanese (ja)
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JP2009071220A (ja
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Publication date
Application filed filed Critical
Priority to JP2007240639A priority Critical patent/JP2009071220A/ja
Priority claimed from JP2007240639A external-priority patent/JP2009071220A/ja
Priority to US12/232,320 priority patent/US20090072267A1/en
Priority to CN2008102115377A priority patent/CN101393958B/zh
Publication of JP2009071220A publication Critical patent/JP2009071220A/ja
Publication of JP2009071220A5 publication Critical patent/JP2009071220A5/ja
Withdrawn legal-status Critical Current

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JP2007240639A 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子 Withdrawn JP2009071220A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007240639A JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子
US12/232,320 US20090072267A1 (en) 2007-09-18 2008-09-15 Group III nitride-based compound semiconductor light-emitting device
CN2008102115377A CN101393958B (zh) 2007-09-18 2008-09-17 第ⅲ族氮化物基化合物半导体发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007240639A JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2009071220A JP2009071220A (ja) 2009-04-02
JP2009071220A5 true JP2009071220A5 (enExample) 2009-12-24

Family

ID=40453503

Family Applications (1)

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JP2007240639A Withdrawn JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子

Country Status (3)

Country Link
US (1) US20090072267A1 (enExample)
JP (1) JP2009071220A (enExample)
CN (1) CN101393958B (enExample)

Families Citing this family (34)

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KR101527869B1 (ko) * 2008-11-18 2015-06-11 삼성전자주식회사 발광 소자의 제조 방법
TWI527261B (zh) 2009-09-11 2016-03-21 晶元光電股份有限公司 發光元件
JP5310534B2 (ja) 2009-12-25 2013-10-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP5423390B2 (ja) * 2009-12-26 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US8455856B1 (en) * 2010-04-09 2013-06-04 Stc.Unm Integration of LED driver circuit with LED
CN102169944B (zh) * 2011-04-06 2012-11-07 上海大学 Ag/ITO/氧化锌基复合透明电极的发光二极管及其制备方法
JP5626123B2 (ja) * 2011-05-30 2014-11-19 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
CN102270714B (zh) * 2011-08-24 2013-11-27 上海蓝光科技有限公司 发光二极管芯片的制备方法
CN103243389B (zh) 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
EP2820678B1 (en) * 2012-02-28 2019-05-08 Lumileds Holding B.V. Integration of gallium nitride leds with aluminum gallium nitride/gallium nitride devices on silicon substrates for ac leds
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
TWI642874B (zh) * 2013-09-11 2018-12-01 晶元光電股份有限公司 發光二極體組件以及相關之照明裝置
US10270436B2 (en) 2014-11-14 2019-04-23 The Hong Kong University Of Science And Technology Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
CN105810707B (zh) * 2014-12-31 2018-07-24 黄智方 高电子迁移率发光晶体管的结构
US9502602B2 (en) * 2014-12-31 2016-11-22 National Tsing Hua University Structure of high electron mobility light emitting transistor
US9871060B2 (en) 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN105206735A (zh) * 2015-10-22 2015-12-30 江苏新广联半导体有限公司 基于碳纳米管作为桥接结构的高压二极管
WO2017096032A1 (en) * 2015-12-04 2017-06-08 Quora Technology, Inc. Wide band gap device integrated circuit architecture on engineered substrate
US10290674B2 (en) * 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
CN105914218B (zh) * 2016-06-03 2019-01-29 华南理工大学 集成放大电路的氮化镓基发光二极管结构及其制备方法
CN105932034B (zh) * 2016-06-23 2019-02-19 厦门乾照光电股份有限公司 增加esd保护的led芯片及其制造方法
JP6668979B2 (ja) * 2016-07-04 2020-03-18 豊田合成株式会社 半導体素子および電気回路
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP2019161172A (ja) * 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
CN108550683B (zh) * 2018-06-14 2019-10-18 华南理工大学 一种高电子迁移率晶体管与垂直结构发光二极管的单片集成方法
GB201816455D0 (en) * 2018-10-09 2018-11-28 Univ Sheffield LED Arrays
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
KR102806086B1 (ko) * 2019-09-25 2025-05-12 삼성전자주식회사 반도체 장치, 그 제조 방법, 및 이를 포함하는 디스플레이 장치
KR102721080B1 (ko) * 2019-10-08 2024-10-24 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
CN113690266A (zh) * 2021-06-29 2021-11-23 河源市众拓光电科技有限公司 一种hemt与阵列led单片集成芯片及其制备方法
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

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JPH0828550B2 (ja) * 1988-02-02 1996-03-21 松下電器産業株式会社 光集積回路
JPH09213918A (ja) * 1996-02-01 1997-08-15 Furukawa Electric Co Ltd:The 光電子集積回路素子
DE10054970A1 (de) * 2000-11-06 2002-05-23 Infineon Technologies Ag Verfahren zur Steuerung der Lade- und Entladephasen eines Stützkondensators
WO2003015174A2 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
JP3981864B2 (ja) * 2001-11-15 2007-09-26 富士通株式会社 ナイトライド系半導体レーザを備えた光集積装置
US6768146B2 (en) * 2001-11-27 2004-07-27 The Furukawa Electric Co., Ltd. III-V nitride semiconductor device, and protection element and power conversion apparatus using the same
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
EP1759408A1 (en) * 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US7288803B2 (en) * 2004-10-01 2007-10-30 International Rectifier Corporation III-nitride power semiconductor device with a current sense electrode
US7535028B2 (en) * 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子

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