CN101393958B - 第ⅲ族氮化物基化合物半导体发光器件 - Google Patents

第ⅲ族氮化物基化合物半导体发光器件 Download PDF

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CN101393958B
CN101393958B CN2008102115377A CN200810211537A CN101393958B CN 101393958 B CN101393958 B CN 101393958B CN 2008102115377 A CN2008102115377 A CN 2008102115377A CN 200810211537 A CN200810211537 A CN 200810211537A CN 101393958 B CN101393958 B CN 101393958B
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node
layer
group iii
based compound
iii nitride
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CN101393958A (zh
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五所野尾浩一
守山实希
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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CN2008102115377A 2007-09-18 2008-09-17 第ⅲ族氮化物基化合物半导体发光器件 Active CN101393958B (zh)

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JP2007240639 2007-09-18
JP2007240639A JP2009071220A (ja) 2007-09-18 2007-09-18 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2007-240639 2007-09-18

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CN101393958B true CN101393958B (zh) 2011-01-26

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JP5423390B2 (ja) * 2009-12-26 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
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CN102169944B (zh) * 2011-04-06 2012-11-07 上海大学 Ag/ITO/氧化锌基复合透明电极的发光二极管及其制备方法
JP5626123B2 (ja) * 2011-05-30 2014-11-19 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
CN102270714B (zh) * 2011-08-24 2013-11-27 上海蓝光科技有限公司 发光二极管芯片的制备方法
CN103243389B (zh) 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
EP2820678B1 (en) * 2012-02-28 2019-05-08 Lumileds Holding B.V. Integration of gallium nitride leds with aluminum gallium nitride/gallium nitride devices on silicon substrates for ac leds
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
TWI642874B (zh) * 2013-09-11 2018-12-01 晶元光電股份有限公司 發光二極體組件以及相關之照明裝置
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US9871060B2 (en) 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN105206735A (zh) * 2015-10-22 2015-12-30 江苏新广联半导体有限公司 基于碳纳米管作为桥接结构的高压二极管
WO2017096032A1 (en) * 2015-12-04 2017-06-08 Quora Technology, Inc. Wide band gap device integrated circuit architecture on engineered substrate
US10290674B2 (en) * 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
CN105914218B (zh) * 2016-06-03 2019-01-29 华南理工大学 集成放大电路的氮化镓基发光二极管结构及其制备方法
CN105932034B (zh) * 2016-06-23 2019-02-19 厦门乾照光电股份有限公司 增加esd保护的led芯片及其制造方法
JP6668979B2 (ja) * 2016-07-04 2020-03-18 豊田合成株式会社 半導体素子および電気回路
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP2019161172A (ja) * 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
CN108550683B (zh) * 2018-06-14 2019-10-18 华南理工大学 一种高电子迁移率晶体管与垂直结构发光二极管的单片集成方法
GB201816455D0 (en) * 2018-10-09 2018-11-28 Univ Sheffield LED Arrays
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
KR102806086B1 (ko) * 2019-09-25 2025-05-12 삼성전자주식회사 반도체 장치, 그 제조 방법, 및 이를 포함하는 디스플레이 장치
KR102721080B1 (ko) * 2019-10-08 2024-10-24 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
CN113690266A (zh) * 2021-06-29 2021-11-23 河源市众拓光电科技有限公司 一种hemt与阵列led单片集成芯片及其制备方法
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JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子

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US20090072267A1 (en) 2009-03-19
CN101393958A (zh) 2009-03-25

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