JP6959919B2 - 加工基板上のワイドバンドギャップデバイス集積回路アーキテクチャ - Google Patents
加工基板上のワイドバンドギャップデバイス集積回路アーキテクチャ Download PDFInfo
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- JP6959919B2 JP6959919B2 JP2018528964A JP2018528964A JP6959919B2 JP 6959919 B2 JP6959919 B2 JP 6959919B2 JP 2018528964 A JP2018528964 A JP 2018528964A JP 2018528964 A JP2018528964 A JP 2018528964A JP 6959919 B2 JP6959919 B2 JP 6959919B2
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- 239000000758 substrate Substances 0.000 title claims description 90
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 182
- 229910002601 GaN Inorganic materials 0.000 claims description 179
- 238000000034 method Methods 0.000 claims description 64
- 239000013590 bulk material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 2
- 230000008961 swelling Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 226
- 230000008569 process Effects 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
[0001]本出願は、2015年12月4日に出願された米国仮特許出願第62/263462号の利益を主張するものであり、その内容はあらゆる目的のためにその全体が参照により本明細書に組み込まれる。
Claims (20)
- 加工基板上にワイドバンドギャップ(WBG)エピタキシャル層を形成するステップであって、前記WBGエピタキシャル層は、複数のエピタキシャル層グループを含み、前記加工基板は、バルク材料上に形成されている加工層を含み、前記バルク材料は、前記WBGエピタキシャル層の熱膨張係数(CTE)と一致するCTEを有する、WBGエピタキシャル層を形成するステップと、
一組の第1のメサと、前記第1のメサ内に形成された第1の内部相互接続と、それぞれが前記第1の内部相互接続に接続される第1の電極セットを形成することにより、前記複数のエピタキシャル層グループのうちの第1のエピタキシャル層グループに基づく第1のWBGデバイスを形成するステップと、
一組の第2のメサと、前記第2のメサ内に形成された第2の内部相互接続と、それぞれが前記第2の内部相互接続に接続される第2の電極セットを形成することにより、前記複数のエピタキシャル層グループのうちの第2のエピタキシャル層グループに基づく第2のWBGデバイスを形成するステップと、
集積回路を形成するために、前記第1の電極セットの少なくとも1つと、前記第2の電極セットの少なくとも1つとの間に1つまたは複数の外部相互接続を形成するステップと
を含む、集積回路を形成する方法。 - 前記加工基板上に形成された前記WBGエピタキシャル層は、少なくとも10ミクロンの厚さを有する、請求項1に記載の方法。
- 少なくとも150ミリメートルの直径を有する前記バルク材料上に前記加工基板を形成するステップをさらに含む、請求項1に記載の方法。
- 前記WBGエピタキシャル層は窒化ガリウム(GaN)エピタキシャル層であり、前記加工基板は、窒化アルミニウム(AlN)ウェハと、酸化物、窒化物またはポリシリコンのうちの少なくとも1つからなる1つまたは複数の外層とを備える、請求項1に記載の方法。
- 前記第2のエピタキシャル層グループは、前記第1のエピタキシャル層グループの上に配置されている、請求項1に記載の方法。
- 前記第2のエピタキシャル層グループの側方部分を通じて前記第1のエピタキシャル層グループまでエッチングするステップをさらに含み、前記外部相互接続は、前記第2のエピタキシャル層グループ上の前記第2の電極セットのうちのいくつかを、前記第1のエピタキシャル層グループ上の前記第1の電極セットのいくつかまで接続する、請求項5に記載の方法。
- 前記第1のWBGデバイスを前記第2のWBGデバイスから横方向に絶縁するために、前記WBGエピタキシャル層を通じて前記第1の電極セットと前記第2の電極セットとの間にメサを垂直にエッチングするステップをさらに含む、請求項5に記載の方法。
- 前記第1のエピタキシャル層グループと前記第2のエピタキシャル層グループとの間に絶縁WBG層を形成するステップをさらに含む、請求項5に記載の方法。
- 前記第1のWBGデバイスが、高電子移動度トランジスタ(HEMT)を構成し、
前記第2のWBGデバイスが、発光ダイオード(LED)を構成し、
前記1つまたは複数の外部相互接続は前記HEMTを前記LEDに接続する、請求項1に記載の方法。 - 前記加工基板上に前記WBGエピタキシャル層を形成するステップは、前記第2のエピタキシャル層グループ内に多重量子井戸(MQW)を形成するステップを含む、請求項9に記載の方法。
- 前記加工基板上に以前に形成されているエピタキシャル層グループの領域をマスキングするステップであって、前記以前に形成されているエピタキシャル層グループのマスクされた前記領域内に後続のエピタキシャル層グループが形成されるのを防止する、マスキングするステップをさらに含む、請求項1に記載の方法。
- 前記複数のエピタキシャル層グループを形成する前に、前記加工基板上にバッファ層を形成するステップをさらに含む、請求項1に記載の方法。
- 窒化ガリウム(GaN)エピタキシャル層の複数のグループであって、前記複数のGaNエピタキシャル層グループを組み合わせた厚さは10ミクロンよりも大きい、複数のGaNエピタキシャル層グループと、
前記複数のGaNエピタキシャル層グループのうちの少なくともいくつかのグループ内にエッチングされているメサと、
前記メサ内に形成されている内部相互接続と、
前記内部相互接続または前記GaNエピタキシャル層の少なくとも一方の上に形成されている電極と、
複数のGaNデバイスを集積回路へと接続するために、前記電極の少なくともいくつかの上に形成された外部相互接続と
を備え、
前記メサ、前記内部相互接続、および前記電極は、前記複数のGaNエピタキシャル層グループのうちの各GaNエピタキシャル層グループを前記複数のGaNデバイスのうちの1つのGaNデバイスへと構成する、デバイス。 - 前記複数のGaNエピタキシャル層グループは、少なくとも150ミリメートルの直径を有する加工基板上に形成される、請求項13に記載のデバイス。
- 前記複数のGaNエピタキシャル層グループの熱膨張係数(CTE)は、前記加工基板のCTEと一致する、請求項14に記載のデバイス。
- 前記複数のGaNエピタキシャル層グループのうちの第1のGaNエピタキシャル層グループがトランジスタを形成し、
前記第1のGaNエピタキシャル層グループの上に位置する、前記複数のGaNエピタキシャル層グループのうちの第2のGaNエピタキシャル層グループが発光ダイオード(LED)を形成し、
前記外部相互接続は、前記トランジスタ上に形成された電極と、前記LED上に形成された電極とを接続する、請求項13に記載のデバイス。 - 前記第2のGaNエピタキシャル層グループは、光を放出する多重量子井戸(MQW)を形成し、
前記第1のGaNエピタキシャル層グループは、前記MQWから放射される前記光に対して実質的に透過性を有する、請求項16に記載のデバイス。 - 窒化ガリウム(GaN)集積回路であって、
第1のGaN層セットと、
前記第1のGaN層セットを第1のGaNデバイスへと構成するための、第1組のメサ、前記メサ内に形成された第1組の内部相互接続、および前記内部相互接続に接続される第1組の第1内部電極と、
前記第1のGaN層セットの上に形成されている第2のGaN層セットと、
前記第2のGaN層セットを第2のGaNデバイスへと構成するための、第2組のメサ、前記メサ内に形成された第2組の内部相互接続、および前記内部相互接続に接続される第2組の第2内部電極と、
前記第1のGaNデバイスを前記第2のGaNデバイスに接続するために、前記第1組の第1内部電極のうちの少なくとも1つおよび前記第2組の第2内部電極の上に形成される第3の外部相互接続セットと
を備える、GaN集積回路。 - 前記第1のGaN層セットおよび前記第2のGaN層セットは、少なくとも10ミクロンの合計された厚さを有する、請求項18に記載のGaN集積回路。
- 前記第1のGaN層セットおよび前記第2のGaN層セットは、少なくとも6インチの直径を有する加工基板上に形成され、前記加工基板の熱膨張係数(CTE)と実質的に一致するCTEを有する、請求項18に記載のGaN集積回路。
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