JP2004087763A5 - - Google Patents

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Publication number
JP2004087763A5
JP2004087763A5 JP2002246368A JP2002246368A JP2004087763A5 JP 2004087763 A5 JP2004087763 A5 JP 2004087763A5 JP 2002246368 A JP2002246368 A JP 2002246368A JP 2002246368 A JP2002246368 A JP 2002246368A JP 2004087763 A5 JP2004087763 A5 JP 2004087763A5
Authority
JP
Japan
Prior art keywords
layer
nitride
semiconductor light
emitting device
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002246368A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004087763A (ja
JP4284946B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002246368A priority Critical patent/JP4284946B2/ja
Priority claimed from JP2002246368A external-priority patent/JP4284946B2/ja
Publication of JP2004087763A publication Critical patent/JP2004087763A/ja
Publication of JP2004087763A5 publication Critical patent/JP2004087763A5/ja
Application granted granted Critical
Publication of JP4284946B2 publication Critical patent/JP4284946B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002246368A 2002-08-27 2002-08-27 窒化物系半導体発光素子 Expired - Lifetime JP4284946B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002246368A JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002246368A JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

Publications (3)

Publication Number Publication Date
JP2004087763A JP2004087763A (ja) 2004-03-18
JP2004087763A5 true JP2004087763A5 (enExample) 2005-10-20
JP4284946B2 JP4284946B2 (ja) 2009-06-24

Family

ID=32054287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002246368A Expired - Lifetime JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

Country Status (1)

Country Link
JP (1) JP4284946B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657963B1 (ko) 2005-06-28 2006-12-14 삼성전자주식회사 고출력 수직외부공진형 표면발광 레이저
KR100753518B1 (ko) 2006-05-23 2007-08-31 엘지전자 주식회사 질화물계 발광 소자
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP2009259953A (ja) * 2008-04-15 2009-11-05 Sharp Corp 窒化物半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP5196160B2 (ja) 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자
JP5868650B2 (ja) * 2011-10-11 2016-02-24 株式会社東芝 半導体発光素子
KR101865405B1 (ko) * 2011-10-13 2018-06-07 엘지이노텍 주식회사 발광소자
KR101983777B1 (ko) * 2012-12-20 2019-05-29 엘지이노텍 주식회사 발광소자
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
JP6225945B2 (ja) * 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
CN114640024A (zh) 2015-06-05 2022-06-17 奥斯坦多科技公司 具有到多个有源层中的选择性载流子注入的发光结构
JP6218791B2 (ja) * 2015-10-28 2017-10-25 シャープ株式会社 窒化物半導体レーザ素子
JP7716389B2 (ja) * 2020-04-06 2025-07-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ装置の製造方法
CN113451460B (zh) * 2020-11-20 2022-07-22 重庆康佳光电技术研究院有限公司 发光器件及其制备方法
CN114825048B (zh) * 2022-04-08 2025-03-14 安徽格恩半导体有限公司 一种半导体激光元件
CN114825049B (zh) * 2022-04-20 2025-03-14 安徽格恩半导体有限公司 一种半导体激光器
WO2025103577A1 (en) * 2023-11-14 2025-05-22 Ams-Osram International Gmbh Light emitting device with multi-layered barrier layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2966982B2 (ja) * 1991-08-30 1999-10-25 株式会社東芝 半導体レーザ
JP3658112B2 (ja) * 1995-11-06 2005-06-08 日亜化学工業株式会社 窒化物半導体レーザダイオード
JPH09139543A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 半導体レーザ素子
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP2002043695A (ja) * 2000-07-26 2002-02-08 Sharp Corp 発光素子
JP2002171028A (ja) * 2000-11-30 2002-06-14 Nichia Chem Ind Ltd レーザ素子
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法

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