ATE464658T1 - Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement - Google Patents

Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement

Info

Publication number
ATE464658T1
ATE464658T1 AT05726372T AT05726372T ATE464658T1 AT E464658 T1 ATE464658 T1 AT E464658T1 AT 05726372 T AT05726372 T AT 05726372T AT 05726372 T AT05726372 T AT 05726372T AT E464658 T1 ATE464658 T1 AT E464658T1
Authority
AT
Austria
Prior art keywords
barrier layer
layer
compound semiconductor
nitride compound
semiconductor light
Prior art date
Application number
AT05726372T
Other languages
English (en)
Inventor
Joongseo Park
Original Assignee
Epivalley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epivalley Co Ltd filed Critical Epivalley Co Ltd
Application granted granted Critical
Publication of ATE464658T1 publication Critical patent/ATE464658T1/de

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/02—Counting; Calculating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • A—HUMAN NECESSITIES
    • A63—SPORTS; GAMES; AMUSEMENTS
    • A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
    • A63F9/00—Games not otherwise provided for
    • A63F9/0098—Word or number games
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/22—Games, e.g. card games
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/0023—Colour matching, recognition, analysis, mixture or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Business, Economics & Management (AREA)
  • Educational Administration (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Educational Technology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Entrepreneurship & Innovation (AREA)
  • Multimedia (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
AT05726372T 2004-02-05 2005-02-05 Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement ATE464658T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040007541A KR100482511B1 (ko) 2004-02-05 2004-02-05 Ⅲ-질화물계 반도체 발광소자
PCT/KR2005/000360 WO2005076374A1 (en) 2004-02-05 2005-02-05 Iii-nitride compound semiconductor light emitting device

Publications (1)

Publication Number Publication Date
ATE464658T1 true ATE464658T1 (de) 2010-04-15

Family

ID=34836691

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05726372T ATE464658T1 (de) 2004-02-05 2005-02-05 Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement

Country Status (6)

Country Link
US (1) US7547909B2 (de)
EP (1) EP1721341B1 (de)
KR (1) KR100482511B1 (de)
AT (1) ATE464658T1 (de)
DE (1) DE602005020586D1 (de)
WO (1) WO2005076374A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723022B1 (ko) * 2006-05-19 2007-05-30 경희대학교 산학협력단 양자 우물 구조를 갖는 나노 구조체 및 그 제조방법
KR101283233B1 (ko) * 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
EP2253025B1 (de) 2008-02-15 2019-04-17 Cree, Inc. Breitbandlichtemittierende lampen für weisslicht
KR20090117538A (ko) 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
KR101123011B1 (ko) * 2008-12-10 2012-03-15 삼성엘이디 주식회사 질화물 반도체 소자
JP4881491B2 (ja) 2009-09-01 2012-02-22 株式会社東芝 半導体発光素子
JP4940317B2 (ja) * 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
KR101125026B1 (ko) * 2010-11-19 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
KR101244583B1 (ko) 2011-05-16 2013-03-25 한국광기술원 톱니 형태의 에너지 밴드갭을 가지는 활성층을 구비한 발광 소자
JP2013008803A (ja) * 2011-06-23 2013-01-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
KR20130012375A (ko) 2011-07-25 2013-02-04 삼성전자주식회사 반도체 발광소자 및 그 제조방법
US8723189B1 (en) * 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
CN102544281A (zh) * 2012-01-20 2012-07-04 厦门市三安光电科技有限公司 具有多层势垒结构的氮化镓基发光二极管
CN103633217B (zh) * 2012-08-27 2018-07-27 晶元光电股份有限公司 发光装置
JP2015038949A (ja) 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102140277B1 (ko) * 2014-04-04 2020-07-31 엘지이노텍 주식회사 발광 소자
KR102212561B1 (ko) 2014-08-11 2021-02-08 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
JP6281469B2 (ja) * 2014-11-03 2018-02-21 豊田合成株式会社 発光素子の製造方法
KR102390624B1 (ko) * 2015-06-05 2022-04-26 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US9640716B2 (en) * 2015-07-28 2017-05-02 Genesis Photonics Inc. Multiple quantum well structure and method for manufacturing the same
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
CN105405947B (zh) * 2015-12-14 2017-12-15 华灿光电股份有限公司 新型发光二极管外延片及其制备方法
FR3050872B1 (fr) 2016-04-27 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comprenant au moins une couche intermediaire de plus grand gap disposee dans au moins une couche barriere de la zone active
KR102600002B1 (ko) 2017-01-11 2023-11-08 삼성전자주식회사 반도체 발광 소자
CN107086258B (zh) * 2017-04-18 2019-05-14 安徽三安光电有限公司 一种多量子阱结构及其发光二极管
JP6955172B2 (ja) 2018-08-31 2021-10-27 日亜化学工業株式会社 窒化物半導体発光素子とその製造方法
JP7328558B2 (ja) * 2020-05-27 2023-08-17 日亜化学工業株式会社 発光素子及び発光素子の製造方法
KR20210146805A (ko) 2020-05-27 2021-12-06 니치아 카가쿠 고교 가부시키가이샤 발광소자 및 발광소자의 제조 방법
KR20230015734A (ko) * 2021-07-23 2023-01-31 주식회사 소프트에피 발광 소자 및 그 제조 방법
CN115566117A (zh) * 2022-09-21 2023-01-03 苏州紫灿科技有限公司 一种具有多量子阱发光层结构的深紫外led及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3604205B2 (ja) 1995-09-18 2004-12-22 日亜化学工業株式会社 窒化物半導体の成長方法
JPH09139543A (ja) 1995-11-15 1997-05-27 Hitachi Ltd 半導体レーザ素子
JP3341576B2 (ja) 1996-03-27 2002-11-05 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JP3311275B2 (ja) * 1997-08-29 2002-08-05 株式会社東芝 窒化物系半導体発光素子
WO1999046822A1 (en) 1998-03-12 1999-09-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
KR100304881B1 (ko) * 1998-10-15 2001-10-12 구자홍 Gan계화합물반도체및그의결정성장방법
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
GB9913950D0 (en) * 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
EP1385241B1 (de) * 2001-03-28 2008-12-31 Nichia Corporation Nitrid-halbleiterelement
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
EP1453160B1 (de) * 2001-11-05 2008-02-27 Nichia Corporation Halbleiterelement
DE10228523B4 (de) 2001-11-14 2017-09-21 Lg Display Co., Ltd. Berührungstablett
JP4507532B2 (ja) * 2002-08-27 2010-07-21 日亜化学工業株式会社 窒化物半導体素子
KR20040047132A (ko) * 2002-11-29 2004-06-05 (주)옵트로닉스 다중 양자우물 구조를 갖는 질화물 반도체 소자
JP4412918B2 (ja) * 2003-05-28 2010-02-10 シャープ株式会社 窒化物半導体発光素子及びその製造方法
JP4754164B2 (ja) * 2003-08-08 2011-08-24 株式会社光波 半導体層
KR100884288B1 (ko) * 2003-10-02 2009-02-18 쇼와 덴코 가부시키가이샤 질화물 반도체, 질화물 반도체를 이용한 발광 소자, 발광다이오드, 레이저 소자 및 램프, 및 그 제조 방법
CN100459189C (zh) * 2003-11-19 2009-02-04 日亚化学工业株式会社 半导体元件

Also Published As

Publication number Publication date
WO2005076374A1 (en) 2005-08-18
DE602005020586D1 (de) 2010-05-27
US20080149917A1 (en) 2008-06-26
EP1721341A1 (de) 2006-11-15
KR100482511B1 (ko) 2005-04-14
EP1721341A4 (de) 2007-10-24
US7547909B2 (en) 2009-06-16
EP1721341B1 (de) 2010-04-14

Similar Documents

Publication Publication Date Title
ATE464658T1 (de) Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement
JP5843238B2 (ja) 窒化物半導体多重量子障壁を有する発光素子及びその製造方法
CN100359707C (zh) 氮化镓系发光器件
CN101165979B (zh) 半导体光电器件
US7058105B2 (en) Semiconductor optoelectronic device
EP1551063A4 (de) Zusammengesetzte galliumnitridhalbleitereinrichtung und herstellungsverfahren
WO2002097904A3 (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice
WO2003041234A1 (en) Semiconductor element
WO2008054994A3 (en) Deep ultraviolet light emitting device and method for fabricating same
EP1536486A4 (de) Zusammengesetztes halbleiterbauelement auf galliumnitridbasis
JP2007036298A5 (de)
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
TW200637091A (en) Semiconductor light-emitting device
JP2008508720A5 (de)
MY129574A (en) Group iii nitride led with undoped cladding layer and multiple quantum well
WO2002037579A3 (en) Group iii nitride light emitting devices with gallium-free layers
WO2011021264A1 (ja) 窒化物半導体発光素子
JP2010541217A5 (de)
US9812608B2 (en) Deep ultraviolet light-emitting diode chip and package structure containing the same
CN105895759A (zh) 一种duv led外延片结构
JP2001168384A5 (de)
JP2012069982A (ja) 窒化物半導体発光素子
JP2003218458A5 (de)
WO2008153065A1 (ja) 半導体発光素子及びその製造方法
JP2006210692A5 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties