ATE464658T1 - Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement - Google Patents

Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement

Info

Publication number
ATE464658T1
ATE464658T1 AT05726372T AT05726372T ATE464658T1 AT E464658 T1 ATE464658 T1 AT E464658T1 AT 05726372 T AT05726372 T AT 05726372T AT 05726372 T AT05726372 T AT 05726372T AT E464658 T1 ATE464658 T1 AT E464658T1
Authority
AT
Austria
Prior art keywords
barrier layer
layer
compound semiconductor
nitride compound
semiconductor light
Prior art date
Application number
AT05726372T
Other languages
English (en)
Inventor
Joongseo Park
Original Assignee
Epivalley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epivalley Co Ltd filed Critical Epivalley Co Ltd
Application granted granted Critical
Publication of ATE464658T1 publication Critical patent/ATE464658T1/de

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/02—Counting; Calculating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • A—HUMAN NECESSITIES
    • A63—SPORTS; GAMES; AMUSEMENTS
    • A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
    • A63F9/00—Games not otherwise provided for
    • A63F9/0098—Word or number games
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/22—Games, e.g. card games
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B19/00—Teaching not covered by other main groups of this subclass
    • G09B19/0023—Colour matching, recognition, analysis, mixture or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Business, Economics & Management (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Entrepreneurship & Innovation (AREA)
  • Educational Technology (AREA)
  • Educational Administration (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Multimedia (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
AT05726372T 2004-02-05 2005-02-05 Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement ATE464658T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040007541A KR100482511B1 (ko) 2004-02-05 2004-02-05 Ⅲ-질화물계 반도체 발광소자
PCT/KR2005/000360 WO2005076374A1 (en) 2004-02-05 2005-02-05 Iii-nitride compound semiconductor light emitting device

Publications (1)

Publication Number Publication Date
ATE464658T1 true ATE464658T1 (de) 2010-04-15

Family

ID=34836691

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05726372T ATE464658T1 (de) 2004-02-05 2005-02-05 Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement

Country Status (6)

Country Link
US (1) US7547909B2 (de)
EP (1) EP1721341B1 (de)
KR (1) KR100482511B1 (de)
AT (1) ATE464658T1 (de)
DE (1) DE602005020586D1 (de)
WO (1) WO2005076374A1 (de)

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KR101283233B1 (ko) * 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
JP5389054B2 (ja) 2008-02-15 2014-01-15 クリー インコーポレイテッド 白色光出力を生成する広帯域発光デバイス・ランプ
KR20090117538A (ko) 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
KR101123011B1 (ko) * 2008-12-10 2012-03-15 삼성엘이디 주식회사 질화물 반도체 소자
WO2011027417A1 (ja) 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子
JP4940317B2 (ja) 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
KR101125026B1 (ko) * 2010-11-19 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
KR101244583B1 (ko) 2011-05-16 2013-03-25 한국광기술원 톱니 형태의 에너지 밴드갭을 가지는 활성층을 구비한 발광 소자
JP2013008803A (ja) * 2011-06-23 2013-01-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
KR20130012375A (ko) 2011-07-25 2013-02-04 삼성전자주식회사 반도체 발광소자 및 그 제조방법
US8723189B1 (en) * 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
CN102544281A (zh) * 2012-01-20 2012-07-04 厦门市三安光电科技有限公司 具有多层势垒结构的氮化镓基发光二极管
CN103633217B (zh) * 2012-08-27 2018-07-27 晶元光电股份有限公司 发光装置
JP2015038949A (ja) * 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102140277B1 (ko) * 2014-04-04 2020-07-31 엘지이노텍 주식회사 발광 소자
KR102212561B1 (ko) 2014-08-11 2021-02-08 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
JP6281469B2 (ja) * 2014-11-03 2018-02-21 豊田合成株式会社 発光素子の製造方法
KR20220058643A (ko) * 2015-06-05 2022-05-09 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US9640716B2 (en) * 2015-07-28 2017-05-02 Genesis Photonics Inc. Multiple quantum well structure and method for manufacturing the same
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
CN105405947B (zh) * 2015-12-14 2017-12-15 华灿光电股份有限公司 新型发光二极管外延片及其制备方法
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KR102600002B1 (ko) 2017-01-11 2023-11-08 삼성전자주식회사 반도체 발광 소자
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Also Published As

Publication number Publication date
US7547909B2 (en) 2009-06-16
KR100482511B1 (ko) 2005-04-14
EP1721341A1 (de) 2006-11-15
US20080149917A1 (en) 2008-06-26
DE602005020586D1 (de) 2010-05-27
EP1721341B1 (de) 2010-04-14
WO2005076374A1 (en) 2005-08-18
EP1721341A4 (de) 2007-10-24

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