JP2006210692A5 - - Google Patents
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- Publication number
- JP2006210692A5 JP2006210692A5 JP2005021445A JP2005021445A JP2006210692A5 JP 2006210692 A5 JP2006210692 A5 JP 2006210692A5 JP 2005021445 A JP2005021445 A JP 2005021445A JP 2005021445 A JP2005021445 A JP 2005021445A JP 2006210692 A5 JP2006210692 A5 JP 2006210692A5
- Authority
- JP
- Japan
- Prior art keywords
- well layer
- layer
- formed above
- semiconductor light
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- -1 nitride compound Chemical class 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 2
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005021445A JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
KR1020050126528A KR100752007B1 (ko) | 2005-01-28 | 2005-12-21 | 3족 질화물계 화합물 반도체 발광 소자 및 그 제조 방법 |
TW094146488A TWI284994B (en) | 2005-01-28 | 2005-12-26 | Group III nitride-based compound semiconductor light-emitting device and method for producing the same |
CNB2006100027584A CN100403566C (zh) | 2005-01-28 | 2006-01-25 | Ⅲ族氮化物系化合物半导体发光元件及其制造方法 |
US11/340,746 US7629619B2 (en) | 2005-01-28 | 2006-01-27 | Group III nitride-based compound semiconductor light-emitting device and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005021445A JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006210692A JP2006210692A (ja) | 2006-08-10 |
JP2006210692A5 true JP2006210692A5 (de) | 2007-09-27 |
Family
ID=36919092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005021445A Withdrawn JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2006210692A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010021290A (ja) | 2008-07-09 | 2010-01-28 | Sumitomo Electric Ind Ltd | 量子井戸構造の製造方法 |
JP5572976B2 (ja) | 2009-03-26 | 2014-08-20 | サンケン電気株式会社 | 半導体装置 |
DE102009037416B4 (de) * | 2009-08-13 | 2021-10-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektrisch gepumpter optoelektronischer Halbleiterchip |
JP2011151422A (ja) * | 2009-12-10 | 2011-08-04 | Dowa Electronics Materials Co Ltd | p型AlGaN層およびIII族窒化物半導体発光素子 |
DE102016116425A1 (de) | 2016-09-02 | 2018-03-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP7405554B2 (ja) * | 2019-10-01 | 2023-12-26 | 旭化成株式会社 | 紫外線発光素子 |
JP7318603B2 (ja) | 2020-07-09 | 2023-08-01 | 豊田合成株式会社 | Iii族窒化物半導体素子の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3304782B2 (ja) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子 |
JPH1126812A (ja) * | 1997-07-01 | 1999-01-29 | Toyoda Gosei Co Ltd | 3族窒化物半導体素子及びその製造方法 |
GB2327145A (en) * | 1997-07-10 | 1999-01-13 | Sharp Kk | Graded layers in an optoelectronic semiconductor device |
-
2005
- 2005-01-28 JP JP2005021445A patent/JP2006210692A/ja not_active Withdrawn
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