CN101165979B - 半导体光电器件 - Google Patents

半导体光电器件 Download PDF

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CN101165979B
CN101165979B CN2007100961719A CN200710096171A CN101165979B CN 101165979 B CN101165979 B CN 101165979B CN 2007100961719 A CN2007100961719 A CN 2007100961719A CN 200710096171 A CN200710096171 A CN 200710096171A CN 101165979 B CN101165979 B CN 101165979B
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CN101165979A (zh
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孙重坤
柳汉烈
司空坦
白好善
李成男
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Samsung Electronics Co Ltd
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Abstract

本发明提供一种半导体光电器件，包括：有源层，包括量子阱和势垒层；上和下波导层，分别形成在所述有源层之上和之下；上和下包层，分别形成在所述上和下波导层之上和之下；衬底，支承所得堆叠结构；上光学约束层OCL，设置在所述有源层与所述上和下波导层之间且具有小于所述上波导层的能隙且等于或大于所述势垒层的能隙的能隙；以及下OCL，具有小于所述下波导层的能隙且等于或小于所述势垒层的能隙的能隙。

Description

半导体光电器件
技术领域
本发明涉及半导体光电器件，尤其涉及具有高光学效率的半导体光电器件。
背景技术
美国专利No.7058105公开了一种半导体激光器件，其是一种氮化物基化合物半导体光电器件。这样的氮化物基发光器件使用蓝宝石(sapphire)作为用于形成衬底的材料。通常，波导层由GaN形成从而导引形成在氮化物基激光二极管的有源层中的光。另外，包层由AlxGa1-xN形成从而限制光和电子。AlxGa1-xN具有比GaN更大的能隙并且比作为波导的GaN更大的与作为有源层的InGaN不同的折射率。用作包层的AlGaN层具有比波导层和用作n型接触层的GaN更高的晶格参数和热膨胀系数。因此，形成裂缝。结果，AlxGa1-xN的Al成分比和厚度受到限制。根据近来的研究结果，AlGaN/GaN超晶格的Al成分比限制到约14％，且Al的厚度限制到1μm。块AlGaN的Al成分比限制到8％，且Al的厚度约束到1μm。光学约束效果(optical confinement effect)的改善受到包层的受限厚度和Al的受限比率的限制。换言之，光学约束因子(optical confinement factor，OCF)会减小，阈值电流会增大。因此，难以改善半导体光电器件的内部量子效率和光功率。
发明内容
本发明提供一种半导体光电器件，其能够有效地提高光学约束因子(OCF)并减少内部损耗从而改善内部量子效率和可靠性。
本发明还提供一种高效率半导体光电器件，其能够增大光学增益从而减小激光器的阈值电流以减小操作输入功率。
根据本发明的一个方面，提供一种半导体光电器件，包括：有源层，包括量子阱和势垒层；上和下波导层，分别形成在所述有源层之上和之下；上和下包层，分别形成在所述上和下波导层之上和之下；衬底，支承所得堆叠结构；上OCL(光学约束层)，设置在所述有源层与所述上和下波导层之间且具有比所述上波导层的能隙小且等于或大于所述势垒层的能隙的能隙；以及下OCL，具有比所述下波导层的能隙小且等于或小于所述势垒层的能隙的能隙。
附图说明
通过参照附图详细描述其示例性实施例，本发明的上述和其它特征及优点将变得更加明显，附图中：
图1是根据本发明一实施例具有堆叠结构的半导体激光器件的剖视图；
图2是曲线图，示出图1所示的半导体激光器件的每个晶体层的能隙；
图3是曲线图，示出光学约束因子(OCF)关于下光学约束层(OCL)的1.5％、3％和4％的In成分比增加而发生的变化；
图4是曲线图，示出内部损耗关于下OCL的1.5％、3％和4％的In成分比增加而发生的变化；
图5是曲线图，示出增益阈值关于下OCL的1.5％、3％和4％的In成分比增加而发生的变化；
图6是曲线图，示出当下OCL的In成分比分别为1.5％和4％时峰值波长关于激励功率变化的变化和差别。
具体实施方式
根据本发明的半导体光电器件增大了具有最大Al成分的包层结构中的光学约束因子(OCF)并减少了内部损耗，且在包层中不形成裂缝。因此，该半导体光电器件包括上和下光学约束层(OCL)，其具有介于有源层与上和下波导层之间的能隙值从而提高了光学增益。另外，该半导体光电器件具有包括上和下OCL的结构。上OCL具有小于上波导层且等于或大于势垒层(burrier layer)的能隙。下OCL具有小于下波导层且等于或小于势垒层的能隙。具有上述结构的半导体光电器件增加了内部量子效率且减小了阈值电流和操作输入功率。这将在后面描述。阈值电流和操作输入功率的减小有助于增加振荡效率(oscillation efficiency)并延长半导体光电器件的寿命。另外，增大了In的掺入比，减小了量子阱应变(strain)。因此，可以振荡具有减小的蓝偏移的长波长激光。
此外，减小了量子阱应变产生的压电场效应。因此，当半导体激光具有450nm或更大的长波长时，相对于激励功率而言蓝偏移小。结果，可以获得长波长半导体激光器件。
本发明的半导体光电器件可以是氮化物基光电器件，其可以用作光发射和接收器件。
图1是根据本发明一实施例具有堆叠结构的半导体激光器件的剖视图，图2是曲线图，示出图1所示的半导体激光器件的每个晶体层的能隙。
参照图1，掺杂以Si的GaN接触层20形成在由Si、SiC、GaN或蓝宝石形成的衬底10上。作为主元件的包括InGaN有源层50的电致发光层形成在GaN接触层20上。
InGaN有源层50包括由AlvInxGa1-x-vN(0≤v、x≤1，0≤x+v≤1)形成的量子阱54和由AlwInyGa1-y-wN(0≤w、y≤1，0≤y+w≤1)形成的势垒层52和56。在InGaN有源层50中，量子阱54的In成分比等于或高于势垒层52和56的In成分比。量子阱54的Al成分比等于或低于势垒层52和56的Al成分比。InGaN有源层50可包括多量子阱或单量子阱。
下和上OCL 45和58分别非对称地形成在InGaN有源层50之上和之下。例如，上OCL 58可由掺杂以p型掺杂剂或不掺杂的Alx1Iny1Ga1-x1-y1N(0≤x1、y1≤1，0≤x1+y1≤1)形成，且下OCL 45可由掺杂以n型掺杂剂或不掺杂的Alx2Iny2Ga1-x2-y2N(0≤x2、y2≤1，0≤x2+y2≤1)形成。至于上和下OCL 58和45的能隙，下OCL 45的In成分比大于上OCL 58的In成分比，如图2所示，即y1＜y2。具体地，上OCL 58具有比上波导层70的能隙小且比势垒层52和56的能隙大的能隙。下OCL 45具有比下波导层40的能隙小且等于或小于势垒层52和56的能隙的能隙。
根据本发明的另一方面，最接近OCL 45的InGaN有源层50的势垒层52的能隙可小于另一势垒层56的能隙。另外，下OCL 45的能隙可等于势垒层52的能隙。
本发明的半导体光电器件还可以包括在下OCL 45和下波导层40之间的缓冲层(未示出)。缓冲层的能隙可具有介于下OCL 45的能隙和下波导层40的能隙之间范围内的值。
本发明的半导体光电器件的上和下OCL 58和45可掺杂以Si或Mg。上和下OCL 58和45每个可具有
Figure G200710096171920070427D000031
和
Figure G200710096171920070427D000032
之间的厚度。
图1的上和下波导层70和40分别由p-GaN和n-GaN形成。供选地，上和下波导层70和40可分别由p-AlzGa1-zN(0≤z≤0.5)和n-AlzGa1-zN(0≤z≤0.5)形成。上和下波导层70和40具有比上和下OCL 58和45大的能隙。另外，包层30和接触层20顺序形成在下波导层40之下。这里，包层30由n-AlGaN/n-GaN、n-AlGaN/GaN、AlGaN/n-GaN、或n-AlGaN形成，接触层20由n-GaN形成。上和下波导层70和40的Al成分比必须低于上和下包层80和30的Al成分比。
包封势垒层(EBL)60置于上OCL 58和上波导层70之间。EBL 60由p-AlGaN形成。如图2所示，EBL 60与其它晶体层相比具有最大的能隙。因此，EBL 60防止电子溢出但仅允许空穴通过。
上包层80和上接触层90顺序形成在上波导层70上。上包层80由p-AlGaN/p-GaN、p-AlGaN/GaN、AlGaN/p-GaN、或p-AlGaN形成，且上接触层90由p-GaN形成。
根据本发明，其中上和下OCL 58和45设置在有源层两侧，尽管AlGaN包层的Al成分比和厚度受到限制，但OCF增大，且内部损耗减小。因此，增益阈值最小化。结果，半导体光电器件的阈值电流和内部量子效率得到改善。
根据本发明，可以使用包括上和下波导层以及上和下OCL 58和45的结构，其中上和下OCL 58和45具有比上和下波导层的能隙窄的上和下能隙且彼此不对称。因此，可以改善双光学约束效果和有源层50的量子阱54的In掺入比。另外，量子阱稍微应变从而减小制造具有450nm或更大的长波长振荡器件时的蓝偏移。因此，可以制造长波长激光器。
图3是曲线图，示出OCF关于下OCL 45的1.5％、3％、4％的In成分比增加而发生的变化。上OCL 58的In成分比固定为1.5％。如图3所示，随着下OCL 45的In成分比从1.5％增加到3％和4％，OCF增大。换言之，当上和下OCL 58和45的In成分比不同，即它们的能隙彼此不对称时，OCF较大地增加。对于每种In成分比，OCF随着下OCL 45的厚度变化而变化。当In成分为4％时，OCF变化最大。这是因为，由于下OCL 45的In的增加，光模(optical mode)的最大值变得更接近于量子阱QW的中心。
图4是曲线图，示出内部损耗ai关于下OCL 45的1.5％、3％、4％的In成分比增加而发生的变化。上OCL 58的In成分比固定到1.5％。如图4所示，随着下OCL 45的In成分比从1.5％增加到3％和4％，内部损耗减小。换言之，当上和下OCL 58和45的In成分比不同，即上和下OCL 58和45的能隙彼此不对称时，内部损耗进一步减小。这解释为这样的现象，其中光模朝p-GaN层的倾斜减小，因此发生在p-GaN层中的内部损耗减少。
图5是曲线图，示出了增益阈值关于下OCL 45的1.5％、3％、4％的In成分比增加而发生的变化。增益阈值小时，半导体光电器件的振荡特性得到改善，其中增益阈值定义为光学损耗除以OCF得到的值。当下OCL 45的In成分从1.5％增加到3％和4％使得上和下OCL 58和45彼此不对称时，增益阈值显著降低。
根据上述结果，上和下OCL 58和45每个的厚度可在
Figure G200710096171920070427D000051
和
Figure G200710096171920070427D000052
的范围内调节。具体地，上和下OCL 58和45的每个可具有
Figure G200710096171920070427D000053
和
Figure G200710096171920070427D000054
之间的厚度。
图6是曲线图，示出当下OCL 45的In成分比分别为1.5％和4％时峰值波长关于激励功率变化的变化和差别。当下OCL 45的In成分比是4％时，与In成分比为1.5％时相比得到了更长波长的光学特性。另外，当下OCL 45的In成分比是4％时，激励功率增大。因此，In成分比为4％时发生的蓝偏移(Δλ＝4.3nm)比In成分比为1.5％时发生的蓝偏移(Δλ＝8.1nm)小50％。
如上所述，根据本发明的半导体光电器件包括上和下波导层以及上和下OCL。上和下OCL可具有比上和下波导层的能隙窄的能隙且彼此不对称。因此，可以改善双光学约束效果和有源层的量子阱的In掺入比。另外，量子阱应变产生的压电场效应可以减小。因此，可以得到具有450nm或更大的长波长且具有小的关于激励功率的蓝偏移的长波长半导体激光器。根据本发明的半导体光电器件可应用于氮化物基光发射和接收器件。换言之，本发明的半导体光电器件可应用于作为氮化物基发光器件的白、蓝和绿LED，紫外、蓝紫、蓝和绿LD，光接收器件，电子器件等。
尽管本发明参照其示例实施例进行了特定示出和描述，本领域技术人员能够理解，在不脱离本发明的权利要求所定义的精神和范围的情况下可以进行形式和细节上的各种改变。

Claims (15)

1.一种半导体光电器件，包括：
有源层，包括至少一个量子阱和至少一个势垒层；
上和下波导层，分别形成在所述有源层之上和之下；
上和下包层，分别形成在所述上和下波导层之上和之下；
衬底，支承所得堆叠结构；
上光学约束层OCL，设置在所述有源层与所述上波导层之间且具有比所述上波导层的能隙小且等于或大于所述至少一个势垒层的能隙的能隙；以及
下OCL，设置在所述有源层与所述下波导层之间且具有比所述下波导层的能隙小且等于或小于所述至少一个势垒层的能隙的能隙。
2.如权利要求1的半导体光电器件，其中电子阻挡层置于所述上波导层和形成在所述上波导层之下的上OCL之间。
3.如权利要求1的半导体光电器件，其中所述衬底由Si、蓝宝石、SiC和GaN之一形成。
4.如权利要求1的半导体光电器件，其中所述上和下波导层分别由p-AlzGa1-zN和n-AlzGa1-zN形成，其中0≤z≤0.5，所述上和下包层分别由p-AlGaN/p-GaN和n-AlGaN/n-GaN、或p-AlGaN和n-AlGaN形成，所述至少一个量子阱由AlvInxGa1-x-vN形成，其中0≤v、x≤1和0≤x+v≤1，且所述至少一个势垒层由AlwInyGa1-y-wN形成，其中0≤w、y≤1、0≤y+w≤1和y≤x、v≤w。
5.如权利要求1的半导体光电器件，其中所述上OCL由Alx1Iny1Ga1-x1-y1N形成，其中0≤x1、y1≤1和0≤x1+y1≤1，所述下OCL由Alx2Iny2Ga1-x2-y2N形成，其中0≤x2、y2≤1和0≤x2+y2≤1，且所述下OCL的In成分比大于所述上OCL的In成分比。
6.如权利要求1的半导体光电器件，其中所述有源层包括多量子阱层。
7.如权利要求6的半导体光电器件，其中所述有源层包括多个势垒层，最接近所述下OCL的势垒层的能隙小于其它势垒层的能隙，且所述下OCL的能隙等于最接近所述下OCL的势垒层的能隙。
8.如权利要求1的半导体光电器件，还包括置于所述下OCL和所述下波导层之间的缓冲层，其中所述缓冲层的能隙具有所述下OCL和所述下波导层的所述能隙之间范围内的值。
9.如权利要求7的半导体光电器件，还包括置于所述下OCL和所述下波导层之间的缓冲层，其中所述缓冲层的能隙具有所述下OCL和所述下波导层的所述能隙之间范围内的值。
10.如权利要求1的半导体光电器件，其中所述上和下OCL被掺杂以Si和Mg之一。
11.如权利要求7的半导体光电器件，其中所述上和下OCL被掺杂以Si和Mg之一。
12.如权利要求1的半导体光电器件，其中所述上和下OCL的每个具有100
Figure FSB00000108287800021
和2000之间的厚度。
13.如权利要求7的半导体光电器件，其中所述上和下OCL的每个具有100
Figure FSB00000108287800023
和2000
Figure FSB00000108287800024
之间的厚度。
14.如权利要求1的半导体光电器件，其中所述上和下OCL的每个具有200
Figure FSB00000108287800025
和1200
Figure FSB00000108287800026
之间的厚度。
15.如权利要求1的半导体光电器件，其中所述上和下OCL的厚度彼此不同。
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