JP4284946B2 - 窒化物系半導体発光素子 - Google Patents

窒化物系半導体発光素子 Download PDF

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Publication number
JP4284946B2
JP4284946B2 JP2002246368A JP2002246368A JP4284946B2 JP 4284946 B2 JP4284946 B2 JP 4284946B2 JP 2002246368 A JP2002246368 A JP 2002246368A JP 2002246368 A JP2002246368 A JP 2002246368A JP 4284946 B2 JP4284946 B2 JP 4284946B2
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JP
Japan
Prior art keywords
layer
nitride
well
light guide
based semiconductor
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Expired - Lifetime
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JP2002246368A
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Japanese (ja)
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JP2004087763A (ja
JP2004087763A5 (enExample
Inventor
恭司 山口
中島　　博
庸紀 朝妻
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Sony Corp
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Sony Corp
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Priority to JP2002246368A priority Critical patent/JP4284946B2/ja
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Publication of JP2004087763A5 publication Critical patent/JP2004087763A5/ja
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JP2002246368A 2002-08-27 2002-08-27 窒化物系半導体発光素子 Expired - Lifetime JP4284946B2 (ja)

Priority Applications (1)

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JP2002246368A JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

Applications Claiming Priority (1)

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JP2002246368A JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

Publications (3)

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JP2004087763A JP2004087763A (ja) 2004-03-18
JP2004087763A5 JP2004087763A5 (enExample) 2005-10-20
JP4284946B2 true JP4284946B2 (ja) 2009-06-24

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JP2002246368A Expired - Lifetime JP4284946B2 (ja) 2002-08-27 2002-08-27 窒化物系半導体発光素子

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657963B1 (ko) 2005-06-28 2006-12-14 삼성전자주식회사 고출력 수직외부공진형 표면발광 레이저
KR100753518B1 (ko) 2006-05-23 2007-08-31 엘지전자 주식회사 질화물계 발광 소자
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP2009259953A (ja) * 2008-04-15 2009-11-05 Sharp Corp 窒化物半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP5196160B2 (ja) 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자
JP5868650B2 (ja) * 2011-10-11 2016-02-24 株式会社東芝 半導体発光素子
KR101865405B1 (ko) * 2011-10-13 2018-06-07 엘지이노텍 주식회사 발광소자
KR101983777B1 (ko) * 2012-12-20 2019-05-29 엘지이노텍 주식회사 발광소자
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
JP6225945B2 (ja) 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
US20160359086A1 (en) * 2015-06-05 2016-12-08 Ostendo Technologies, Inc. Light Emitting Structures with Multiple Uniformly Populated Active Layers
JP6218791B2 (ja) * 2015-10-28 2017-10-25 シャープ株式会社 窒化物半導体レーザ素子
WO2021206012A1 (ja) * 2020-04-06 2021-10-14 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ装置の製造方法
CN113451460B (zh) * 2020-11-20 2022-07-22 重庆康佳光电技术研究院有限公司 发光器件及其制备方法
CN114825048B (zh) * 2022-04-08 2025-03-14 安徽格恩半导体有限公司 一种半导体激光元件
CN114825049B (zh) * 2022-04-20 2025-03-14 安徽格恩半导体有限公司 一种半导体激光器
WO2025103577A1 (en) * 2023-11-14 2025-05-22 Ams-Osram International Gmbh Light emitting device with multi-layered barrier layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2966982B2 (ja) * 1991-08-30 1999-10-25 株式会社東芝 半導体レーザ
JP3658112B2 (ja) * 1995-11-06 2005-06-08 日亜化学工業株式会社 窒化物半導体レーザダイオード
JPH09139543A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 半導体レーザ素子
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP2002043695A (ja) * 2000-07-26 2002-02-08 Sharp Corp 発光素子
JP2002171028A (ja) * 2000-11-30 2002-06-14 Nichia Chem Ind Ltd レーザ素子
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法

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