JP5135500B2 - 窒化物半導体素子 - Google Patents
窒化物半導体素子 Download PDFInfo
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- JP5135500B2 JP5135500B2 JP2007271364A JP2007271364A JP5135500B2 JP 5135500 B2 JP5135500 B2 JP 5135500B2 JP 2007271364 A JP2007271364 A JP 2007271364A JP 2007271364 A JP2007271364 A JP 2007271364A JP 5135500 B2 JP5135500 B2 JP 5135500B2
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 150000004767 nitrides Chemical class 0.000 title claims description 83
- 230000004888 barrier function Effects 0.000 claims description 81
- 239000000969 carrier Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
- H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Engineering & Computer Science (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
図1は、本発明の一実施形態による窒化物半導体素子を示した側断面図である。
12 n型窒化物半導体層
15、25 超格子構造活性層
15a、25a 量子障壁層
15b、25b 量子井戸層
17 p型窒化物半導体層
18 透明電極層
19a n側電極
19b p側電極
Claims (7)
- p型及びn型窒化物半導体層と、それらの間に形成され複数の量子障壁層及び量子井戸層が交代に積層されて成る活性層とを含み、
前記活性層は、前記量子障壁層が前記p型及びn型窒化物半導体層から供給されるキャリアがトンネリングできる厚さを有する超格子構造を有し、前記複数の量子障壁層のうち前記p型窒化物半導体層に最も近い量子障壁層は、それよりも前記n型窒化物半導体層側に位置する他の前記量子障壁層及び前記p型半導体層より大きいエネルギーバンドギャップを有し、前記p型窒化物半導体層に最も近い量子障壁層と前記p型窒化物半導体層との間には、前記量子井戸層が配置される窒化物半導体素子。 - 前記量子障壁層は、2〜10nmの厚さを有することを特徴とする請求項1に記載の窒化物半導体素子。
- 前記複数の量子障壁層はAlxGa1−xN(0≦x<1)からなり、前記p型窒化物半導体層に最も近い量子障壁層はAl含量が、それよりも前記n型窒化物半導体層側に位置する他の前記量子障壁層のAl含量より大きいことを特徴とする請求項1または2に記載の窒化物半導体素子。
- 前記p型窒化物半導体層に最も近い量子障壁層は、それよりも前記n型窒化物半導体層側に位置する他の前記量子障壁層と少なくとも一つの元素が異なる化合物半導体からなることを特徴とする請求項1または2に記載の窒化物半導体素子。
- 前記p型窒化物半導体層に最も近い量子障壁層はAlxGa1−xN(0≦x<1)からなり、前記p型窒化物半導体層に最も近い量子障壁層より前記n型窒化物半導体層側に位置する前記量子障壁層は、InyGa1−yN(0<y<1)からなることを特徴とする請求項4に記載の窒化物半導体素子。
- 前記複数の量子障壁層は、前記p型窒化物半導体層に近いものほど漸次大きいエネルギーバンドギャップを有することを特徴とする請求項1から5のいずれか1つに記載の窒化物半導体素子。
- 前記複数の量子障壁層は、少なくとも前記n型窒化物半導体層から前記p型窒化物半導体層に向かう方向の順に配置された第1乃至第3量子障壁層を含み、
前記第1量子障壁層はInaGa1−aN(0<a<1)で、前記第2量子障壁層はGaNで、前記第3量子障壁層はAlbGa1−bN(0<b<1)からなることを特徴とする請求項1、2、4、および6のいずれか1つに記載の窒化物半導体素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2006-0134120 | 2006-12-26 | ||
KR1020060134120A KR100862497B1 (ko) | 2006-12-26 | 2006-12-26 | 질화물 반도체 소자 |
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JP2008166712A JP2008166712A (ja) | 2008-07-17 |
JP5135500B2 true JP5135500B2 (ja) | 2013-02-06 |
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US (1) | US8008647B2 (ja) |
JP (1) | JP5135500B2 (ja) |
KR (1) | KR100862497B1 (ja) |
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DE112011101530B4 (de) | 2010-04-30 | 2021-03-25 | Trustees Of Boston University | Verfahren zur Herstellung einer optischen Vorrichtung |
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KR20080060053A (ko) | 2008-07-01 |
JP2008166712A (ja) | 2008-07-17 |
US20090045392A1 (en) | 2009-02-19 |
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