JP2004087763A5 - - Google Patents

Claims (12)

In a nitride semiconductor light emitting device having an active layer having a quantum well structure made of a nitride compound semiconductor layer containing In,
Distortion compensation layer having a larger band gap energy than the band gap energy of the barrier layer constituting the quantum well structure, the well layer and the at least one layer of the well layer at least one layer of the well layers constituting the quantum well structure A nitride-based semiconductor light-emitting device that is interposed between both sandwiched barrier layers. The nitride semiconductor light emitting device according to claim 1 in which the composition of the strain-compensating layer of 2-layer interposed respectively being different from each other between the two barrier layers sandwiching the well layer and the well layer. 2. The nitride-based semiconductor light-emitting device according to claim 1, wherein when the well layer and the barrier layer are composed of InGaN layers, the strain compensation layer is an AlGaN layer. 2. The nitride-based semiconductor light-emitting element according to claim 1, wherein a thickness of the strain compensation layer is smaller than both a thickness of the well layer and a thickness of the barrier layer. In a nitride semiconductor light emitting device having an active layer having a quantum well structure made of a nitride compound semiconductor layer containing In,
A nitride-based semiconductor light-emitting device, wherein a strain compensation layer having a band gap energy larger than that of the barrier layer constituting the quantum well structure is interposed in the barrier layer or the well layer. 6. The nitride-based semiconductor light-emitting device according to claim 5, wherein the composition of at least two of the barrier layers interposed in each barrier layer or each well layer is different from each other. 6. The nitride semiconductor light emitting device according to claim 5, wherein when the well layer and the barrier layer are composed of InGaN layers, the strain compensation layer is an AlGaN layer. 6. The nitride-based semiconductor light-emitting element according to claim 5, wherein the thickness of the strain compensation layer is smaller than both the thickness of the well layer and the thickness of the barrier layer. In a nitride semiconductor light emitting device having an active layer having a quantum well structure made of a nitride compound semiconductor layer containing In,
A strain compensation layer having a band gap energy larger than that of both the light guide layer and the barrier layer constituting the quantum well structure is provided on at least one of the light guide layers above and below the active layer. A nitride-based semiconductor light-emitting device, which is interposed in a layer. The nitride-based semiconductor light-emitting element according to claim 9, wherein the plurality of strain compensation layers are periodically interposed in the light guide layer. The nitride-based semiconductor light-emitting element according to claim 9, wherein when the light guide layer is an InGaN layer, the strain compensation layer is an AlGaN layer. 10. The nitride-based semiconductor light-emitting element according to claim 9, wherein a thickness of the strain compensation layer is smaller than both a thickness of the well layer and a thickness of the barrier layer.