JP2010541223A5 - - Google Patents

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Publication number
JP2010541223A5
JP2010541223A5 JP2010526158A JP2010526158A JP2010541223A5 JP 2010541223 A5 JP2010541223 A5 JP 2010541223A5 JP 2010526158 A JP2010526158 A JP 2010526158A JP 2010526158 A JP2010526158 A JP 2010526158A JP 2010541223 A5 JP2010541223 A5 JP 2010541223A5
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JP
Japan
Prior art keywords
quantum well
semiconductor chip
layer
well layer
optoelectronic semiconductor
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Application number
JP2010526158A
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English (en)
Japanese (ja)
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JP5404628B2 (ja
JP2010541223A (ja
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Publication date
Priority claimed from DE102007046027A external-priority patent/DE102007046027A1/de
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Publication of JP2010541223A publication Critical patent/JP2010541223A/ja
Publication of JP2010541223A5 publication Critical patent/JP2010541223A5/ja
Application granted granted Critical
Publication of JP5404628B2 publication Critical patent/JP5404628B2/ja
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JP2010526158A 2007-09-26 2008-09-12 多重量子井戸構造を有するオプトエレクトロニクス半導体チップ Active JP5404628B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007046027A DE102007046027A1 (de) 2007-09-26 2007-09-26 Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
DE102007046027.0 2007-09-26
PCT/DE2008/001534 WO2009039830A1 (de) 2007-09-26 2008-09-12 Optoelektronischer halbleiterchip mit einer mehrfachquantentopfstruktur

Publications (3)

Publication Number Publication Date
JP2010541223A JP2010541223A (ja) 2010-12-24
JP2010541223A5 true JP2010541223A5 (enExample) 2011-06-16
JP5404628B2 JP5404628B2 (ja) 2014-02-05

Family

ID=40194467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526158A Active JP5404628B2 (ja) 2007-09-26 2008-09-12 多重量子井戸構造を有するオプトエレクトロニクス半導体チップ

Country Status (8)

Country Link
US (1) US8173991B2 (enExample)
EP (1) EP2208240B1 (enExample)
JP (1) JP5404628B2 (enExample)
KR (1) KR101488846B1 (enExample)
CN (1) CN101809767B (enExample)
DE (1) DE102007046027A1 (enExample)
TW (1) TWI443859B (enExample)
WO (1) WO2009039830A1 (enExample)

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TWI496318B (zh) * 2009-06-08 2015-08-11 Epistar Corp 發光元件及其製造方法
KR100993085B1 (ko) 2009-12-07 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 라이트 유닛
DE102009060749B4 (de) 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
KR101637596B1 (ko) * 2010-07-09 2016-07-07 엘지이노텍 주식회사 발광소자
JP6005346B2 (ja) * 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
JP6426359B2 (ja) * 2014-03-24 2018-11-21 株式会社東芝 半導体発光素子及びその製造方法
DE102014111058A1 (de) 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
FR3028671B1 (fr) * 2014-11-19 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente a puits quantiques dopes et procede de fabrication associe
JP6188866B2 (ja) * 2016-05-19 2017-08-30 シャープ株式会社 窒化物半導体発光素子の製造方法
DE102016120419A1 (de) 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
KR20200009843A (ko) 2018-07-20 2020-01-30 홍익대학교 산학협력단 광전 소자 및 그 제조 방법
JP2020167321A (ja) * 2019-03-29 2020-10-08 旭化成株式会社 窒化物半導体発光素子
JP7469677B2 (ja) * 2019-11-26 2024-04-17 日亜化学工業株式会社 窒化物半導体素子
CN118782700B (zh) * 2024-09-11 2024-11-22 江西兆驰半导体有限公司 用于Micro-LED的外延片及其制备方法、Micro-LED

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US6849866B2 (en) * 1996-10-16 2005-02-01 The University Of Connecticut High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
US6121634A (en) * 1997-02-21 2000-09-19 Kabushiki Kaisha Toshiba Nitride semiconductor light emitting device and its manufacturing method
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DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US7366217B2 (en) * 2004-06-25 2008-04-29 Finisar Corporation Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes
US7184455B2 (en) * 2004-06-25 2007-02-27 Finisar Corporation Mirrors for reducing the effects of spontaneous emissions in photodiodes

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