JP2010532926A5 - - Google Patents

Download PDF

Info

Publication number
JP2010532926A5
JP2010532926A5 JP2010515344A JP2010515344A JP2010532926A5 JP 2010532926 A5 JP2010532926 A5 JP 2010532926A5 JP 2010515344 A JP2010515344 A JP 2010515344A JP 2010515344 A JP2010515344 A JP 2010515344A JP 2010532926 A5 JP2010532926 A5 JP 2010532926A5
Authority
JP
Japan
Prior art keywords
semiconductor body
layer
radiation
tunnel junction
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010515344A
Other languages
English (en)
Japanese (ja)
Other versions
JP5112511B2 (ja
JP2010532926A (ja
Filing date
Publication date
Priority claimed from DE102007031926A external-priority patent/DE102007031926A1/de
Application filed filed Critical
Publication of JP2010532926A publication Critical patent/JP2010532926A/ja
Publication of JP2010532926A5 publication Critical patent/JP2010532926A5/ja
Application granted granted Critical
Publication of JP5112511B2 publication Critical patent/JP5112511B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010515344A 2007-07-09 2008-06-20 放射線放出半導体ボディ Active JP5112511B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007031926A DE102007031926A1 (de) 2007-07-09 2007-07-09 Strahlungsemittierender Halbleiterkörper
DE102007031926.8 2007-07-09
PCT/DE2008/001039 WO2009006870A2 (de) 2007-07-09 2008-06-20 Strahlungsemittierender halbleiterkörper

Publications (3)

Publication Number Publication Date
JP2010532926A JP2010532926A (ja) 2010-10-14
JP2010532926A5 true JP2010532926A5 (enExample) 2011-09-08
JP5112511B2 JP5112511B2 (ja) 2013-01-09

Family

ID=39798138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010515344A Active JP5112511B2 (ja) 2007-07-09 2008-06-20 放射線放出半導体ボディ

Country Status (8)

Country Link
US (1) US8314415B2 (enExample)
EP (1) EP2165374B1 (enExample)
JP (1) JP5112511B2 (enExample)
KR (1) KR101466674B1 (enExample)
CN (1) CN101689594B (enExample)
DE (1) DE102007031926A1 (enExample)
TW (1) TW200910655A (enExample)
WO (1) WO2009006870A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008028036A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen
JP2012004283A (ja) * 2010-06-16 2012-01-05 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US8362458B2 (en) 2010-12-27 2013-01-29 Industrial Technology Research Institute Nitirde semiconductor light emitting diode
CN102097560B (zh) * 2010-12-31 2012-11-14 厦门市三安光电科技有限公司 具有复合式双电流扩展层的氮化物发光二极管
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
KR101813935B1 (ko) * 2011-06-09 2018-01-02 엘지이노텍 주식회사 발광소자
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
DE102012103686B4 (de) 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat
CN102738334B (zh) * 2012-06-19 2015-07-08 厦门市三安光电科技有限公司 具有电流扩展层的发光二极管及其制作方法
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
CN103715322B (zh) * 2013-12-30 2016-08-31 苏州矩阵光电有限公司 一种新型GaN基LED结构及制备方法
US20150207035A1 (en) * 2014-01-17 2015-07-23 Epistar Corporation Light-Emitting Element Having a Tunneling Structure
US10109767B2 (en) * 2014-04-25 2018-10-23 Seoul Viosys Co., Ltd. Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same
CN105374912B (zh) * 2015-10-28 2017-11-21 厦门市三安光电科技有限公司 发光二极管及其制作方法
CN107293624B (zh) * 2017-07-31 2019-07-09 河北工业大学 一种基于h-BN隧穿结为空穴注入层的发光二极管外延结构
JP7155723B2 (ja) * 2018-08-02 2022-10-19 株式会社リコー 発光素子及びその製造方法
CN111261744A (zh) * 2018-11-30 2020-06-09 东泰高科装备科技有限公司 多结太阳能电池及其制备方法
US11538962B2 (en) 2019-04-23 2022-12-27 Nichia Corporation Light-emitting element and method for manufacturing light-emitting element
JP7129630B2 (ja) * 2019-04-23 2022-09-02 日亜化学工業株式会社 発光素子および発光素子の製造方法
CN110148644B (zh) * 2019-05-30 2021-08-20 扬州乾照光电有限公司 一种具有量子阱结构隧穿结的多结太阳电池及制作方法
CN111244237B (zh) * 2020-01-15 2021-04-30 圆融光电科技股份有限公司 一种紫外led外延结构及其生长方法
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
CN112821198B (zh) * 2020-12-30 2022-08-30 中国电子科技集团公司第十三研究所 一种n面分立的倒序结构激光器芯片及制备方法
TWI777394B (zh) * 2021-01-29 2022-09-11 兆勁科技股份有限公司 邊射型雷射元件
CN117015860A (zh) * 2021-03-18 2023-11-07 日亚化学工业株式会社 发光元件
WO2022203910A1 (en) * 2021-03-22 2022-09-29 Lumileds Llc Green led with current-invariant emission wavelength
JP7385138B2 (ja) * 2021-09-08 2023-11-22 日亜化学工業株式会社 発光素子の製造方法
JP7432844B2 (ja) * 2021-12-17 2024-02-19 日亜化学工業株式会社 窒化物半導体発光素子
US20230208108A1 (en) * 2021-12-23 2023-06-29 Ii-Vi Delaware, Inc. Semiconductor laser diode including inverted p-n junction
EP4250380B1 (en) 2022-02-16 2025-07-30 Nichia Corporation Light emitting element
JP7466084B2 (ja) * 2022-02-16 2024-04-12 日亜化学工業株式会社 発光素子
JP2024083013A (ja) * 2022-12-09 2024-06-20 豊田合成株式会社 発光素子
CN120882185B (zh) * 2025-09-26 2025-12-09 微玖(苏州)光电科技有限公司 一种基于隧道结的高性能红光Micro LED外延结构及制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129926A (ja) * 1995-08-28 1997-05-16 Mitsubishi Cable Ind Ltd Ｉｉｉ族窒化物発光素子
KR100267839B1 (ko) 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
JP3658112B2 (ja) * 1995-11-06 2005-06-08 日亜化学工業株式会社 窒化物半導体レーザダイオード
JP3152170B2 (ja) * 1997-06-23 2001-04-03 昭和電工株式会社 化合物半導体発光素子
JP3719047B2 (ja) 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
US6515313B1 (en) 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6664605B1 (en) 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
JP2004111923A (ja) * 2002-08-22 2004-04-08 Osram Opto Semiconductors Gmbh ビーム放射性半導体構成素子
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US20040079947A1 (en) * 2002-10-26 2004-04-29 Wen-How Lan Light-emitting diode with low resistance layer
US6995389B2 (en) 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
US7099362B2 (en) * 2003-11-14 2006-08-29 Finisar Corporation Modulation doped tunnel junction
US7564887B2 (en) * 2004-06-30 2009-07-21 Finisar Corporation Long wavelength vertical cavity surface emitting lasers
JP2006080469A (ja) * 2004-09-13 2006-03-23 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
JP2006108585A (ja) * 2004-10-08 2006-04-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
DE102004050891B4 (de) 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US7473941B2 (en) * 2005-08-15 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Structures for reducing operating voltage in a semiconductor device
CN101882657A (zh) 2005-10-29 2010-11-10 三星电子株式会社 半导体器件及其制造方法
US7462884B2 (en) * 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
US7737451B2 (en) * 2006-02-23 2010-06-15 Cree, Inc. High efficiency LED with tunnel junction layer
JP2008078297A (ja) * 2006-09-20 2008-04-03 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
JP2011205148A (ja) * 2011-07-15 2011-10-13 Toshiba Corp 半導体装置

Similar Documents

Publication Publication Date Title
JP2010532926A5 (enExample)
JP5284365B2 (ja) 電流拡散層を有するｌｅｄ
TWI443859B (zh) 包含多重量子井結構的光電半導體晶片
JP2010541223A5 (enExample)
JP2013541209A5 (enExample)
JP2012015535A5 (enExample)
EP2736130A3 (en) Nitride semiconductor laser element
US9401455B1 (en) Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
KR20110106425A (ko) 질화물 반도체 발광소자 및 그 제조 방법
JPWO2011033625A1 (ja) 半導体発光素子
TW201029236A (en) Semiconductor light-emitting device
TW200536148A (en) Semiconductor light generating device
JP2011171369A (ja) 半導体発光素子
WO2014082192A1 (zh) 一种半导体外延结构及其发光器件
US8890114B2 (en) Light-emitting device
US10115859B2 (en) Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
CN102623595A (zh) 一种发光二极管外延材料结构
TWI559567B (zh) 氮化物半導體層積體及半導體發光元件
US8294164B2 (en) Light-emitting device using clad layer consisting of asymmetrical units
Feng et al. Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer
JP2010040838A5 (enExample)
JP2013516749A5 (enExample)
TW200711058A (en) Metal oxide semiconductor films, structures and methods
JP2011029493A5 (enExample)
Kudryk et al. Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading