JP2011029493A5 - - Google Patents

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Publication number
JP2011029493A5
JP2011029493A5 JP2009175352A JP2009175352A JP2011029493A5 JP 2011029493 A5 JP2011029493 A5 JP 2011029493A5 JP 2009175352 A JP2009175352 A JP 2009175352A JP 2009175352 A JP2009175352 A JP 2009175352A JP 2011029493 A5 JP2011029493 A5 JP 2011029493A5
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JP
Japan
Prior art keywords
active layer
layer
emitting laser
surface emitting
semiconductor multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009175352A
Other languages
English (en)
Japanese (ja)
Other versions
JP5355276B2 (ja
JP2011029493A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009175352A priority Critical patent/JP5355276B2/ja
Priority claimed from JP2009175352A external-priority patent/JP5355276B2/ja
Priority to US13/321,438 priority patent/US8416824B2/en
Priority to PCT/JP2010/061653 priority patent/WO2011013498A1/en
Publication of JP2011029493A publication Critical patent/JP2011029493A/ja
Publication of JP2011029493A5 publication Critical patent/JP2011029493A5/ja
Application granted granted Critical
Publication of JP5355276B2 publication Critical patent/JP5355276B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009175352A 2009-07-28 2009-07-28 面発光レーザ Expired - Fee Related JP5355276B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009175352A JP5355276B2 (ja) 2009-07-28 2009-07-28 面発光レーザ
US13/321,438 US8416824B2 (en) 2009-07-28 2010-07-02 Surface emitting laser with current constriction layer and multiple active regions
PCT/JP2010/061653 WO2011013498A1 (en) 2009-07-28 2010-07-02 Surface emitting laser with current constriction layer and multiple active region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009175352A JP5355276B2 (ja) 2009-07-28 2009-07-28 面発光レーザ

Publications (3)

Publication Number Publication Date
JP2011029493A JP2011029493A (ja) 2011-02-10
JP2011029493A5 true JP2011029493A5 (enExample) 2012-09-06
JP5355276B2 JP5355276B2 (ja) 2013-11-27

Family

ID=42937222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009175352A Expired - Fee Related JP5355276B2 (ja) 2009-07-28 2009-07-28 面発光レーザ

Country Status (3)

Country Link
US (1) US8416824B2 (enExample)
JP (1) JP5355276B2 (enExample)
WO (1) WO2011013498A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166108A (ja) * 2010-01-15 2011-08-25 Ricoh Co Ltd 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5735765B2 (ja) * 2010-08-06 2015-06-17 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ
JP6434406B2 (ja) * 2012-08-08 2018-12-05 デンマークス テクニスケ ウニヴェルシテト 波長掃引可能レーザー光源
JP6271934B2 (ja) * 2012-11-02 2018-01-31 キヤノン株式会社 窒化物半導体面発光レーザ及びその製造方法
US10892601B2 (en) * 2018-05-24 2021-01-12 Stanley Electric Co., Ltd. Vertical cavity light-emitting element

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US5157680A (en) * 1989-11-08 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Integrated semiconductor laser
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
JP2658883B2 (ja) * 1994-01-17 1997-09-30 日本電気株式会社 面発光素子
GB2295270A (en) 1994-11-14 1996-05-22 Sharp Kk Surface-emitting laser with profiled active region
US6760357B1 (en) * 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
JP2000174328A (ja) * 1998-12-03 2000-06-23 Oki Electric Ind Co Ltd 垂直微小共振器型発光ダイオード
JP2000299492A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 量子井戸型発光ダイオード
EP1081816A3 (en) 1999-09-03 2002-04-24 Agilent Technologies, Inc. (a Delaware corporation) Vertical cavity surface emitting laser (VCSEL) having undoped distributed bragg reflectors and using lateral current injection and method for maximizing gain and minimizing optical cavity loss
AU2001239892A1 (en) 2000-02-24 2001-09-03 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6567454B1 (en) 2001-05-01 2003-05-20 Sandia Corporation Coupled-resonator vertical-cavity lasers with two active gain regions
JP2004103754A (ja) * 2002-09-09 2004-04-02 Ricoh Co Ltd 面発光レーザ素子および面発光レーザモジュールおよび面発光レーザアレイおよび光伝送システム
US6771680B2 (en) * 2002-10-22 2004-08-03 Agilent Technologies, Inc Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)
JP2004227860A (ja) 2003-01-21 2004-08-12 Electric Power Dev Co Ltd ナトリウム−硫黄電池及びその小型積層電池
KR100982421B1 (ko) * 2004-10-14 2010-09-15 삼성전자주식회사 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자
EP1648060B1 (en) 2004-10-14 2008-07-23 Samsung Electronics Co.,Ltd. Funnel structure vertical external cavity surface-emitting laser (VECSEL)
JP4908837B2 (ja) 2005-12-13 2012-04-04 キヤノン株式会社 発光素子アレイ及び画像形成装置
JP4210690B2 (ja) * 2006-03-31 2009-01-21 Ｄｏｗａエレクトロニクス株式会社 面発光素子
JP4110181B2 (ja) 2006-09-01 2008-07-02 キヤノン株式会社 半導体レーザ装置
JP4343986B2 (ja) * 2007-02-14 2009-10-14 キヤノン株式会社 赤色面発光レーザ素子、画像形成装置、及び画像表示装置
JP2009010248A (ja) 2007-06-29 2009-01-15 Canon Inc 面発光レーザおよびその製造方法
JP4974981B2 (ja) 2007-09-21 2012-07-11 キヤノン株式会社 垂直共振器型面発光レーザ素子、及び該垂直共振器型面発光レーザ素子を用いた画像形成装置
US7839913B2 (en) 2007-11-22 2010-11-23 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
JP5058939B2 (ja) 2007-11-27 2012-10-24 キヤノン株式会社 面発光レーザ、該面発光レーザによって構成される光学機器
JP4621263B2 (ja) 2008-02-22 2011-01-26 キヤノン株式会社 面発光レーザおよび画像形成装置
JP5279393B2 (ja) 2008-07-31 2013-09-04 キヤノン株式会社 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
JP5735765B2 (ja) 2010-08-06 2015-06-17 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ

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