JP6434406B2 - 波長掃引可能レーザー光源 - Google Patents
波長掃引可能レーザー光源 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 24
- 230000010355 oscillation Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000725 suspension Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 11
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- 230000010358 mechanical oscillation Effects 0.000 claims description 5
- 230000002459 sustained effect Effects 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 9
- 238000012014 optical coherence tomography Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
- H01S5/1096—Multi-wavelength lasing in a single cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
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Description
基板と、
第1の反射器と、
第2の反射器と、
を備える。第1の反射器及び第2の反射器はともに光学キャビティを画定し、基板に垂直な方向の光学経路に沿った光学キャビティ内の光発振をサポートするように配置され、光学キャビティは光学経路内に空洞を備え、第2の反射器は第1の反射器から或る距離にサスペンションによって弾力的に取り付けられ、静止位置を有し、第2の反射器及びサスペンションはともにマイクロエレクトロメカニカルMEMS発振器を画定し、このMEMS発振器は或る共振周波数を有するとともに静止位置の両側に第2の反射器を発振させるように構成される。レーザー光源は、
MEMS発振器に電界を印加するように構成される電気的接続、
を更に備える。
先行する請求項のいずれか一項に記載のレーザー光源と、
レーザー光源の電気的接続を介して変調電圧をMEMSに印加するように構成される電源と、
を備え、電源は変調周波数を用いて変調電圧を変調するように構成され、変調周波数は実質的に共振周波数に等しいか又は実質的に共振周波数の高調波である。
Claims (19)
- 波長掃引可能レーザー光源であって、該レーザー光源はレージング波長のレーザー光を生成するように構成される半導体レーザー光源であり、
前記レーザー光源は、
基板と、
第1の反射器と、
第2の反射器と、
を備え、
前記第1の反射器及び前記第2の反射器はともに光学キャビティを画定し、前記基板に垂直な方向の光学経路に沿った前記光学キャビティ内の光発振をサポートするように配置され、前記光学キャビティは前記光学経路内に空洞を備え、前記第2の反射器は前記第1の反射器から或る距離にサスペンションによって弾力的に取り付けられ、静止位置を有し、前記第2の反射器及び前記サスペンションはともにマイクロエレクトロメカニカル(MEMS)発振器を画定し、該MEMS発振器は或る共振周波数を有するとともに前記静止位置の両側に前記第2の反射器を発振させるように構成され、
前記レーザー光源は、電気的接続と、前記電気的接続に接続されるとともに前記第2の反射器の前記静止位置と比較して前記第1の反射器に近づける方へ及び前記第1の反射器から遠ざける方の双方に前記MEMS発振器を掃引するように構成され、交流(AC)変調電圧又は脈動直流変調電圧を前記MEMS発振器に印加するように構成される、電源と、を更に備え、
前記レーザー光源は前記MEMS発振器を少なくとも動作中に200Torr以下の圧力を有する真空下に保持するようにパッケージ封入され、該パッケージ封入されたMEMS発振器の機械的品質係数は少なくとも10である、波長掃引可能レーザー光源。 - 前記第2の反射器は、サブ波長格子であるか又はサブ波長格子を含む、請求項1に記載の波長掃引可能レーザー光源。
- 前記第2の反射器は、高屈折率差サブ波長格子(HCG)であるか又は高屈折率差サブ波長格子(HCG)を含む、請求項1乃至2のいずれか一項に記載の波長掃引可能レーザー光源。
- 前記第2の反射器は、分布ブラッグ反射器(DBR)であるか又は分布ブラッグ反射器(DBR)を含む、請求項1に記載の波長掃引可能レーザー光源。
- 前記キャビティ内の前記光学経路内に反射防止コーティングを備える、請求項1乃至4のいずれか一項に記載の波長掃引可能レーザー光源。
- 前記反射防止コーティングはAlxGa1−xAs層を酸化することによって作製され、ここで、xは0.7より大きい、請求項5に記載の波長掃引可能レーザー光源。
- 前記レーザー光源は、前記キャビティの前記光学経路内に活性領域を備え、
該活性領域は、少なくとも、第1のゲイン波長域に対応するバンドギャップを有するように構成される第1の量子井戸(QW)領域を備え、
該第1のQW領域は、前記第1の反射器から第1の距離に配置される、請求項1乃至6のいずれか一項に記載の波長掃引可能レーザー光源。 - 前記活性領域は、第2のゲイン波長域に対応するバンドギャップを有するように構成される第2の量子井戸(QW)領域を更に備え、
前記第2のQW領域は前記第1の反射器から第2の距離に配置され、前記第2のゲイン波長は前記第1のゲイン波長より長く、前記第2の距離は前記第1の距離より大きい、請求項7に記載の波長掃引可能レーザー光源。 - 前記レーザー光源は、第1のレーザーモード及び第2のレーザーモードをサポートし、
前記第1の距離は前記第1のQW領域と前記第1のレーザーモードとの間の第1のオーバーラップが前記第1のQW領域と前記第2のレーザーモードとの間の第2のオーバーラップより大きいように選択される、請求項7又は8に記載の波長掃引可能レーザー光源。 - 請求項1乃至9のいずれか一項に記載の波長掃引可能レーザー光源の使用方法であって、前記レーザー光源は垂直キャビティ面発光レーザー(VCSEL)を備え、該VCSELは第1の反射器とマイクロエレクトロメカニカルシステム(MEMS)の第2の反射器とを備え、該第2の反射器は前記VCSELキャビティの一部分であるとともに前記MEMSへの印加電圧によって作動可能であり、前記MEMSは共振周波数を有し、
該方法は、前記第2の反射器の前記位置を作動させるように電源からの変調電圧を前記レーザー光源の前記MEMSに印加することを含み、前記電圧は前記共振周波数又は前記共振周波数の高調波に実質的に等しい変調周波数を有する、請求項1乃至9のいずれか一項に記載の波長掃引可能レーザー光源の使用方法。 - 掃引レーザー光源システムであって、該システムはレーザー光源と電源とを備え、前記レーザー光源はレージング波長のレーザー光を生成するように構成される半導体レーザー光源であり、
前記レーザー光源は、
基板と、
第1の反射器と、
第2の反射器と、
を備え、
前記第1の反射器及び前記第2の反射器はともに光学キャビティを画定し、前記基板に垂直な方向の光学経路に沿った前記光学キャビティ内の光発振をサポートするように配置され、前記光学キャビティは前記光学経路内に空洞を備え、前記第2の反射器は前記第1の反射器から或る距離にサスペンションによって弾力的に取り付けられ、静止位置を有し、前記第2の反射器及び前記サスペンションはともにマイクロエレクトロメカニカル(MEMS)発振器を画定し、該MEMS発振器は或る共振周波数を有するとともに前記静止位置の両側に前記第2の反射器を発振させるように構成され、
前記レーザー光源は、前記MEMS発振器に電界を印加するように構成される電気的接続を更に備え、
前記電源は、前記レーザー光源の前記電気的接続を介して脈動直流変調電圧を前記MEMS発振器に印加するように構成され、
前記脈動直流変調電圧は、前記MEMS発振器が残余空隙幅の50%より大きい振幅で機械的発振を持続し、前記第1の反射器への前記MEMS発振器のスナップインを防止するように、選択されたデューティーサイクルを有する、掃引レーザー光源システム。 - 前記電源は、前記共振周波数にマッチングする変調周波数を用いて前記変調電圧を変調するように構成される、請求項11に記載の掃引レーザー光源システム。
- 前記変調電圧は、パルス列であるか又はパルス列を含む波形によって変調される、請求項11又は12に記載の掃引レーザー光源システム。
- 前記パルス列は、15%より小さいデューティーサイクルを有する、請求項13に記載の掃引レーザー光源システム。
- ハウジングを備え、
前記レーザー光源は前記ハウジング内に配置され、
前記ハウジングは、該ハウジング内を200Torr以下の圧力を有する真空に維持するように動作可能である、請求項11乃至14のいずれか一項に記載の掃引レーザー光源システム。 - 前記脈動直流変調電圧は、前記第2の反射器が該第2の反射器の静止位置を横切り、前記第1の発振器に向かって移動するときに電圧パルスを与えるように構成される、請求項11乃至15のいずれか一項に記載の掃引レーザー光源システム。
- レーザー光源の使用方法であって、前記レーザー光源は垂直キャビティ面発光レーザー(VCSEL)を備え、該VCSELは第1の反射器とマイクロエレクトロメカニカルシステム(MEMS)の第2の反射器とを備え、該第2の反射器は前記VCSELキャビティの一部分であるとともに前記MEMSへの印加電圧によって作動可能であり、前記MEMSは共振周波数を有し、
該方法は、前記第2の反射器の前記位置を作動させるように電源からの変調された脈動直流電圧を前記レーザー光源の前記MEMSに印加することを含み、前記変調された電圧は前記共振周波数にマッチングする変調周波数を有し、前記脈動直流変調電圧は、前記MEMS発振器が残余空隙幅の50%より大きい振幅で機械的発振を持続し、前記第1の反射器への前記MEMS発振器のスナップインを防止するように、選択されたデューティーサイクルを有する、レーザー光源の使用方法。 - 前記MEMS発振器を少なくとも動作中に中真空下又は低真空下に保持することを含む、請求項17に記載の方法。
- 前記電源は、前記第2の反射器が前記光学キャビティの空隙の1/3より大きい偏位を有するとき、前記変調電圧を除去するように構成される、請求項11に記載の掃引レーザー光源システム。
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