JP2013541209A5 - - Google Patents

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Publication number
JP2013541209A5
JP2013541209A5 JP2013530187A JP2013530187A JP2013541209A5 JP 2013541209 A5 JP2013541209 A5 JP 2013541209A5 JP 2013530187 A JP2013530187 A JP 2013530187A JP 2013530187 A JP2013530187 A JP 2013530187A JP 2013541209 A5 JP2013541209 A5 JP 2013541209A5
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JP
Japan
Prior art keywords
region
waveguide layer
thickness
cladding layer
layer
Prior art date
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Pending
Application number
JP2013530187A
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English (en)
Japanese (ja)
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JP2013541209A (ja
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Publication date
Priority claimed from US12/885,951 external-priority patent/US8897329B2/en
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Publication of JP2013541209A publication Critical patent/JP2013541209A/ja
Publication of JP2013541209A5 publication Critical patent/JP2013541209A5/ja
Pending legal-status Critical Current

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JP2013530187A 2010-09-20 2011-09-13 Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造 Pending JP2013541209A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/885,951 2010-09-20
US12/885,951 US8897329B2 (en) 2010-09-20 2010-09-20 Group III nitride-based green-laser diodes and waveguide structures thereof
PCT/US2011/051343 WO2012039997A2 (en) 2010-09-20 2011-09-13 Group iii nitride-based green-laser diodes and waveguide structures thereof

Publications (2)

Publication Number Publication Date
JP2013541209A JP2013541209A (ja) 2013-11-07
JP2013541209A5 true JP2013541209A5 (enExample) 2015-10-15

Family

ID=44674908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013530187A Pending JP2013541209A (ja) 2010-09-20 2011-09-13 Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造

Country Status (6)

Country Link
US (1) US8897329B2 (enExample)
JP (1) JP2013541209A (enExample)
KR (1) KR20130099099A (enExample)
CN (1) CN103119809B (enExample)
TW (1) TW201220628A (enExample)
WO (1) WO2012039997A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8379684B1 (en) * 2011-08-16 2013-02-19 Corning Incorporated Hole blocking layers in non-polar and semi-polar green light emitting devices
US20130322481A1 (en) * 2012-05-31 2013-12-05 Rajaram Bhat Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets
CN102723995B (zh) * 2012-07-11 2015-12-09 东莞铭普光磁股份有限公司 一种有源光模块控制器
JP5781032B2 (ja) * 2012-07-30 2015-09-16 株式会社東芝 半導体発光素子
US20140077153A1 (en) * 2012-09-14 2014-03-20 Tsmc Solid State Lighting Ltd. Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate
DE102012220911A1 (de) * 2012-09-27 2014-05-15 Osram Opto Semiconductors Gmbh Halbleiterlaser mit verbesserter Stromführung
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US9124071B2 (en) * 2012-11-27 2015-09-01 Nichia Corporation Nitride semiconductor laser element
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
TWI738640B (zh) * 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
CN107093628B (zh) * 2017-04-07 2019-12-06 电子科技大学 一种极化掺杂增强型hemt器件
WO2019002694A1 (en) * 2017-06-30 2019-01-03 Oulun Yliopisto METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL APPARATUS AND APPARATUS
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN111697428B (zh) * 2020-06-16 2021-08-10 东莞理工学院 一种氮化镓基激光二极管外延结构及其制备方法
JPWO2022202448A1 (enExample) * 2021-03-24 2022-09-29
CN114006266B (zh) * 2021-10-12 2023-10-13 厦门三安光电有限公司 激光二极管
WO2024091031A1 (ko) * 2022-10-27 2024-05-02 주식회사 소프트에피 3족 질화물 반도체 발광소자

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5048038A (en) * 1990-01-25 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Ion-implanted planar-buried-heterostructure diode laser
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP3372226B2 (ja) * 1999-02-10 2003-01-27 日亜化学工業株式会社 窒化物半導体レーザ素子
MY129352A (en) 2001-03-28 2007-03-30 Nichia Corp Nitride semiconductor device
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
US6724013B2 (en) 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US7279751B2 (en) 2004-06-21 2007-10-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and manufacturing method thereof
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
KR100701006B1 (ko) * 2005-05-31 2007-03-29 한국전자통신연구원 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드
KR20070000290A (ko) * 2005-06-27 2007-01-02 삼성전자주식회사 비대칭 광도파층을 지닌 반도체 레이저 다이오드
KR100837404B1 (ko) 2006-10-18 2008-06-12 삼성전자주식회사 반도체 광전 소자
JP2008177213A (ja) 2007-01-16 2008-07-31 Toshiba Corp 半導体レーザ装置
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
JP2009164233A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子およびその製造方法
JP4720834B2 (ja) * 2008-02-25 2011-07-13 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
JP2009246005A (ja) 2008-03-28 2009-10-22 Furukawa Electric Co Ltd:The 半導体発光素子
JP2010109332A (ja) * 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
US8084763B2 (en) * 2008-10-31 2011-12-27 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
JP4912386B2 (ja) * 2008-11-26 2012-04-11 シャープ株式会社 ＩｎＧａＮ層の製造方法
JP5316276B2 (ja) * 2009-01-23 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法

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