JP2013530537A - 深紫外発光ダイオード - Google Patents
深紫外発光ダイオード Download PDFInfo
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- JP2013530537A JP2013530537A JP2013515541A JP2013515541A JP2013530537A JP 2013530537 A JP2013530537 A JP 2013530537A JP 2013515541 A JP2013515541 A JP 2013515541A JP 2013515541 A JP2013515541 A JP 2013515541A JP 2013530537 A JP2013530537 A JP 2013530537A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910016455 AlBN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- ZHWKJMGWTPJJRZ-UHFFFAOYSA-I magnesium pentafluoroaluminum(2-) Chemical compound [F-].[F-].[F-].[F-].[F-].[Mg++].[Al+3] ZHWKJMGWTPJJRZ-UHFFFAOYSA-I 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
【選択図】 図2
Description
Claims (21)
- n型コンタクト層と、
前記n型コンタクト層に隣接する第1の側部を有する光発生構造体であって、該光発生構造体が、量子井戸のセットを備え、前記n型コンタクト層のエネルギーと量子井戸の前記セット中のある一の量子井戸の電子基底状態エネルギーとの間の差が、該光発生構造体の材料における極性光学フォノンのエネルギーを上回り、該光発生構造体の幅が、該光発生構造体中に注入される電子による極性光学フォノン放出の平均自由行程に相当する、光発生構造体と
を具備する、発光ヘテロ構造体。 - 前記量子井戸の前記電子基底状態エネルギーが、ほぼ熱エネルギー分だけ前記極性光学フォノンの前記エネルギーを上回る、請求項1に記載のヘテロ構造体。
- 障壁層をさらに備え、
前記障壁層のエネルギーと量子井戸の前記セット中のある一の量子井戸の電子基底状態エネルギーとの間の差が、前記光発生構造体の前記材料における極性光学フォノンの前記エネルギーを上回る、請求項1に記載のヘテロ構造体。 - 前記光発生構造体が、量子井戸の前記セットとの間でインターレース配置される障壁のセットを備え、障壁の前記セットが、量子井戸の前記セットの中の第1の量子井戸及び前記光発生構造体の前記第1の側部に直に隣接する第1の障壁を備え、前記第1の障壁の厚さが、電場内に注入された電子を加速して、前記第1の量子井戸におけるエネルギー状態に対して前記極性光学フォノンの前記エネルギーに到達させるのに十分なものであり、前記光発生構造体の残りの部分の厚さが、前記極性光学フォノンの放出の平均自由行程を上回る、請求項1に記載のヘテロ構造体。
- 少なくとも部分的に透過性の基板であって、前記n型コンタクトが、該基板と前記光発生構造体との間に位置し、前記光発生構造体により発生される光に対して少なくとも部分的に透過性である、基板と、
前記n型コンタクトとして前記光発生構造体の対向側部上に形成されるブラッグ反射構造体であって、前記光発生構造体により発生される光を前記基板の方向に反射するように構成される、ブラッグ反射構造体と
をさらに備える、請求項1に記載のヘテロ構造体。 - 前記光発生構造体と前記ブラッグ反射構造体との間に形成された電子障壁層をさらに備える、請求項5に記載のヘテロ構造体。
- 前記n型コンタクトが、短周期超格子を備える、請求項5に記載のヘテロ構造体。
- 複合コンタクトをさらに備え、
前記複合コンタクトが、
前記光発生構造体により発生される光に対して少なくとも部分的に透過性である接着層と、
前記光発生構造体により発生される前記光の少なくとも一部分を反射するように構成された反射性金属層と
を備える、請求項1に記載のヘテロ構造体。 - 前記接着層が、ニッケル、パラジウム、モリブデン及びコバルトの中の1つからなる薄層を備え、前記反射性金属層が、アルミニウム、強化アルミニウム、ロジウム及び強化ロジウムの中の1つを含む、請求項8に記載のヘテロ構造体。
- 前記接着層が、非均一層を備える、請求項8に記載のヘテロ構造体。
- 前記非均一接着層が、フォトニック結晶を形成するように構成される、請求項10に記載のヘテロ構造体。
- 前記複合コンタクトとして前記光発生構造体の対向側部上に位置する分散半導体ヘテロ構造ブラッグ反射(DBR)構造体をさらに備える、請求項8に記載のヘテロ構造体。
- 複合コンタクトをさらに備え、
ひ前記複合コンタクトの少なくとも1つの層が、グラフェンから形成される、請求項1に記載のヘテロ構造体。 - 金属超格子コンタクトをさらに備え、
ひ前記金属超格子が、第1の金属及び前記第1の金属とは異なる第2の金属からなる複数の交絡層を備え、前記金属超格子が、前記光発生構造体により発生される光に対して少なくとも部分的に透過性である、請求項1に記載のヘテロ構造体。 - n型コンタクト層と、
前記n型コンタクト層に隣接する第1の側部を有する光発生構造体であって、該光発生構造体が、量子井戸のセットを備え、該光発生構造体の幅が、該光発生構造体中に注入される電子の極性光学フォノン放出の平均自由行程に相当する、光発生構造体と、
前記第1の側部の対向側の前記光発生構造体の第2の側部の上に位置する障壁層であって、該障壁層のエネルギーと量子井戸の前記セット中のある一の量子井戸の電子基底状態エネルギーとの間の差が、前記光発生構造体の前記材料における極性光学フォノンのエネルギーを上回る、障壁層と
を備える、発光ヘテロ構造体。 - 前記光発生構造体が、量子井戸のセットとの間でインターレース配置される障壁のセットを備え、障壁の前記セットが、量子井戸の前記セットの中の第1の量子井戸及び前記光発生構造体の前記第1の側部に直に隣接する第1の障壁を備え、前記第1の障壁の厚さが、電場内に注入された電子を加速して、前記第1の量子井戸におけるエネルギー状態に対して前記極性光学フォノンの前記エネルギーに到達させるのに十分なものであり、前記光発生構造体の残りの部分の厚さが、前記極性光学フォノンの放出の平均自由行程を上回る、請求項15に記載のヘテロ構造体。
- 複合コンタクトをさらに備え、
前記複合コンタクトが、
前記光発生構造体により発生される光に対して少なくとも部分的に透過性である接着層と、
前記光発生構造体により発生される前記光の少なくとも一部分を反射するように構成された反射性金属層と
を備える、請求項15に記載のヘテロ構造体。 - 前記接着層が、ニッケル、パラジウム、モリブデン及びコバルトの中の1つからなる薄層を備え、前記反射性金属層が、アルミニウム、強化アルミニウム、ロジウム及び強化ロジウムの中の1つを含む、請求項17に記載のヘテロ構造体。
- n型コンタクト層と、
前記n型コンタクト層に隣接する第1の側部を有する光発生構造体と、
複合コンタクトと
を具備する発光デバイスであって、
前記複合コンタクトが、
前記光発生構造体により発生される光に対して少なくとも部分的に透過性である接着層と、
前記光発生構造体により発生される前記光の少なくとも一部分を反射するように構成された反射性金属層と
を備える、発光デバイス。 - 前記接着層が、ニッケル、パラジウム、モリブデン及びコバルトの中の1つからなる薄層を備え、前記反射性金属層が、アルミニウム、強化アルミニウム、ロジウム及び強化ロジウムの中の1つを含む、請求項19に記載のデバイス。
- 前記光発生構造体が、
量子井戸のセットであって、前記n型コンタクト層のエネルギーと量子井戸の前記セット中のある一の量子井戸の電子基底状態エネルギーとの間の差が、前記光発生構造体の材料における極性光学フォノンのエネルギーを上回る、量子井戸のセットと、
量子井戸の前記セットとの間でインターレース配置される障壁のセットと
を具備し、
障壁の前記セットが、量子井戸の前記セットの中の第1の量子井戸及び前記光発生構造体の前記第1の側部に直に隣接する第1の障壁を備え、前記第1の障壁の厚さが、電場内に注入された電子を加速して、前記第1の量子井戸における前記電子基底状態エネルギーに対して前記極性光学フォノンの前記エネルギーに到達させるのに十分なものであり、前記光発生構造体の残りの部分の厚さが、前記光発生構造体中に注入される電子の極性光学フォノンの放出の平均自由行程を上回る、請求項19に記載のデバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35648410P | 2010-06-18 | 2010-06-18 | |
US61/356,484 | 2010-06-18 | ||
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KR20140130715A (ko) | 2014-11-11 |
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CN103038900B (zh) | 2016-04-06 |
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US20110309326A1 (en) | 2011-12-22 |
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