CN103119809B - 基于第iii族氮化物的绿光激光二极管及其波导结构 - Google Patents

基于第iii族氮化物的绿光激光二极管及其波导结构 Download PDF

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Publication number
CN103119809B
CN103119809B CN201180045031.3A CN201180045031A CN103119809B CN 103119809 B CN103119809 B CN 103119809B CN 201180045031 A CN201180045031 A CN 201180045031A CN 103119809 B CN103119809 B CN 103119809B
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layer
conducting shell
wave conducting
coating layer
thickness
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CN103119809A (zh
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R·巴特
D·兹佐夫
C-E·扎
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Corning Inc
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Corning Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
CN201180045031.3A 2010-09-20 2011-09-13 基于第iii族氮化物的绿光激光二极管及其波导结构 Expired - Fee Related CN103119809B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/885,951 2010-09-20
US12/885,951 US8897329B2 (en) 2010-09-20 2010-09-20 Group III nitride-based green-laser diodes and waveguide structures thereof
PCT/US2011/051343 WO2012039997A2 (en) 2010-09-20 2011-09-13 Group iii nitride-based green-laser diodes and waveguide structures thereof

Publications (2)

Publication Number Publication Date
CN103119809A CN103119809A (zh) 2013-05-22
CN103119809B true CN103119809B (zh) 2015-09-16

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Country Status (6)

Country Link
US (1) US8897329B2 (enExample)
JP (1) JP2013541209A (enExample)
KR (1) KR20130099099A (enExample)
CN (1) CN103119809B (enExample)
TW (1) TW201220628A (enExample)
WO (1) WO2012039997A2 (enExample)

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US20130322481A1 (en) * 2012-05-31 2013-12-05 Rajaram Bhat Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets
CN102723995B (zh) * 2012-07-11 2015-12-09 东莞铭普光磁股份有限公司 一种有源光模块控制器
JP5781032B2 (ja) * 2012-07-30 2015-09-16 株式会社東芝 半導体発光素子
US20140077153A1 (en) * 2012-09-14 2014-03-20 Tsmc Solid State Lighting Ltd. Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate
DE102012220911A1 (de) * 2012-09-27 2014-05-15 Osram Opto Semiconductors Gmbh Halbleiterlaser mit verbesserter Stromführung
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
JP6255939B2 (ja) * 2012-11-27 2018-01-10 日亜化学工業株式会社 窒化物半導体レーザ素子
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
TWI738640B (zh) * 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
CN107093628B (zh) * 2017-04-07 2019-12-06 电子科技大学 一种极化掺杂增强型hemt器件
CN111108657B (zh) * 2017-06-30 2022-06-14 奥卢大学 一种光学半导体装置及其制造方法
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN111697428B (zh) * 2020-06-16 2021-08-10 东莞理工学院 一种氮化镓基激光二极管外延结构及其制备方法
JPWO2022202448A1 (enExample) * 2021-03-24 2022-09-29
CN114006266B (zh) * 2021-10-12 2023-10-13 厦门三安光电有限公司 激光二极管
WO2024091031A1 (ko) * 2022-10-27 2024-05-02 주식회사 소프트에피 3족 질화물 반도체 발광소자

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WO2012039997A3 (en) 2012-10-04
JP2013541209A (ja) 2013-11-07
KR20130099099A (ko) 2013-09-05
US20120069863A1 (en) 2012-03-22
US8897329B2 (en) 2014-11-25
WO2012039997A2 (en) 2012-03-29
TW201220628A (en) 2012-05-16
CN103119809A (zh) 2013-05-22

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