JP2013541209A - Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造 - Google Patents

Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造 Download PDF

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JP2013541209A
JP2013541209A JP2013530187A JP2013530187A JP2013541209A JP 2013541209 A JP2013541209 A JP 2013541209A JP 2013530187 A JP2013530187 A JP 2013530187A JP 2013530187 A JP2013530187 A JP 2013530187A JP 2013541209 A JP2013541209 A JP 2013541209A
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layer
region
thickness
waveguide layer
cladding layer
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Japanese (ja)
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JP2013541209A5 (enExample
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バット，ラジャラム
シゾフ，ドミトリー
ザー，チュンエン
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Corning Inc
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Corning Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
JP2013530187A 2010-09-20 2011-09-13 Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造 Pending JP2013541209A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/885,951 2010-09-20
US12/885,951 US8897329B2 (en) 2010-09-20 2010-09-20 Group III nitride-based green-laser diodes and waveguide structures thereof
PCT/US2011/051343 WO2012039997A2 (en) 2010-09-20 2011-09-13 Group iii nitride-based green-laser diodes and waveguide structures thereof

Publications (2)

Publication Number Publication Date
JP2013541209A true JP2013541209A (ja) 2013-11-07
JP2013541209A5 JP2013541209A5 (enExample) 2015-10-15

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JP2013530187A Pending JP2013541209A (ja) 2010-09-20 2011-09-13 Ｉｉｉ族元素窒化物ベース緑色レーザダイオード及びその導波路構造

Country Status (6)

Country Link
US (1) US8897329B2 (enExample)
JP (1) JP2013541209A (enExample)
KR (1) KR20130099099A (enExample)
CN (1) CN103119809B (enExample)
TW (1) TW201220628A (enExample)
WO (1) WO2012039997A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017524252A (ja) * 2014-08-04 2017-08-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびその製造方法
JP2021525962A (ja) * 2018-05-30 2021-09-27 エヌライト， インコーポレイテッドＮｌｉｇｈｔ， Ｉｎｃ． 量子井戸オフセットおよび効率的な単一モードレーザ発光を速軸に沿って有する大光共振器（ｌｏｃ）レーザダイオード
WO2022202448A1 (ja) * 2021-03-24 2022-09-29 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子

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US8379684B1 (en) * 2011-08-16 2013-02-19 Corning Incorporated Hole blocking layers in non-polar and semi-polar green light emitting devices
US20130322481A1 (en) * 2012-05-31 2013-12-05 Rajaram Bhat Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets
CN102723995B (zh) * 2012-07-11 2015-12-09 东莞铭普光磁股份有限公司 一种有源光模块控制器
JP5781032B2 (ja) * 2012-07-30 2015-09-16 株式会社東芝 半導体発光素子
US20140077153A1 (en) * 2012-09-14 2014-03-20 Tsmc Solid State Lighting Ltd. Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate
DE102012220911A1 (de) * 2012-09-27 2014-05-15 Osram Opto Semiconductors Gmbh Halbleiterlaser mit verbesserter Stromführung
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
JP6255939B2 (ja) * 2012-11-27 2018-01-10 日亜化学工業株式会社 窒化物半導体レーザ素子
TWI738640B (zh) * 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
CN107093628B (zh) * 2017-04-07 2019-12-06 电子科技大学 一种极化掺杂增强型hemt器件
EP3646420B1 (en) * 2017-06-30 2022-06-01 Oulun yliopisto Method of manufacturing optical semiconductor apparatus and the apparatus
CN111697428B (zh) * 2020-06-16 2021-08-10 东莞理工学院 一种氮化镓基激光二极管外延结构及其制备方法
CN116742476A (zh) * 2021-10-12 2023-09-12 厦门三安光电有限公司 激光二极管
WO2024091031A1 (ko) * 2022-10-27 2024-05-02 주식회사 소프트에피 3족 질화물 반도체 발광소자

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JP2000299532A (ja) * 1999-02-10 2000-10-24 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
WO2010051537A1 (en) * 2008-10-31 2010-05-06 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
JP2010109332A (ja) * 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
JP2010192865A (ja) * 2009-01-23 2010-09-02 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法

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JP4720834B2 (ja) * 2008-02-25 2011-07-13 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
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JP2000299532A (ja) * 1999-02-10 2000-10-24 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
JP2010109332A (ja) * 2008-09-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ装置および表示装置
WO2010051537A1 (en) * 2008-10-31 2010-05-06 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
JP2010192865A (ja) * 2009-01-23 2010-09-02 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017524252A (ja) * 2014-08-04 2017-08-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびその製造方法
JP2021525962A (ja) * 2018-05-30 2021-09-27 エヌライト， インコーポレイテッドＮｌｉｇｈｔ， Ｉｎｃ． 量子井戸オフセットおよび効率的な単一モードレーザ発光を速軸に沿って有する大光共振器（ｌｏｃ）レーザダイオード
JP7361728B2 (ja) 2018-05-30 2023-10-16 エヌライト， インコーポレイテッド 量子井戸オフセットおよび効率的な単一モードレーザ発光を速軸に沿って有する大光共振器（ｌｏｃ）レーザダイオード
WO2022202448A1 (ja) * 2021-03-24 2022-09-29 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子
JPWO2022202448A1 (enExample) * 2021-03-24 2022-09-29

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Publication number Publication date
US8897329B2 (en) 2014-11-25
WO2012039997A3 (en) 2012-10-04
CN103119809A (zh) 2013-05-22
US20120069863A1 (en) 2012-03-22
CN103119809B (zh) 2015-09-16
KR20130099099A (ko) 2013-09-05
WO2012039997A2 (en) 2012-03-29
TW201220628A (en) 2012-05-16

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