TWI443859B - 包含多重量子井結構的光電半導體晶片 - Google Patents

包含多重量子井結構的光電半導體晶片 Download PDF

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Publication number
TWI443859B
TWI443859B TW097136253A TW97136253A TWI443859B TW I443859 B TWI443859 B TW I443859B TW 097136253 A TW097136253 A TW 097136253A TW 97136253 A TW97136253 A TW 97136253A TW I443859 B TWI443859 B TW I443859B
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TW
Taiwan
Prior art keywords
quantum well
layer
semiconductor wafer
well layer
doped
Prior art date
Application number
TW097136253A
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English (en)
Chinese (zh)
Other versions
TW200924245A (en
Inventor
馬修斯彼得
彼得史陶斯
亞歷山大華特
Original Assignee
歐斯朗奧托半導體股份有限公司
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Publication of TW200924245A publication Critical patent/TW200924245A/zh
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Publication of TWI443859B publication Critical patent/TWI443859B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
TW097136253A 2007-09-26 2008-09-22 包含多重量子井結構的光電半導體晶片 TWI443859B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007046027A DE102007046027A1 (de) 2007-09-26 2007-09-26 Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur

Publications (2)

Publication Number Publication Date
TW200924245A TW200924245A (en) 2009-06-01
TWI443859B true TWI443859B (zh) 2014-07-01

Family

ID=40194467

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097136253A TWI443859B (zh) 2007-09-26 2008-09-22 包含多重量子井結構的光電半導體晶片

Country Status (8)

Country Link
US (1) US8173991B2 (enExample)
EP (1) EP2208240B1 (enExample)
JP (1) JP5404628B2 (enExample)
KR (1) KR101488846B1 (enExample)
CN (1) CN101809767B (enExample)
DE (1) DE102007046027A1 (enExample)
TW (1) TWI443859B (enExample)
WO (1) WO2009039830A1 (enExample)

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DE102009060749B4 (de) 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
KR101637596B1 (ko) * 2010-07-09 2016-07-07 엘지이노텍 주식회사 발광소자
JP6005346B2 (ja) * 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
JP6426359B2 (ja) * 2014-03-24 2018-11-21 株式会社東芝 半導体発光素子及びその製造方法
DE102014111058A1 (de) 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
FR3028671B1 (fr) * 2014-11-19 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente a puits quantiques dopes et procede de fabrication associe
JP6188866B2 (ja) * 2016-05-19 2017-08-30 シャープ株式会社 窒化物半導体発光素子の製造方法
DE102016120419A1 (de) 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
KR20200009843A (ko) 2018-07-20 2020-01-30 홍익대학교 산학협력단 광전 소자 및 그 제조 방법
JP2020167321A (ja) * 2019-03-29 2020-10-08 旭化成株式会社 窒化物半導体発光素子
JP7469677B2 (ja) * 2019-11-26 2024-04-17 日亜化学工業株式会社 窒化物半導体素子
CN118782700B (zh) * 2024-09-11 2024-11-22 江西兆驰半导体有限公司 用于Micro-LED的外延片及其制备方法、Micro-LED

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Also Published As

Publication number Publication date
KR101488846B1 (ko) 2015-02-03
TW200924245A (en) 2009-06-01
EP2208240A1 (de) 2010-07-21
CN101809767A (zh) 2010-08-18
US8173991B2 (en) 2012-05-08
KR20100056572A (ko) 2010-05-27
CN101809767B (zh) 2012-06-13
JP5404628B2 (ja) 2014-02-05
US20110042643A1 (en) 2011-02-24
JP2010541223A (ja) 2010-12-24
EP2208240B1 (de) 2018-08-29
WO2009039830A1 (de) 2009-04-02
DE102007046027A1 (de) 2009-04-02

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