DE102009060747B4 - Halbleiterchip - Google Patents

Halbleiterchip Download PDF

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Publication number
DE102009060747B4
DE102009060747B4 DE102009060747.1A DE102009060747A DE102009060747B4 DE 102009060747 B4 DE102009060747 B4 DE 102009060747B4 DE 102009060747 A DE102009060747 A DE 102009060747A DE 102009060747 B4 DE102009060747 B4 DE 102009060747B4
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DE
Germany
Prior art keywords
doping
quantum
multilayer structure
semiconductor
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009060747.1A
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German (de)
English (en)
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DE102009060747A1 (de
Inventor
Dr. Peter Matthias
Tobias Meyer
Alexander Walter
Dr. Taki Tetsuya
Dr. Off Jürgen
Dr. Butendeich Rainer
Dr. Hertkorn Joachim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009060747.1A priority Critical patent/DE102009060747B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to KR1020177017884A priority patent/KR20170080718A/ko
Priority to JP2012546427A priority patent/JP5735984B2/ja
Priority to CN201080060204.4A priority patent/CN102687290B/zh
Priority to TW099146097A priority patent/TWI449212B/zh
Priority to KR1020127020140A priority patent/KR101755586B1/ko
Priority to PCT/EP2010/070761 priority patent/WO2011080249A1/de
Priority to KR1020187018915A priority patent/KR20180078359A/ko
Priority to CN201610643061.9A priority patent/CN106229395B/zh
Priority to EP10798567.3A priority patent/EP2519980B1/de
Priority to US13/518,809 priority patent/US9012885B2/en
Publication of DE102009060747A1 publication Critical patent/DE102009060747A1/de
Priority to US14/662,037 priority patent/US9530931B2/en
Priority to US15/287,140 priority patent/US9799797B2/en
Priority to US15/656,169 priority patent/US10388828B2/en
Application granted granted Critical
Publication of DE102009060747B4 publication Critical patent/DE102009060747B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
DE102009060747.1A 2009-12-30 2009-12-30 Halbleiterchip Active DE102009060747B4 (de)

Priority Applications (14)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
US13/518,809 US9012885B2 (en) 2009-12-30 2010-12-27 Light-emitting semiconductor chip
CN201080060204.4A CN102687290B (zh) 2009-12-30 2010-12-27 发光半导体芯片
TW099146097A TWI449212B (zh) 2009-12-30 2010-12-27 半導體晶片
KR1020127020140A KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip
KR1020187018915A KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
CN201610643061.9A CN106229395B (zh) 2009-12-30 2010-12-27 发光半导体芯片
KR1020177017884A KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
JP2012546427A JP5735984B2 (ja) 2009-12-30 2010-12-27 発光半導体チップ
EP10798567.3A EP2519980B1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip
US14/662,037 US9530931B2 (en) 2009-12-30 2015-03-18 Light-emitting semiconductor chip
US15/287,140 US9799797B2 (en) 2009-12-30 2016-10-06 Light-emitting semiconductor chip
US15/656,169 US10388828B2 (en) 2009-12-30 2017-07-21 Light-emitting semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip

Publications (2)

Publication Number Publication Date
DE102009060747A1 DE102009060747A1 (de) 2011-07-07
DE102009060747B4 true DE102009060747B4 (de) 2025-01-09

Family

ID=43827573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009060747.1A Active DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip

Country Status (8)

Country Link
US (4) US9012885B2 (enExample)
EP (1) EP2519980B1 (enExample)
JP (1) JP5735984B2 (enExample)
KR (3) KR101755586B1 (enExample)
CN (2) CN102687290B (enExample)
DE (1) DE102009060747B4 (enExample)
TW (1) TWI449212B (enExample)
WO (1) WO2011080249A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
US8357924B2 (en) * 2010-01-05 2013-01-22 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
CN109952659B (zh) * 2016-07-28 2022-03-11 亮锐有限责任公司 具有超晶格的ⅲ-p发光器件
DE102016120419A1 (de) 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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DE102008016525A1 (de) 2008-03-31 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen

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Publication number Priority date Publication date Assignee Title
US20040004223A1 (en) 1997-01-09 2004-01-08 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US20070063207A1 (en) 1998-03-12 2007-03-22 Koji Tanizawa Nitride semiconductor device
US20080149918A1 (en) 2004-02-13 2008-06-26 Epivalley Co., Ltd. III-Nitride Compound Semiconductor Light Emitting Device
DE102007022947A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
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DE102007057674A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht
DE102008016525A1 (de) 2008-03-31 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen

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Also Published As

Publication number Publication date
KR101755586B1 (ko) 2017-07-07
TWI449212B (zh) 2014-08-11
DE102009060747A1 (de) 2011-07-07
TW201135968A (en) 2011-10-16
CN102687290B (zh) 2016-08-17
US9799797B2 (en) 2017-10-24
US20170025570A1 (en) 2017-01-26
KR20170080718A (ko) 2017-07-10
WO2011080249A1 (de) 2011-07-07
US10388828B2 (en) 2019-08-20
US20150194570A1 (en) 2015-07-09
US9530931B2 (en) 2016-12-27
EP2519980B1 (de) 2019-04-03
EP2519980A1 (de) 2012-11-07
JP5735984B2 (ja) 2015-06-17
CN106229395B (zh) 2020-08-14
JP2013516751A (ja) 2013-05-13
US9012885B2 (en) 2015-04-21
CN106229395A (zh) 2016-12-14
US20120298964A1 (en) 2012-11-29
KR20120102146A (ko) 2012-09-17
CN102687290A (zh) 2012-09-19
KR20180078359A (ko) 2018-07-09
US20170324001A1 (en) 2017-11-09

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