TWI449212B - 半導體晶片 - Google Patents

半導體晶片 Download PDF

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Publication number
TWI449212B
TWI449212B TW099146097A TW99146097A TWI449212B TW I449212 B TWI449212 B TW I449212B TW 099146097 A TW099146097 A TW 099146097A TW 99146097 A TW99146097 A TW 99146097A TW I449212 B TWI449212 B TW I449212B
Authority
TW
Taiwan
Prior art keywords
doping
quantum
layer
multilayer structure
semiconductor
Prior art date
Application number
TW099146097A
Other languages
English (en)
Chinese (zh)
Other versions
TW201135968A (en
Inventor
Matthias Peter
Tobias Meyer
Alexander Walter
Tetsuya Taki
Juergen Off
Rainer Butendeich
Joachim Hertkorn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW201135968A publication Critical patent/TW201135968A/zh
Application granted granted Critical
Publication of TWI449212B publication Critical patent/TWI449212B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)
TW099146097A 2009-12-30 2010-12-27 半導體晶片 TWI449212B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip

Publications (2)

Publication Number Publication Date
TW201135968A TW201135968A (en) 2011-10-16
TWI449212B true TWI449212B (zh) 2014-08-11

Family

ID=43827573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099146097A TWI449212B (zh) 2009-12-30 2010-12-27 半導體晶片

Country Status (8)

Country Link
US (4) US9012885B2 (enExample)
EP (1) EP2519980B1 (enExample)
JP (1) JP5735984B2 (enExample)
KR (3) KR20180078359A (enExample)
CN (2) CN106229395B (enExample)
DE (1) DE102009060747B4 (enExample)
TW (1) TWI449212B (enExample)
WO (1) WO2011080249A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP5709899B2 (ja) * 2010-01-05 2015-04-30 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード及びその製造方法
DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272A1 (de) 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
CN109952659B (zh) * 2016-07-28 2022-03-11 亮锐有限责任公司 具有超晶格的ⅲ-p发光器件
DE102016120419A1 (de) * 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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US20080149918A1 (en) * 2004-02-13 2008-06-26 Epivalley Co., Ltd. III-Nitride Compound Semiconductor Light Emitting Device
TW200537703A (en) * 2004-05-03 2005-11-16 Osram Opto Semiconductors Gmbh Method to produce a radiation-emitting semiconductor-chip and said produced semiconductor-chip
TW200638563A (en) * 2005-04-29 2006-11-01 Cree Inc Light emitting devices with active layers that extend into opened pits
WO2009072787A2 (en) * 2007-12-05 2009-06-11 Wooree Lst Co., Ltd. Light emitting device using compound semiconductor

Also Published As

Publication number Publication date
US9530931B2 (en) 2016-12-27
KR20170080718A (ko) 2017-07-10
JP5735984B2 (ja) 2015-06-17
US20150194570A1 (en) 2015-07-09
CN106229395B (zh) 2020-08-14
KR20180078359A (ko) 2018-07-09
WO2011080249A1 (de) 2011-07-07
DE102009060747A1 (de) 2011-07-07
JP2013516751A (ja) 2013-05-13
US10388828B2 (en) 2019-08-20
US20170025570A1 (en) 2017-01-26
KR101755586B1 (ko) 2017-07-07
DE102009060747B4 (de) 2025-01-09
CN102687290A (zh) 2012-09-19
US20120298964A1 (en) 2012-11-29
US20170324001A1 (en) 2017-11-09
EP2519980A1 (de) 2012-11-07
CN106229395A (zh) 2016-12-14
US9012885B2 (en) 2015-04-21
TW201135968A (en) 2011-10-16
KR20120102146A (ko) 2012-09-17
CN102687290B (zh) 2016-08-17
EP2519980B1 (de) 2019-04-03
US9799797B2 (en) 2017-10-24

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