CN102687290B - 发光半导体芯片 - Google Patents

发光半导体芯片 Download PDF

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Publication number
CN102687290B
CN102687290B CN201080060204.4A CN201080060204A CN102687290B CN 102687290 B CN102687290 B CN 102687290B CN 201080060204 A CN201080060204 A CN 201080060204A CN 102687290 B CN102687290 B CN 102687290B
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China
Prior art keywords
doping
quantum
multilayer structure
active region
semiconductor chip
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Active
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CN201080060204.4A
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English (en)
Chinese (zh)
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CN102687290A (zh
Inventor
马蒂亚斯·彼得
托比亚斯·迈耶
亚历山大·沃尔特
泷哲也
于尔根·奥弗
赖纳·布滕戴奇
约阿希姆·赫特功
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to CN201610643061.9A priority Critical patent/CN106229395B/zh
Publication of CN102687290A publication Critical patent/CN102687290A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
CN201080060204.4A 2009-12-30 2010-12-27 发光半导体芯片 Active CN102687290B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610643061.9A CN106229395B (zh) 2009-12-30 2010-12-27 发光半导体芯片

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060747.1 2009-12-30
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610643061.9A Division CN106229395B (zh) 2009-12-30 2010-12-27 发光半导体芯片

Publications (2)

Publication Number Publication Date
CN102687290A CN102687290A (zh) 2012-09-19
CN102687290B true CN102687290B (zh) 2016-08-17

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CN201610643061.9A Active CN106229395B (zh) 2009-12-30 2010-12-27 发光半导体芯片

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Country Status (8)

Country Link
US (4) US9012885B2 (enExample)
EP (1) EP2519980B1 (enExample)
JP (1) JP5735984B2 (enExample)
KR (3) KR20180078359A (enExample)
CN (2) CN102687290B (enExample)
DE (1) DE102009060747B4 (enExample)
TW (1) TWI449212B (enExample)
WO (1) WO2011080249A1 (enExample)

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DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP5709899B2 (ja) * 2010-01-05 2015-04-30 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード及びその製造方法
DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) * 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
EP3491676B1 (en) * 2016-07-28 2020-09-30 Lumileds LLC Iii-p light emitting device with a superlattice
DE102016120419B4 (de) 2016-10-26 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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CN1564333A (zh) * 2004-04-01 2005-01-12 光磊科技股份有限公司 一种发光二极管
WO2009045005A2 (en) * 2007-10-02 2009-04-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
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CN101789473A (zh) * 2010-02-23 2010-07-28 厦门大学 一种GaN基垂直结构发光二极管及其制备方法

Also Published As

Publication number Publication date
CN106229395A (zh) 2016-12-14
CN106229395B (zh) 2020-08-14
US20120298964A1 (en) 2012-11-29
TWI449212B (zh) 2014-08-11
US20150194570A1 (en) 2015-07-09
EP2519980A1 (de) 2012-11-07
KR20120102146A (ko) 2012-09-17
JP5735984B2 (ja) 2015-06-17
DE102009060747B4 (de) 2025-01-09
KR20180078359A (ko) 2018-07-09
KR101755586B1 (ko) 2017-07-07
US9012885B2 (en) 2015-04-21
US20170025570A1 (en) 2017-01-26
US10388828B2 (en) 2019-08-20
DE102009060747A1 (de) 2011-07-07
CN102687290A (zh) 2012-09-19
KR20170080718A (ko) 2017-07-10
EP2519980B1 (de) 2019-04-03
US9530931B2 (en) 2016-12-27
US20170324001A1 (en) 2017-11-09
TW201135968A (en) 2011-10-16
JP2013516751A (ja) 2013-05-13
US9799797B2 (en) 2017-10-24
WO2011080249A1 (de) 2011-07-07

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