JP2009526370A5 - - Google Patents

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Publication number
JP2009526370A5
JP2009526370A5 JP2008554349A JP2008554349A JP2009526370A5 JP 2009526370 A5 JP2009526370 A5 JP 2009526370A5 JP 2008554349 A JP2008554349 A JP 2008554349A JP 2008554349 A JP2008554349 A JP 2008554349A JP 2009526370 A5 JP2009526370 A5 JP 2009526370A5
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Japan
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organic material
doped
doped organic
holes
semiconductor nanocrystal
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JP2008554349A
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Japanese (ja)
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JP2009526370A (ja
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Priority claimed from PCT/US2007/003411 external-priority patent/WO2007095061A2/en
Publication of JP2009526370A publication Critical patent/JP2009526370A/ja
Publication of JP2009526370A5 publication Critical patent/JP2009526370A5/ja
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JP2008554349A 2006-02-09 2007-02-08 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法 Pending JP2009526370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77164306P 2006-02-09 2006-02-09
US79542006P 2006-04-27 2006-04-27
PCT/US2007/003411 WO2007095061A2 (en) 2006-02-09 2007-02-08 Device including semiconductor nanocrystals and a layer including a doped organic material and methods

Related Child Applications (1)

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JP2012137755A Division JP2012231154A (ja) 2006-02-09 2012-06-19 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法

Publications (2)

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JP2009526370A JP2009526370A (ja) 2009-07-16
JP2009526370A5 true JP2009526370A5 (enExample) 2012-08-09

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JP2008554349A Pending JP2009526370A (ja) 2006-02-09 2007-02-08 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
JP2012137755A Pending JP2012231154A (ja) 2006-02-09 2012-06-19 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法

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JP2012137755A Pending JP2012231154A (ja) 2006-02-09 2012-06-19 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法

Country Status (5)

Country Link
US (1) US20100132770A1 (enExample)
EP (1) EP1999797A4 (enExample)
JP (2) JP2009526370A (enExample)
KR (1) KR101625224B1 (enExample)
WO (1) WO2007095061A2 (enExample)

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