JP6272030B2 - アクティブマトリクス式希薄ソース使用可能縦型有機発光トランジスタ - Google Patents
アクティブマトリクス式希薄ソース使用可能縦型有機発光トランジスタ Download PDFInfo
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- JP6272030B2 JP6272030B2 JP2013543313A JP2013543313A JP6272030B2 JP 6272030 B2 JP6272030 B2 JP 6272030B2 JP 2013543313 A JP2013543313 A JP 2013543313A JP 2013543313 A JP2013543313 A JP 2013543313A JP 6272030 B2 JP6272030 B2 JP 6272030B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本願は、2010年12月7日に提出された、通し番号61/420,512を有し、「アクティブマトリクス式ナノチューブ使用可能縦型有機発光トランジスタアレイ(ACTIVE MATRIX NANOTUBE ENABLED VERTICAL ORGANIC LIGHT EMITTING TRANSISTOR ARRAY)」と題する同時係属の米国仮特許出願の優先権を主張し、当該出願の全体が参照によって本明細書に組み込まれる。
本発明は、全米科学財団によって授与された合意ECCS−0824157/00069937の下で政府支援によってなされた。政府は本発明において一定の権利を有する。
Claims (10)
- ディスプレイパネルであって
複数のピクセルを含むアレイを含み、前記複数のピクセルの少なくとも1つのピクセルは、
スイッチングトランジスタと、
ドレイン層、ソース層、ゲート電極、前記ソース層及び前記ドレイン層の間に設けられた遷移導電層、及び前記遷移導電層の上に位置付けられ、前記遷移導電層に電気的に接続された少なくとも1つの発光層を有する駆動トランジスタであって、前記ソース層及び前記ゲート電極は前記駆動トランジスタのゲート容量を形成し、前記スイッチングトランジスタに結合され、前記スイッチングトランジスタによる起動に応答して光を発するように構成され、該駆動トランジスタは、前記スイッチングトランジスタに結合される希薄ソース使用縦型有機発光トランジスタ(DS−VOLET)である、駆動トランジスタと、
前記ソース層に結合された少なくとも1つのソース導電線と、
前記遷移導電層及び前記少なくとも1つのソース導電線の間に設けられた層間誘電層と
を含む、ディスプレイパネル。 - 前記ソース層は希薄ソース材料を含み、前記ドレイン層は前記ソース層によって注入されるもう一方の電荷に相補的である電荷を注入するための導体を含み、前記DS−VOLETは、
基板層であって、ゲート電界を提供するために前記ゲート電極が当該基板上に位置付けられるものと、
前記ゲート電極と前記ソース層との間に置かれる誘電体層であって、該誘電体層は前記ゲート電極上に位置付けられる、誘電体層と、
前記ソース層と前記ドレイン層との間に配置される能動層であって、前記電荷は結合して光子を生成し、前記ソース層と該能動層との間の電荷注入はゲート電界によって変調される、能動層と
をさらに含む、請求項1に記載のディスプレイパネル。 - 前記希薄ソース材料は浸透性希薄ネットワークを含む、請求項2に記載のディスプレイパネル。
- 前記希薄ソース材料は穿孔を含むようにパターニングされるグラフェンを含む、請求項2に記載のディスプレイパネル。
- 前記希薄ソース材料はカーボンナノチューブの希薄ネットワークを含む、請求項2に記載のディスプレイパネル。
- 前記スイッチングトランジスタは希薄ソース使用縦型電界効果トランジスタ(DS−VFET)を含む、請求項1に記載のディスプレイパネル。
- 前記DS−VFETのソース層は浸透性希薄ネットワークを含む、請求項6に記載のディスプレイパネル。
- 前記DS−VFETはカーボンナノチューブ使用縦型電界効果トランジスタ(CN−VFET)であり、該CN−VFETの前記ソース層はカーボンナノチューブの希薄ネットワークを含む、請求項7に記載のディスプレイパネル。
- 前記スイッチングトランジスタは、並列に結合される第1のDS−VFETと第2のDS−VFETとを含む二重側方希薄ソース使用縦型電界効果トランジスタ(DS−VFET)を含む、請求項1に記載のディスプレイパネル。
- 前記スイッチングトランジスタは二重反転希薄ソース使用縦型電界効果トランジスタ(DS−VFET)を含む、請求項1に記載のディスプレイパネル。
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PCT/US2011/063745 WO2012078759A2 (en) | 2010-12-07 | 2011-12-07 | Active matrix dilute source enabled vertical organic light emitting transistor |
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EP (1) | EP2649659B1 (ja) |
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KR (1) | KR101943595B1 (ja) |
CN (2) | CN106887449B (ja) |
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BR (1) | BR112013013873A2 (ja) |
CA (1) | CA2820256A1 (ja) |
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