MX2013006233A - Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa. - Google Patents

Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa.

Info

Publication number
MX2013006233A
MX2013006233A MX2013006233A MX2013006233A MX2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A
Authority
MX
Mexico
Prior art keywords
transistor
light emitting
organic light
source enabled
enabled vertical
Prior art date
Application number
MX2013006233A
Other languages
English (en)
Inventor
Andrew Gabriel Rinzler
Mitchell Austin Mccarthy
Bo Liu
Original Assignee
Univ Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Florida filed Critical Univ Florida
Publication of MX2013006233A publication Critical patent/MX2013006233A/es

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Diversas modalidades se proporcionan para transistores emisores de luz orgánicos verticales habilitados por fuente diluida. En diversas modalidades, un panel de exhibición incluye una matriz de píxeles. En una modalidad, entre otras, al menos un píxel incluye un transistor de conmutación y un transistor de impulso acoplado al transistor de conmutación, en dónde el transistor impulsor se configura para emitir luz en respuesta a activación por el transistor de conmutación. El transistor impulsor puede ser un transistor emisor de luz orgánica vertical habilitado por fuente diluida (DS-VOLET = dilute source enabled vertical organic light emitting transistor). El transistor de conmutación puede inlcuir ser un transistor de efecto de campo vertical habilitado por fuente diluida (DS-VFET = dilute source enabled vertical field effect transistor). En otra modalidad, un doble transistor de efecto de campo vertical habilitado por fuente diluido (DS-VFET = double dilute source enabled vertical-field effect transistor) incluye un primer DS-VFET acoplado a un segundo DS-VFET.
MX2013006233A 2010-12-07 2011-12-07 Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa. MX2013006233A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42051210P 2010-12-07 2010-12-07
PCT/US2011/063745 WO2012078759A2 (en) 2010-12-07 2011-12-07 Active matrix dilute source enabled vertical organic light emitting transistor

Publications (1)

Publication Number Publication Date
MX2013006233A true MX2013006233A (es) 2013-08-15

Family

ID=46207712

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013006233A MX2013006233A (es) 2010-12-07 2011-12-07 Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa.

Country Status (12)

Country Link
US (1) US9214644B2 (es)
EP (1) EP2649659B1 (es)
JP (1) JP6272030B2 (es)
KR (1) KR101943595B1 (es)
CN (2) CN103460424B (es)
AU (1) AU2011338460A1 (es)
BR (1) BR112013013873A2 (es)
CA (1) CA2820256A1 (es)
MX (1) MX2013006233A (es)
RU (1) RU2013131102A (es)
SG (1) SG190313A1 (es)
WO (1) WO2012078759A2 (es)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412442B2 (en) * 2012-04-27 2016-08-09 The Board Of Trustees Of The University Of Illinois Methods for forming a nanowire and apparatus thereof
US8901547B2 (en) * 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors
US8653516B1 (en) * 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
TWI569491B (zh) * 2012-10-11 2017-02-01 Joled Inc Organic EL display device and manufacturing method thereof, ink and electronic machine
TWI467301B (zh) * 2012-10-24 2015-01-01 Au Optronics Corp 顯示面板
JP6426102B2 (ja) 2012-11-05 2018-11-21 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッドＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． ディスプレイにおける輝度補償
KR102010113B1 (ko) * 2012-11-30 2019-08-12 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 양극성 수직 전계 효과 트랜지스터
US9373685B2 (en) * 2013-02-15 2016-06-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
KR102081891B1 (ko) * 2013-02-15 2020-02-26 삼성전자주식회사 그래핀 소자 및 이를 포함하는 전자 기기
US8975121B2 (en) * 2013-05-09 2015-03-10 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form thin film nanocrystal integrated circuits on ophthalmic devices
CN104576744A (zh) * 2013-10-24 2015-04-29 中国科学院苏州纳米技术与纳米仿生研究所 碳纳米管薄膜晶体管、amoled像素柔性驱动电路及制作方法
GB201321285D0 (en) 2013-12-03 2014-01-15 Plastic Logic Ltd Pixel driver circuit
IL229837A0 (en) 2013-12-08 2014-03-31 Technion Res & Dev Foundation electronic means
EP3134919B1 (en) * 2014-04-24 2023-07-19 University of Florida Research Foundation, Inc. Tunable barrier transistors for high power electronics
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
EP2978038A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016035413A1 (ja) * 2014-09-04 2016-03-10 株式会社Ｊｏｌｅｄ 表示素子および表示装置ならびに電子機器
US9379166B2 (en) * 2014-11-04 2016-06-28 Atom Nanoelectronics, Inc. Active matrix light emitting diodes display module with carbon nanotubes control circuits and methods of fabrication
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
CN105679949A (zh) * 2014-12-04 2016-06-15 广州华睿光电材料有限公司 有机发光晶体管及其应用
US10483325B2 (en) 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
CN108496240A (zh) 2015-09-11 2018-09-04 佛罗里达大学研究基金会有限公司 垂直场效应晶体管
CN105304830A (zh) * 2015-10-09 2016-02-03 Tcl集团股份有限公司 量子点发光场效应晶体管及其制备方法
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
KR101730902B1 (ko) * 2015-10-19 2017-04-27 서울대학교산학협력단 누설 전류가 저감된 수직형 유기 발광 트랜지스터 및 이의 제조 방법
WO2017112932A1 (en) * 2015-12-23 2017-06-29 University Of Florida Research Foundation, Incorporated Patterning and inverted deposition engineering for solution-processed electrodes and semiconducting films
KR20170129983A (ko) 2016-05-17 2017-11-28 삼성전자주식회사 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법
CN106684251B (zh) * 2016-12-09 2018-06-01 武汉华星光电技术有限公司 柔性垂直沟道有机薄膜晶体管及其制作方法
RU175418U1 (ru) * 2016-12-12 2017-12-04 Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (ФГКУ "В/ч" 68240) Полевой транзистор на углеродной пленке с вертикальным каналом проводимости
CN107170748B (zh) * 2017-04-20 2019-11-08 上海天马微电子有限公司 一种阵列基板、显示面板及显示设备
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108731855B (zh) 2018-05-18 2019-07-26 京东方科技集团股份有限公司 一种压力传感单元及压力传感器、压力传感装置
CN108493229A (zh) * 2018-05-31 2018-09-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
JP7190729B2 (ja) * 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
KR102135503B1 (ko) 2018-09-06 2020-07-17 광운대학교 산학협력단 저차원 전자구조의 물질로 구성되는 전극을 사용하는 유기 트랜지스터 소자와 유기 발광 트랜지스터 소자 및 그 제조방법
CN109036283B (zh) 2018-09-06 2020-06-09 京东方科技集团股份有限公司 有机发光场效应晶体管的驱动电路及驱动方法、显示装置
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
WO2020218421A1 (en) * 2019-04-26 2020-10-29 Jsr Corporation Method of compensating brightness of display and display
KR20220002324A (ko) 2019-04-26 2022-01-06 제이에스알 가부시끼가이샤 발광 디스플레이를 구동하는 방법 및 디스플레이
JP2020183968A (ja) * 2019-04-26 2020-11-12 Jsr株式会社 ディスプレイの輝度補償方法及びディスプレイ
JP2020183971A (ja) * 2019-04-26 2020-11-12 Jsr株式会社 ディスプレイの点灯方法及びディスプレイ
KR20210065586A (ko) 2019-11-27 2021-06-04 삼성전자주식회사 표시 패널 및 표시 장치
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN115053631A (zh) * 2020-02-07 2022-09-13 Jsr株式会社 显示器
CN111863892B (zh) * 2020-07-13 2022-08-23 武汉华星光电半导体显示技术有限公司 显示装置及其制备方法
WO2022039100A1 (en) * 2020-08-21 2022-02-24 Jsr Corporation Display
JP7367635B2 (ja) 2020-08-21 2023-10-24 Jsr株式会社 ディスプレイ
RU204091U1 (ru) * 2020-12-25 2021-05-06 Общество с ограниченной ответственностью "Сенсор Микрон" Полевой транзистор с вертикальным каналом для СВЧ - техники
TW202232461A (zh) 2021-02-03 2022-08-16 日商Ｊｓｒ股份有限公司 顯示器的製造方法及顯示器
CN113345967B (zh) * 2021-05-21 2022-09-09 Tcl华星光电技术有限公司 薄膜晶体管及led背板
US20230403918A1 (en) * 2022-06-09 2023-12-14 Jsr Corporation Method for producing vertical organic light-emitting transistor device, display

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI107109B (fi) 1998-10-21 2001-05-31 Nokia Networks Oy Digitaalinen tietoliikennejärjestelmä
KR100379566B1 (ko) * 2000-08-30 2003-04-10 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP3638922B2 (ja) 2001-07-17 2005-04-13 株式会社半導体エネルギー研究所 発光装置
GB0130321D0 (en) * 2001-12-19 2002-02-06 Avecia Ltd Electronic devices
JP2003330412A (ja) * 2002-05-10 2003-11-19 Canon Inc アクティブマトリックス型ディスプレイ及びスイッチ回路
US7002302B2 (en) * 2002-10-07 2006-02-21 Samsung Sdi Co., Ltd. Flat panel display
JP2005128310A (ja) 2003-10-24 2005-05-19 Seiko Epson Corp 表示装置、及び電子機器
KR100603334B1 (ko) 2004-04-06 2006-07-20 삼성에스디아이 주식회사 능동형 유기 ｅｌ 픽셀
TWI405242B (zh) * 2004-04-28 2013-08-11 Semiconductor Energy Lab 基板上配線，半導體裝置及其製造方法
KR100634543B1 (ko) * 2005-04-16 2006-10-13 삼성전자주식회사 단결정 실리콘 ｔｆｔ 유기발광 디스플레이 및 그 제조방법
US7416924B2 (en) * 2004-11-11 2008-08-26 Samsung Electronics Co., Ltd. Organic light emitting display with single crystalline silicon TFT and method of fabricating the same
KR100712111B1 (ko) * 2004-12-14 2007-04-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
EP1720148A3 (en) * 2005-05-02 2007-09-05 Semiconductor Energy Laboratory Co., Ltd. Display device and gray scale driving method with subframes thereof
JP4808479B2 (ja) * 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809682B2 (ja) * 2006-01-30 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
EP2204074B1 (en) * 2007-09-10 2019-11-06 University of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
TWI425693B (zh) * 2008-03-14 2014-02-01 Univ Nat Chiao Tung Vertical drive and parallel drive organic light emitting crystal structure
TWI642113B (zh) * 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101097454B1 (ko) * 2009-02-16 2011-12-23 네오뷰코오롱 주식회사 Ｏｌｅｄ 패널의 화소 회로, 이를 이용한 표시 장치 및 ｏｌｅｄ 패널의 구동 방법
WO2010135539A1 (en) * 2009-05-20 2010-11-25 The Trustees Of The University Of Pennsylvania Self-adaptive bio-signal and modulation device
CN101615613B (zh) * 2009-08-12 2010-10-06 友达光电股份有限公司 像素结构、有机电激发光显示单元及其制造方法
KR20110058126A (ko) * 2009-11-25 2011-06-01 삼성모바일디스플레이주식회사 유기 발광 표시 장치
RU2012142197A (ru) 2010-03-04 2014-04-10 Юниверсити Оф Флорида Рисерч Фаундейшн, Инк. Полупроводниковые устройства с электроперколяционным слоем истока и способы их изготовления

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CN106887449A (zh) 2017-06-23
US9214644B2 (en) 2015-12-15
EP2649659B1 (en) 2020-05-06
KR20130130011A (ko) 2013-11-29
JP6272030B2 (ja) 2018-01-31
RU2013131102A (ru) 2015-01-20
BR112013013873A2 (pt) 2016-09-13
SG190313A1 (en) 2013-06-28
EP2649659A2 (en) 2013-10-16
WO2012078759A3 (en) 2012-09-27
CA2820256A1 (en) 2012-06-14
CN103460424A (zh) 2013-12-18
KR101943595B1 (ko) 2019-04-17
US20130240842A1 (en) 2013-09-19
CN103460424B (zh) 2016-10-26
JP2014505324A (ja) 2014-02-27
CN106887449B (zh) 2021-11-05
WO2012078759A2 (en) 2012-06-14
EP2649659A4 (en) 2015-01-07
AU2011338460A1 (en) 2013-06-06

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