JP5810103B2 - 電気的浸透性ソース層を含む半導体デバイス及びこれの製造方法 - Google Patents
電気的浸透性ソース層を含む半導体デバイス及びこれの製造方法 Download PDFInfo
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- JP5810103B2 JP5810103B2 JP2012556259A JP2012556259A JP5810103B2 JP 5810103 B2 JP5810103 B2 JP 5810103B2 JP 2012556259 A JP2012556259 A JP 2012556259A JP 2012556259 A JP2012556259 A JP 2012556259A JP 5810103 B2 JP5810103 B2 JP 5810103B2
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- CNWFGQVVWZXHPE-UHFFFAOYSA-N trichloro(18-phenoxyoctadecyl)silane Chemical compound Cl[Si](Cl)(Cl)CCCCCCCCCCCCCCCCCCOC1=CC=CC=C1 CNWFGQVVWZXHPE-UHFFFAOYSA-N 0.000 description 1
- ADBSXCRGUFFLBC-UHFFFAOYSA-N trichloro(docosyl)silane Chemical compound CCCCCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl ADBSXCRGUFFLBC-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本願は、2010年3月4日に出願された「SEMICONDUCTOR DEVICES INCLUDING A NANOTUBE LAYER AND A MEMORY LAYER AND METHODS OF FABRICATING THE SAME」という名称の同時係属中の米国仮特許出願第61/310,342号明細書の優先権を主張し、そのすべてを本明細書に参照として組み入れる。
本発明は、国立科学財団により与えられた助成金第ECCS−0824157/00069937号のもとで政府援助を受けた。政府は本発明に所定の権利を有する。
Claims (10)
- 半導体デバイスであって、
基板上に形成されるゲート層と、
前記ゲート層上に形成される誘電体層と、
前記誘電体層上に形成されるメモリ層と、
前記メモリ層上に形成されるソース層であって、前記ソース層は電気的浸透性であってパーフォレーションを有するソース層と、
前記ソース層上に形成される半導体チャネル層であって、前記半導体チャネル層は前記ソース層及び前記メモリ層と接触し、前記ソース層及び前記半導体チャネル層はゲート電圧チューナブル電荷注入バリアを形成する半導体チャネル層と、
前記半導体チャネル層上に形成されるドレイン層と
を含む半導体デバイス。 - 前記メモリ層は電荷蓄積層である、請求項1に記載の半導体デバイス。
- 前記電荷蓄積層は、前記ソース層と前記電荷蓄積層との間の電荷交換が、ゲート電圧が臨界しきいゲート電圧を超えるときにのみ生じるように構成される、請求項2に記載の半導体デバイス。
- 前記半導体デバイスは、プログラム可能なしきい電圧を有する、ヒステリシスなしのトランジスタとして動作する、請求項3に記載の半導体デバイス。
- 誘電体材料に完全に取り囲まれるフローティングゲートをさらに含む、請求項1に記載の半導体デバイス。
- 前記ソース層は複数カーボンナノチューブのネットワークである、請求項1に記載の半導体デバイス。
- 前記ソース層はグラフェンを含む、請求項1に記載の半導体デバイス。
- 前記ソース層は、金属又は半導体の複数ナノワイヤのネットワークである、請求項1に記載の半導体デバイス。
- 前記半導体チャネル層の伝導バンド縁端又は最低被占軌道準位が、前記ソース層の仕事関数の−1.5eVから+1.5eVの範囲内にある、請求項1に記載の半導体デバイス。
- 前記ドレイン層は少なくとも一つのカーボンナノチューブを含む、請求項1に記載の半導体デバイス。
Applications Claiming Priority (3)
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US31034210P | 2010-03-04 | 2010-03-04 | |
US61/310,342 | 2010-03-04 | ||
PCT/US2011/027155 WO2011109693A2 (en) | 2010-03-04 | 2011-03-04 | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same |
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JP2013521664A JP2013521664A (ja) | 2013-06-10 |
JP2013521664A5 JP2013521664A5 (ja) | 2014-04-03 |
JP5810103B2 true JP5810103B2 (ja) | 2015-11-11 |
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US (1) | US8952361B2 (ja) |
EP (1) | EP2543086B1 (ja) |
JP (1) | JP5810103B2 (ja) |
KR (1) | KR101860958B1 (ja) |
CN (1) | CN102823009B (ja) |
AU (1) | AU2011222601B2 (ja) |
BR (1) | BR112012022290A2 (ja) |
CA (1) | CA2791625A1 (ja) |
RU (1) | RU2012142197A (ja) |
SG (1) | SG183900A1 (ja) |
WO (1) | WO2011109693A2 (ja) |
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CN102823009B (zh) | 2015-09-16 |
EP2543086A4 (en) | 2014-04-23 |
KR20130014527A (ko) | 2013-02-07 |
EP2543086A2 (en) | 2013-01-09 |
AU2011222601A1 (en) | 2012-09-06 |
CN102823009A (zh) | 2012-12-12 |
CA2791625A1 (en) | 2011-09-09 |
WO2011109693A2 (en) | 2011-09-09 |
EP2543086B1 (en) | 2019-06-19 |
JP2013521664A (ja) | 2013-06-10 |
KR101860958B1 (ko) | 2018-05-24 |
RU2012142197A (ru) | 2014-04-10 |
US8952361B2 (en) | 2015-02-10 |
SG183900A1 (en) | 2012-10-30 |
AU2011222601B2 (en) | 2013-09-26 |
US20120319096A1 (en) | 2012-12-20 |
WO2011109693A3 (en) | 2011-12-29 |
BR112012022290A2 (pt) | 2018-05-15 |
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