CN103227204B - 晕掺杂的双材料异质栅石墨烯条带场效应管 - Google Patents
晕掺杂的双材料异质栅石墨烯条带场效应管 Download PDFInfo
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CN201310112320.1A CN103227204B (zh) | 2013-04-01 | 2013-04-01 | 晕掺杂的双材料异质栅石墨烯条带场效应管 |
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CN105577126B (zh) * | 2015-12-15 | 2019-07-02 | 清华大学 | 石墨烯传输线作级间匹配的分布式放大器电路拓扑结构 |
CN108121836B (zh) * | 2016-11-29 | 2020-12-29 | 鸿之微科技(上海)股份有限公司 | 具有局域轨道作用的非平衡态电子结构的计算方法及系统 |
CN109427287B (zh) * | 2017-08-29 | 2020-12-22 | 昆山国显光电有限公司 | 适用于高像素密度的像素驱动电路、像素结构和制作方法 |
CN109037321B (zh) * | 2018-06-22 | 2021-06-01 | 杭州电子科技大学 | 石墨烯条带异质结双栅tfet及其开关特性提升方法 |
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WO2012090973A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN102823009A (zh) * | 2010-03-04 | 2012-12-12 | 佛罗里达大学研究基金会公司 | 包括电渗透源极层的半导体设备及其制造方法 |
KR20130027231A (ko) * | 2011-09-07 | 2013-03-15 | 그래핀스퀘어 주식회사 | 그래핀의 개질 방법, 및 상기를 이용한 소자 |
CN103000498A (zh) * | 2011-09-16 | 2013-03-27 | 中国科学院微电子研究所 | 石墨烯纳米带的制造方法、mosfet及其制造方法 |
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JPS59198716A (ja) * | 1983-04-25 | 1984-11-10 | Seiko Epson Corp | 半導体装置とその製造方法 |
KR20100087915A (ko) * | 2009-01-29 | 2010-08-06 | 삼성전자주식회사 | 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법 |
TWI590335B (zh) * | 2010-08-18 | 2017-07-01 | 半導體能源研究所股份有限公司 | 膜形成設備及膜形成方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102823009A (zh) * | 2010-03-04 | 2012-12-12 | 佛罗里达大学研究基金会公司 | 包括电渗透源极层的半导体设备及其制造方法 |
WO2012090973A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20130027231A (ko) * | 2011-09-07 | 2013-03-15 | 그래핀스퀘어 주식회사 | 그래핀의 개질 방법, 및 상기를 이용한 소자 |
CN103000498A (zh) * | 2011-09-16 | 2013-03-27 | 中国科学院微电子研究所 | 石墨烯纳米带的制造方法、mosfet及其制造方法 |
Non-Patent Citations (2)
Title |
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石墨烯的制备与应用研究进展;魏德英等;《化工新型材料》;20110630;第39 卷(第6 期);第11页-第14页 * |
石墨烯纳米条带的电子输运性质研究;闫帅军等;《固体电子学研究与进展》;20130228;第33卷(第1期);第11页-第16页 * |
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Application publication date: 20130731 Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000211 Denomination of invention: Halo-doped bi-material heterogeneous gate graphene strip field effect transistor Granted publication date: 20150708 License type: Common License Record date: 20161114 |
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