BR112012022290A2 - dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos. - Google Patents

dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos.

Info

Publication number
BR112012022290A2
BR112012022290A2 BR112012022290A BR112012022290A BR112012022290A2 BR 112012022290 A2 BR112012022290 A2 BR 112012022290A2 BR 112012022290 A BR112012022290 A BR 112012022290A BR 112012022290 A BR112012022290 A BR 112012022290A BR 112012022290 A2 BR112012022290 A2 BR 112012022290A2
Authority
BR
Brazil
Prior art keywords
layer
source layer
methods
semiconductor device
fabrication
Prior art date
Application number
BR112012022290A
Other languages
English (en)
Inventor
Gabriel Rinzler Andrew
Liu Bo
Austin Mccarthy Mitchell
Original Assignee
Univ Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Florida filed Critical Univ Florida
Publication of BR112012022290A2 publication Critical patent/BR112012022290A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos. várias modalidades são fornecidas para dispositivos semicondutores, incluindo uma camada de fonte de percolação eletricamente e métodos de fabricar os mesmos em uma modalidade, um dispositivo semicondutor inclui uma camada de porta, uma camada dielétrica, uma camada de memória, uma camada de fonte, uma camada de canal semicondutor, e uma camada de drenagem. a camada de fonte é eletricamente de percolação e perfurada. a camada de canal semicondutor se encontra em contacto com a camada de fonte e a camada de memória. a camada de fonte e a camada de canal semicondutor foram uma barreira de injeção de carga sintonizável de voltagem de porta.
BR112012022290A 2010-03-04 2011-03-04 dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos. BR112012022290A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31034210P 2010-03-04 2010-03-04
PCT/US2011/027155 WO2011109693A2 (en) 2010-03-04 2011-03-04 Semiconductor devices including an electrically percolating source layer and methods of fabricating the same

Publications (1)

Publication Number Publication Date
BR112012022290A2 true BR112012022290A2 (pt) 2018-05-15

Family

ID=44542847

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012022290A BR112012022290A2 (pt) 2010-03-04 2011-03-04 dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos.

Country Status (11)

Country Link
US (1) US8952361B2 (pt)
EP (1) EP2543086B1 (pt)
JP (1) JP5810103B2 (pt)
KR (1) KR101860958B1 (pt)
CN (1) CN102823009B (pt)
AU (1) AU2011222601B2 (pt)
BR (1) BR112012022290A2 (pt)
CA (1) CA2791625A1 (pt)
RU (1) RU2012142197A (pt)
SG (1) SG183900A1 (pt)
WO (1) WO2011109693A2 (pt)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103460424B (zh) 2010-12-07 2016-10-26 佛罗里达大学研究基金会 有源矩阵稀释源极实现垂直有机发光晶体管
CN102646592B (zh) * 2011-05-03 2014-12-03 京东方科技集团股份有限公司 薄膜场效应晶体管器件及其制备方法
US9705032B2 (en) 2011-09-22 2017-07-11 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8791450B2 (en) 2011-09-22 2014-07-29 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
WO2014047647A1 (en) * 2012-09-24 2014-03-27 Wake Forest University Organic thin film transistors and methods of making the same
CN104769661B (zh) 2012-11-05 2017-07-18 佛罗里达大学研究基金会有限公司 显示器中的亮度补偿
CN104919596B (zh) * 2012-11-30 2018-09-04 佛罗里达大学研究基金会有限公司 双极型垂直场效应晶体管
US8941095B2 (en) * 2012-12-06 2015-01-27 Hrl Laboratories, Llc Methods for integrating and forming optically transparent devices on surfaces
CN103227204B (zh) * 2013-04-01 2015-07-08 南京邮电大学 晕掺杂的双材料异质栅石墨烯条带场效应管
KR102116978B1 (ko) * 2013-10-07 2020-05-29 삼성전자 주식회사 그래핀 소자 및 그 제조 방법
KR102065110B1 (ko) * 2013-11-12 2020-02-11 삼성전자주식회사 플렉서블 그래핀 스위칭 소자
EP3134919B1 (en) * 2014-04-24 2023-07-19 University of Florida Research Foundation, Inc. Tunable barrier transistors for high power electronics
CN104062775B (zh) * 2014-06-30 2017-02-15 浙江大学 非挥发性的光学记忆单元
KR102237826B1 (ko) 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
FR3027155B1 (fr) * 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
KR101938934B1 (ko) * 2016-03-02 2019-04-10 광주과학기술원 이득조절이 가능한 그래핀-반도체 쇼트키 접합 광전소자
CN105823972B (zh) * 2016-03-15 2018-07-27 南京邮电大学 一种有机场效应晶体管存储器最小存储深度的计算方法
US20180175209A1 (en) * 2016-12-20 2018-06-21 Globalfoundries Inc. Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereof
CN106953010A (zh) * 2017-03-07 2017-07-14 南京邮电大学 一种基于聚合物掺杂半导体纳米粒子的有机场效应晶体管存储器
US10475514B2 (en) * 2017-05-11 2019-11-12 The Penn State Research Foundation Nonvolatile digital computing with ferroelectric FET
CN108376740B (zh) * 2018-01-18 2022-03-29 上海集成电路研发中心有限公司 复合沟道晶体管及其制备方法
CN110364621B (zh) * 2018-04-11 2023-12-01 清华大学 一种触觉存储电子器件及电子设备
CN109036487B (zh) * 2018-07-20 2021-03-02 福州大学 一种基于短沟道有机晶体管的多级光存储器及其制备方法
CN109192750B (zh) * 2018-07-23 2021-06-22 华南师范大学 低压高速擦写的柔性有机非易失性存储器件及其制备方法
CN109037441B (zh) * 2018-08-01 2022-06-21 苏州大学 半导体电存储材料及其制备的柔性电存储器件及制备方法
CN109037355B (zh) * 2018-08-27 2020-04-10 湘潭大学 一种基于铁电栅调控的肖特基二极管及其制备方法
JP7297280B2 (ja) 2018-08-29 2023-06-26 国立大学法人千葉大学 振動発電器及びエレクトレット
CN110911409B (zh) * 2018-09-18 2022-05-03 联华电子股份有限公司 非挥发性存储器及其形成方法
CN109411543A (zh) * 2018-09-20 2019-03-01 华南理工大学 一种透明薄膜晶体管及其制备方法
KR102111526B1 (ko) * 2018-10-19 2020-06-04 성균관대학교산학협력단 셀렉터 포함 메모리 소자
CN109411605A (zh) * 2018-10-26 2019-03-01 福州大学 一种铁电存储器及其制备方法
CN109755255A (zh) * 2019-01-24 2019-05-14 福州大学 一种金属氧化物存储器及其制备方法
KR20220002324A (ko) 2019-04-26 2022-01-06 제이에스알 가부시끼가이샤 발광 디스플레이를 구동하는 방법 및 디스플레이
CN110818711A (zh) * 2019-11-01 2020-02-21 河北科技大学 一种有机异质结纳米线的制备方法
CN111211222A (zh) * 2020-02-19 2020-05-29 国家纳米科学中心 一种有机薄膜晶体管的用途及基于其的有机薄膜的杨氏模量值评估方法
CN113517403B (zh) * 2021-07-26 2024-02-27 南京信息工程大学滨江学院 一种新型的有机pn异质结液相的生长方法
CN113921616A (zh) * 2021-08-27 2022-01-11 华南师范大学 一种低压驱动喷墨打印柔性突触晶体管及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532235B1 (pt) * 1977-05-18 1980-08-23
US5742075A (en) * 1994-10-07 1998-04-21 Iowa State University Research Foundation, Inc. Amorphous silicon on insulator VLSI circuit structures
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP4247377B2 (ja) * 2001-12-28 2009-04-02 独立行政法人産業技術総合研究所 薄膜トランジスタ及びその製造方法
KR20050061446A (ko) * 2002-08-07 2005-06-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 절연 게이트 트랜지스터, 트랜지스터 장치, 트랜지스터회로 및 트랜지스터 작동 방법
KR100508545B1 (ko) * 2002-12-14 2005-08-17 한국전자통신연구원 수직 구조의 반도체 박막 트랜지스터
US7095075B2 (en) * 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
EP1508926A1 (en) * 2003-08-19 2005-02-23 Hitachi, Ltd. Nanotube transistor device
JP4420692B2 (ja) * 2004-02-10 2010-02-24 シャープ株式会社 メモリ素子の製造方法
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
JP2007109454A (ja) * 2005-10-12 2007-04-26 Toyota Motor Corp リチウム二次電池およびその製造方法
US7439594B2 (en) * 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
KR100680001B1 (ko) * 2006-04-05 2007-02-08 광주과학기술원 고분자 전하 저장층을 이용한 유기 전계효과 트랜지스터기반 비휘발성 유기물 트랜지스터 메모리 및 그 제조방법
US8217386B2 (en) 2006-06-29 2012-07-10 University Of Florida Research Foundation, Inc. Short channel vertical FETs
WO2009036071A2 (en) 2007-09-10 2009-03-19 University Of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
US7993959B2 (en) * 2006-09-14 2011-08-09 The Johns Hopkins University Methods for producing multiple distinct transistors from a single semiconductor
KR100866751B1 (ko) * 2006-12-27 2008-11-03 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치 및 그리프레쉬 방법

Also Published As

Publication number Publication date
CN102823009A (zh) 2012-12-12
US20120319096A1 (en) 2012-12-20
SG183900A1 (en) 2012-10-30
CN102823009B (zh) 2015-09-16
JP2013521664A (ja) 2013-06-10
WO2011109693A2 (en) 2011-09-09
EP2543086A2 (en) 2013-01-09
KR20130014527A (ko) 2013-02-07
CA2791625A1 (en) 2011-09-09
US8952361B2 (en) 2015-02-10
AU2011222601B2 (en) 2013-09-26
WO2011109693A3 (en) 2011-12-29
EP2543086B1 (en) 2019-06-19
AU2011222601A1 (en) 2012-09-06
JP5810103B2 (ja) 2015-11-11
RU2012142197A (ru) 2014-04-10
EP2543086A4 (en) 2014-04-23
KR101860958B1 (ko) 2018-05-24

Similar Documents

Publication Publication Date Title
BR112012022290A2 (pt) dispositivo semicondutores incluindo uma camada de fonte de percolação eletricamente e métodos de fabricação dos mesmos.
SG10201805116YA (en) Semiconductor devices and manufacturing methods thereof
JP2013190804A5 (pt)
WO2014085410A8 (en) Ambipolar vertical field effect transistor
JP2011029635A5 (ja) 半導体装置
EP2930750A3 (en) Antifuse otp memory cell with performance improvement, and manufacturing method and operating method of memory
JP2013239713A5 (pt)
TW200943486A (en) Anti-fuse and method for forming the same, unit cell of non volatile memory device with the same
WO2010065428A3 (en) Mos-gated power devices, methods, and integrated circuits
JP2011216878A5 (ja) 半導体装置
WO2014004770A3 (en) Integrated circuit device featuring an antifuse and method of making same
JP2013084941A5 (ja) 半導体装置
JP2013236068A5 (ja) 半導体装置
JP2013138191A5 (pt)
JP2011181906A5 (ja) 半導体装置
WO2011050115A3 (en) Split gate field effect transistor
JP2012015498A5 (pt)
WO2013049463A3 (en) Double gate ion sensitive field effect transistor
JP2012199528A5 (pt)
GB2518094A (en) Dram with a nanowire access transistor
JP2010258423A5 (ja) 半導体装置
JP2011139052A5 (ja) 半導体装置
JP2013102134A5 (ja) 半導体装置
BR112012019907A2 (pt) transistor, e, método para atuar um dispositivo semicondutor
JP2012256829A5 (ja) 半導体装置

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2472 DE 22-05-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.