JP2009526370A - 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法 - Google Patents

半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法 Download PDF

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JP2009526370A
JP2009526370A JP2008554349A JP2008554349A JP2009526370A JP 2009526370 A JP2009526370 A JP 2009526370A JP 2008554349 A JP2008554349 A JP 2008554349A JP 2008554349 A JP2008554349 A JP 2008554349A JP 2009526370 A JP2009526370 A JP 2009526370A
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doped
organic material
group
compound
doped organic
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JP2009526370A5 (enExample
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ビーテイ，ポール・エイチ・ジエイ
コー−サリバン，セス
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キユーデイー・ビジヨン・インコーポレーテツド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP2008554349A 2006-02-09 2007-02-08 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法 Pending JP2009526370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77164306P 2006-02-09 2006-02-09
US79542006P 2006-04-27 2006-04-27
PCT/US2007/003411 WO2007095061A2 (en) 2006-02-09 2007-02-08 Device including semiconductor nanocrystals and a layer including a doped organic material and methods

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JP2012137755A Division JP2012231154A (ja) 2006-02-09 2012-06-19 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法

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JP2009526370A true JP2009526370A (ja) 2009-07-16
JP2009526370A5 JP2009526370A5 (enExample) 2012-08-09

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JP2012137755A Pending JP2012231154A (ja) 2006-02-09 2012-06-19 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法

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US (1) US20100132770A1 (enExample)
EP (1) EP1999797A4 (enExample)
JP (2) JP2009526370A (enExample)
KR (1) KR101625224B1 (enExample)
WO (1) WO2007095061A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053398A1 (ja) * 2010-10-22 2012-04-26 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子
JP2017168420A (ja) * 2015-09-01 2017-09-21 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器及び照明装置

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2008070028A2 (en) * 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
WO2007117668A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Methods and articles including nanomaterial
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2008105792A2 (en) * 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
JP2010508620A (ja) * 2006-09-12 2010-03-18 キユーデイー・ビジヨン・インコーポレーテツド 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
JP5773646B2 (ja) 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド ナノ材料を被着させることを含む組成物および方法
WO2009099425A2 (en) 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
JP4486701B1 (ja) 2008-11-06 2010-06-23 パナソニック株式会社 窒化物系半導体素子およびその製造方法
EP2430112B1 (en) 2009-04-23 2018-09-12 The University of Chicago Materials and methods for the preparation of nanocomposites
KR101924080B1 (ko) 2009-11-11 2018-11-30 삼성 리서치 아메리카 인코포레이티드 양자점을 포함하는 디바이스
CN102511085A (zh) 2009-12-25 2012-06-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
TW201248894A (en) 2011-05-16 2012-12-01 Qd Vision Inc Device including quantum dots and method for making same
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
US20130240026A1 (en) * 2011-09-02 2013-09-19 The California Institute Of Technology Photovoltaic semiconductive materials
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
US9431621B2 (en) 2012-03-13 2016-08-30 The Regents Of The University Of Michigan Metal oxide charge transport material doped with organic molecules
AU2013365772B2 (en) 2012-12-19 2017-08-10 Basf Se Detector for optically detecting at least one object
JP2016529473A (ja) 2013-06-13 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 少なくとも１つの物体を光学的に検出する検出器
US10353049B2 (en) 2013-06-13 2019-07-16 Basf Se Detector for optically detecting an orientation of at least one object
AU2014310703B2 (en) 2013-08-19 2018-09-27 Basf Se Optical detector
KR101525525B1 (ko) 2014-02-05 2015-06-03 삼성전자주식회사 나노 결정 입자 및 그의 제조 방법
EP3167304A4 (en) 2014-07-08 2018-02-21 Basf Se Detector for determining a position of at least one object
KR102296735B1 (ko) * 2014-08-13 2021-08-31 삼성전자주식회사 포토컨덕터 및 이를 이용한 이미지 센서
DE102014112618B4 (de) * 2014-09-02 2023-09-07 Pictiva Displays International Limited Organisches Licht emittierendes Bauelement
CN106716059B (zh) 2014-09-29 2020-03-13 巴斯夫欧洲公司 用于光学确定至少一个对象的位置的检测器
KR102290310B1 (ko) * 2014-11-14 2021-08-13 삼성전자주식회사 전도성 박막
WO2016092451A1 (en) 2014-12-09 2016-06-16 Basf Se Optical detector
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
EP3325917B1 (en) 2015-07-17 2020-02-26 trinamiX GmbH Detector for optically detecting at least one object
US10412283B2 (en) 2015-09-14 2019-09-10 Trinamix Gmbh Dual aperture 3D camera and method using differing aperture areas
EP3356884B1 (en) 2015-09-29 2023-07-05 Alliance for Sustainable Energy, LLC Energy-harvesting chromogenic devices
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
EP3532796A1 (en) 2016-10-25 2019-09-04 trinamiX GmbH Nfrared optical detector with integrated filter
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
EP4239371A3 (en) 2016-11-17 2023-11-08 trinamiX GmbH Detector for optically detecting at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
EP3585860B1 (en) 2017-02-27 2021-10-20 Alliance for Sustainable Energy, LLC Energy-harvesting chromogenic devices
CN119958702A (zh) 2017-04-20 2025-05-09 特里纳米克斯股份有限公司 光学检测器
WO2018209104A1 (en) * 2017-05-10 2018-11-15 Alliance For Sustainable Energy, Llc Multilayer carbon nanotube film-containing devices
CN110998223B (zh) 2017-06-26 2021-10-29 特里纳米克斯股份有限公司 用于确定至少一个对像的位置的检测器
CN108346750B (zh) * 2017-08-08 2019-07-19 广东聚华印刷显示技术有限公司 电致发光器件及其发光层和应用
EP3511395B1 (en) 2018-01-11 2020-05-13 Samsung Electronics Co., Ltd. Quantum dot and electronic device including the same
US11411053B2 (en) 2019-12-25 2022-08-09 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Color filter structure doped with nanoparticle and OLED display panel
WO2021250773A1 (ja) * 2020-06-09 2021-12-16 シャープ株式会社 発光素子及び表示装置
KR20220162925A (ko) * 2021-06-01 2022-12-09 삼성디스플레이 주식회사 유기 광검출기 및 이를 포함한 전자 장치

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297076A (ja) * 1991-01-31 1992-10-21 Toshiba Corp 有機ｅｌ素子
JPH11504754A (ja) * 1995-11-28 1999-04-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 有機エレクトロルミネセント・デバイスを改良するために使用される有機／無機合金
JP2000196140A (ja) * 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
JP2005502176A (ja) * 2001-09-04 2005-01-20 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 量子ドットを有するエレクトロルミネセント装置
WO2005013337A2 (en) * 2003-03-06 2005-02-10 Rensselaer Polytechnic Institute Rapid generation of nanoparticles from bulk solids at room temperature
JP2005038634A (ja) * 2003-07-16 2005-02-10 Matsushita Electric Ind Co Ltd 電流注入型発光素子
JP2005340195A (ja) * 2004-05-28 2005-12-08 Samsung Electronics Co Ltd ナノ結晶の多層薄膜製造方法およびこれを用いた有機・無機ハイブリッドエレクトロルミネッセンス素子
JP2005353595A (ja) * 2004-06-09 2005-12-22 Samsung Electronics Co Ltd ナノ結晶エレクトロルミネッセンス素子およびその製造方法
JP2006066395A (ja) * 2004-08-25 2006-03-09 Samsung Electronics Co Ltd 半導体ナノ結晶を含有する白色発光有機／無機ハイブリッド電界発光素子
JP2007227355A (ja) * 2005-12-19 2007-09-06 Samsung Electronics Co Ltd ３次元構造の発光素子及びその製造方法

Family Cites Families (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000111B1 (ko) * 1988-11-21 1995-01-09 미쓰이도오아쓰가가꾸 가부시끼가이샤 발광소자(Luminescence element)
AUPM512194A0 (en) * 1994-04-15 1994-05-12 Chulalongkorn University Amorphous semiconductor photocoupler
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
JP2000252077A (ja) * 1999-02-26 2000-09-14 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンス素子
US6797412B1 (en) * 2000-04-11 2004-09-28 University Of Connecticut Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films
DE10058578C2 (de) * 2000-11-20 2002-11-28 Univ Dresden Tech Lichtemittierendes Bauelement mit organischen Schichten
US6576291B2 (en) * 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
JP2002344047A (ja) * 2001-05-18 2002-11-29 Sony Corp レーザー構造体、発光装置、表示装置、光増幅器及びレーザー構造体の製造方法
US6565996B2 (en) * 2001-06-06 2003-05-20 Eastman Kodak Company Organic light-emitting device having a color-neutral dopant in a hole-transport layer and/or in an electron-transport layer
US20030020397A1 (en) * 2001-06-28 2003-01-30 Lite Array Inc. Enhancement of luminance and life in electroluminescent devices
KR20030010508A (ko) * 2001-07-25 2003-02-05 메르크 파텐트 게엠베하 모노-, 올리고- 및 폴리-4-플루오로티오펜 및 전하 이동물질로서의 이들의 용도
ATE409714T1 (de) * 2001-07-25 2008-10-15 Merck Patent Gmbh Mono-, oligo and poly-3-(1,1- difluoroalkyl)thiophene und ihre verwendung als ladungstransportmaterial
US6773949B2 (en) * 2001-07-31 2004-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods
US6710366B1 (en) * 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
JP4268041B2 (ja) * 2001-08-29 2009-05-27 ザ、トラスティーズ オブ プリンストン ユニバーシティ 金属錯体を含むキャリア阻止層を有する有機発光デバイス
DE60204205T2 (de) * 2001-12-10 2006-02-02 Merck Patent Gmbh Oligomere und Polymere enthaltend eine 2,6-azulene Gruppe und ihre Verwendung als Ladungstransport Materialien
DE10215210B4 (de) * 2002-03-28 2006-07-13 Novaled Gmbh Transparentes, thermisch stabiles lichtemittierendes Bauelement mit organischen Schichten
US6951694B2 (en) * 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
EP1493308A4 (en) * 2002-03-29 2009-09-16 Massachusetts Inst Technology ELECTROLUMINESCENT DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTALS
AU2003302316A1 (en) * 2002-08-13 2004-06-30 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
EP1576655B1 (en) * 2002-08-15 2014-05-21 Moungi G. Bawendi Stabilized semiconductor nanocrystals
KR20050052473A (ko) * 2002-08-16 2005-06-02 더 유니버시티 오브 써던 캘리포니아 유기 발광 물질 및 장치
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
JP2004172102A (ja) * 2002-10-29 2004-06-17 Mitsubishi Chemicals Corp 電界発光素子
US7332211B1 (en) * 2002-11-07 2008-02-19 Massachusetts Institute Of Technology Layered materials including nanoparticles
US6858327B2 (en) * 2002-11-08 2005-02-22 Universal Display Corporation Organic light emitting materials and devices
US6982179B2 (en) * 2002-11-15 2006-01-03 University Display Corporation Structure and method of fabricating organic devices
US6872475B2 (en) * 2002-12-03 2005-03-29 Canon Kabushiki Kaisha Binaphthalene derivatives for organic electro-luminescent devices
JP2004253175A (ja) * 2003-02-18 2004-09-09 Mitsubishi Chemicals Corp 電界発光素子
JP2004303592A (ja) * 2003-03-31 2004-10-28 Mitsubishi Chemicals Corp 電界発光素子及び電界発光素子の製造方法
US6841270B2 (en) * 2003-04-17 2005-01-11 Canon Kabushiki Kaisha Organic light-emitting device having pyrylium salt as charge transport material
US7018723B2 (en) * 2003-07-25 2006-03-28 The University Of Southern California Materials and structures for enhancing the performance of organic light emitting devices
DE10338406A1 (de) * 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10339772B4 (de) * 2003-08-27 2006-07-13 Novaled Gmbh Licht emittierendes Bauelement und Verfahren zu seiner Herstellung
JP4637472B2 (ja) * 2003-11-14 2011-02-23 株式会社半導体エネルギー研究所 発光装置の作製方法
FR2862955B1 (fr) * 2003-12-02 2006-03-10 Commissariat Energie Atomique Nanocristaux inorganiques a couche de revetement organique, leur procede de preparation, et materiaux constitues par ceux-ci.
US7605534B2 (en) * 2003-12-02 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element having metal oxide and light-emitting device using the same
DE10357044A1 (de) * 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004002587B4 (de) * 2004-01-16 2006-06-01 Novaled Gmbh Bildelement für eine Aktiv-Matrix-Anzeige
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
US7193291B2 (en) * 2004-03-25 2007-03-20 3M Innovative Properties Company Organic Schottky diode
US20050230673A1 (en) * 2004-03-25 2005-10-20 Mueller Alexander H Colloidal quantum dot light emitting diodes
JP4393249B2 (ja) * 2004-03-31 2010-01-06 株式会社 日立ディスプレイズ 有機発光素子，画像表示装置、及びその製造方法
WO2005101530A1 (en) * 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
JP2005322464A (ja) * 2004-05-07 2005-11-17 Canon Inc 有機ｅｌ素子
US20050275056A1 (en) * 2004-05-26 2005-12-15 Stephen Forrest Organic heterojunction bipolar transistor
US7126267B2 (en) * 2004-05-28 2006-10-24 Eastman Kodak Company Tandem OLED having stable intermediate connectors
US7777128B2 (en) * 2004-06-01 2010-08-17 Konarka Technologies, Inc. Photovoltaic module architecture
US7540978B2 (en) * 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
US7316967B2 (en) * 2004-09-24 2008-01-08 Massachusetts Institute Of Technology Flow method and reactor for manufacturing noncrystals
DE602004006275T2 (de) * 2004-10-07 2007-12-20 Novaled Ag Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium
US20060196375A1 (en) * 2004-10-22 2006-09-07 Seth Coe-Sullivan Method and system for transferring a patterned material
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
CN101213681A (zh) * 2005-02-16 2008-07-02 麻省理工学院 含有半导体纳米晶体的发光器件
US8718437B2 (en) * 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007103310A2 (en) * 2006-03-07 2007-09-13 Qd Vision, Inc. An article including semiconductor nanocrystals
GB2428955A (en) * 2005-06-08 2007-02-14 Tekgenuity Ltd Plant watering system
US20070001581A1 (en) * 2005-06-29 2007-01-04 Stasiak James W Nanostructure based light emitting devices and associated methods
US7615800B2 (en) * 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer
EP1786050B1 (de) * 2005-11-10 2010-06-23 Novaled AG Dotiertes organisches Halbleitermaterial
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
JP2009527099A (ja) * 2006-02-14 2009-07-23 マサチューセッツ・インスティテュート・オブ・テクノロジー 白色発光デバイス
WO2008070028A2 (en) * 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
WO2007117668A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2007120877A2 (en) * 2006-04-14 2007-10-25 Qd Vision, Inc. Transfer surface for manufacturing a light emitting device
EP2024785B1 (en) * 2006-05-21 2017-02-08 Massachusetts Institute of Technology Optical structures including nanocrystals
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US20080001538A1 (en) * 2006-06-29 2008-01-03 Cok Ronald S Led device having improved light output
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
WO2008021962A2 (en) * 2006-08-11 2008-02-21 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystals and devices
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
US20080172197A1 (en) * 2007-01-11 2008-07-17 Motorola, Inc. Single laser multi-color projection display with quantum dot screen
US8836212B2 (en) * 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US7494903B2 (en) * 2007-01-29 2009-02-24 Eastman Kodak Company Doped nanoparticle semiconductor charge transport layer
US8409473B2 (en) * 2007-01-30 2013-04-02 Evident Technologies, Inc. Group II alloyed I-III-VI semiconductor nanocrystal compositions and methods of making same
US20080204366A1 (en) * 2007-02-26 2008-08-28 Kane Paul J Broad color gamut display
US20080203899A1 (en) * 2007-02-28 2008-08-28 Miller Michael E Electro-luminescent display with improved efficiency
US7781957B2 (en) * 2007-02-28 2010-08-24 Eastman Kodak Company Electro-luminescent device with improved efficiency
US7888700B2 (en) * 2007-03-08 2011-02-15 Eastman Kodak Company Quantum dot light emitting device
US8264777B2 (en) * 2007-06-26 2012-09-11 Qd Vision, Inc. Portable electronic device having an electro wetting display illuminated by quantum dots
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US9136498B2 (en) * 2007-06-27 2015-09-15 Qd Vision, Inc. Apparatus and method for modulating photon output of a quantum dot light emitting device
US20090001403A1 (en) * 2007-06-29 2009-01-01 Motorola, Inc. Inductively excited quantum dot light emitting device
US7989153B2 (en) * 2007-07-11 2011-08-02 Qd Vision, Inc. Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites
US7838889B2 (en) * 2007-08-10 2010-11-23 Eastman Kodak Company Solid-state area illumination system
US8128249B2 (en) * 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
JP2009087782A (ja) * 2007-09-28 2009-04-23 Dainippon Printing Co Ltd エレクトロルミネッセンス素子の製造方法
US8193018B2 (en) * 2008-01-10 2012-06-05 Global Oled Technology Llc Patterning method for light-emitting devices
WO2009099425A2 (en) * 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
WO2009145813A1 (en) * 2008-03-04 2009-12-03 Qd Vision, Inc. Particles including nanoparticles, uses thereof, and methods
KR101995371B1 (ko) * 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297076A (ja) * 1991-01-31 1992-10-21 Toshiba Corp 有機ｅｌ素子
JPH11504754A (ja) * 1995-11-28 1999-04-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 有機エレクトロルミネセント・デバイスを改良するために使用される有機／無機合金
JP2000196140A (ja) * 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
JP2005502176A (ja) * 2001-09-04 2005-01-20 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 量子ドットを有するエレクトロルミネセント装置
WO2005013337A2 (en) * 2003-03-06 2005-02-10 Rensselaer Polytechnic Institute Rapid generation of nanoparticles from bulk solids at room temperature
JP2005038634A (ja) * 2003-07-16 2005-02-10 Matsushita Electric Ind Co Ltd 電流注入型発光素子
JP2005340195A (ja) * 2004-05-28 2005-12-08 Samsung Electronics Co Ltd ナノ結晶の多層薄膜製造方法およびこれを用いた有機・無機ハイブリッドエレクトロルミネッセンス素子
JP2005353595A (ja) * 2004-06-09 2005-12-22 Samsung Electronics Co Ltd ナノ結晶エレクトロルミネッセンス素子およびその製造方法
JP2006066395A (ja) * 2004-08-25 2006-03-09 Samsung Electronics Co Ltd 半導体ナノ結晶を含有する白色発光有機／無機ハイブリッド電界発光素子
JP2007227355A (ja) * 2005-12-19 2007-09-06 Samsung Electronics Co Ltd ３次元構造の発光素子及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053398A1 (ja) * 2010-10-22 2012-04-26 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子
JPWO2012053398A1 (ja) * 2010-10-22 2014-02-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子
US8759826B2 (en) 2010-10-22 2014-06-24 Konica Minolta, Inc. Organic electroluminescent element
JP2017168420A (ja) * 2015-09-01 2017-09-21 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器及び照明装置

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