JP2017503333A5 - - Google Patents
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- Publication number
- JP2017503333A5 JP2017503333A5 JP2016526939A JP2016526939A JP2017503333A5 JP 2017503333 A5 JP2017503333 A5 JP 2017503333A5 JP 2016526939 A JP2016526939 A JP 2016526939A JP 2016526939 A JP2016526939 A JP 2016526939A JP 2017503333 A5 JP2017503333 A5 JP 2017503333A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- shell
- indium
- peaks
- nanowire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 152
- 229910052738 indium Inorganic materials 0.000 claims 94
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 94
- 239000002070 nanowire Substances 0.000 claims 78
- 238000000034 method Methods 0.000 claims 23
- 229910002601 GaN Inorganic materials 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 20
- 230000004888 barrier function Effects 0.000 claims 8
- 238000000926 separation method Methods 0.000 claims 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 229910002704 AlGaN Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000011065 in-situ storage Methods 0.000 claims 2
- 239000002105 nanoparticle Substances 0.000 claims 1
- 238000001338 self-assembly Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361917046P | 2013-12-17 | 2013-12-17 | |
| US61/917,046 | 2013-12-17 | ||
| PCT/US2014/070347 WO2015095049A1 (en) | 2013-12-17 | 2014-12-15 | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017503333A JP2017503333A (ja) | 2017-01-26 |
| JP2017503333A5 true JP2017503333A5 (enExample) | 2017-12-28 |
| JP6409063B2 JP6409063B2 (ja) | 2018-10-17 |
Family
ID=53403568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016526939A Active JP6409063B2 (ja) | 2013-12-17 | 2014-12-15 | 歪み修正面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄ及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9281442B2 (enExample) |
| EP (1) | EP3084847B1 (enExample) |
| JP (1) | JP6409063B2 (enExample) |
| TW (1) | TWI621278B (enExample) |
| WO (1) | WO2015095049A1 (enExample) |
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| WO2010014032A1 (en) | 2008-07-07 | 2010-02-04 | Glo Ab | A nanostructured LED |
| WO2015095049A1 (en) | 2013-12-17 | 2015-06-25 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| WO2016022824A1 (en) | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
| WO2016025325A1 (en) | 2014-08-12 | 2016-02-18 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| WO2016049507A1 (en) | 2014-09-26 | 2016-03-31 | Glo Ab | Monolithic image chip for near-to-eye display |
| US10290767B2 (en) * | 2015-06-09 | 2019-05-14 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency visible and ultraviolet nanowire emitters |
| US11322652B2 (en) | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
| US10600354B2 (en) | 2016-04-22 | 2020-03-24 | Glo Ab | Small pitch direct view display and method of making thereof |
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| US10096469B2 (en) * | 2016-08-24 | 2018-10-09 | COMSATS Institute of Information Technology (CIIT) | Sn doped ZnS nanowires for white light source material |
| JP6662464B2 (ja) * | 2016-09-29 | 2020-03-11 | 日亜化学工業株式会社 | 発光素子 |
| US10361341B2 (en) | 2016-10-24 | 2019-07-23 | Glo Ab | Indium gallium nitride red light emitting diode and method of making thereof |
| EP3566251B1 (en) | 2017-01-09 | 2024-08-14 | Nanosys, Inc. | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
| US10998465B2 (en) | 2017-01-09 | 2021-05-04 | Glo Ab | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
| US20180277713A1 (en) * | 2017-03-21 | 2018-09-27 | Glo Ab | Red light emitting diodes having an indium gallium nitride template layer and method of making thereof |
| JP7147132B2 (ja) * | 2017-05-31 | 2022-10-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| WO2019036439A1 (en) | 2017-08-15 | 2019-02-21 | Glo Ab | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE EMPLOYING NANO-PRINT LITHOGRAPHY FOR FORMING SELECTIVE GROWTH MASK |
| US10439101B2 (en) * | 2017-08-18 | 2019-10-08 | Intel Corporation | Micro light-emitting diode (LED) elements and display |
| WO2019055271A1 (en) | 2017-09-15 | 2019-03-21 | Glo Ab | OPTICAL EXTENSION IMPROVEMENT OF LIGHT-EMITTING DIODE SUB-PIXELS |
| US11362238B2 (en) | 2017-10-06 | 2022-06-14 | Nanosys, Inc. | Light emitting diode containing oxidized metal contacts |
| US10804436B2 (en) | 2017-10-06 | 2020-10-13 | Glo Ab | Light emitting diode containing oxidized metal contacts |
| FR3076399B1 (fr) * | 2017-12-28 | 2020-01-24 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
| US10627673B2 (en) | 2018-04-06 | 2020-04-21 | Glo Ab | Light emitting diode array containing a multilayer bus electrode and method of making the same |
| US11257983B2 (en) | 2018-04-11 | 2022-02-22 | Nanosys, Inc. | Light emitting diodes formed on nanodisk substrates and methods of making the same |
| US11069837B2 (en) | 2018-04-20 | 2021-07-20 | Glo Ab | Sub pixel light emitting diodes for direct view display and methods of making the same |
| US10770620B2 (en) | 2018-06-14 | 2020-09-08 | Glo Ab | Epitaxial gallium nitride based light emitting diode and method of making thereof |
| US11239212B2 (en) | 2018-08-24 | 2022-02-01 | Nanosys, Inc. | Light emitting diode array containing a black matrix and an optical bonding layer and method of making the same |
| US11264539B2 (en) | 2018-12-03 | 2022-03-01 | Nanosys, Inc. | Light emitting diodes containing deactivated regions and methods of making the same |
| US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
| US11444065B2 (en) | 2019-05-30 | 2022-09-13 | Nanosys, Inc. | Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same |
| FR3098012B1 (fr) * | 2019-06-25 | 2023-01-13 | Aledia | Procédé d'homogénéisation de la section de nanofils pour diodes électroluminescentes |
| FR3098992B1 (fr) * | 2019-07-18 | 2023-01-13 | Aledia | Diode électroluminescente et procédé de fabrication |
| GB2586862B (en) | 2019-09-06 | 2021-12-15 | Plessey Semiconductors Ltd | LED precursor incorporating strain relaxing structure |
| US11462659B2 (en) * | 2019-09-10 | 2022-10-04 | Koito Manufacturing Co., Ltd. | Semiconductor light emitting device and manufacturing method of semiconductor light emitting device |
| US11594663B2 (en) | 2019-12-20 | 2023-02-28 | Nanosys, Inc. | Light emitting diode device containing a micro lens array and method of making the same |
| US11798988B2 (en) | 2020-01-08 | 2023-10-24 | Microsoft Technology Licensing, Llc | Graded planar buffer for nanowires |
| US12074251B2 (en) | 2020-04-30 | 2024-08-27 | Samsung Electronics Co., Ltd. | Semiconductor device containing stress relaxation layer and method of making thereof |
| JP7611271B2 (ja) | 2020-05-18 | 2025-01-09 | 三星電子株式会社 | 直視型ディスプレイのためのサブピクセル発光ダイオードおよびその製造方法 |
| US11488822B2 (en) | 2020-05-29 | 2022-11-01 | Microsoft Technology Licensing, Llc | SAG nanowire growth with ion implantation |
| US11929253B2 (en) * | 2020-05-29 | 2024-03-12 | Microsoft Technology Licensing, Llc | SAG nanowire growth with a planarization process |
| JP7176700B2 (ja) * | 2020-07-31 | 2022-11-22 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
| JP7520305B2 (ja) * | 2020-08-31 | 2024-07-23 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
| WO2022150162A1 (en) | 2021-01-08 | 2022-07-14 | Nanosys, Inc. | Light-emitting diode device containing microlenses and method of making the same |
| CN114122204B (zh) * | 2021-11-26 | 2024-03-12 | 江苏第三代半导体研究院有限公司 | 一种半导体外延片及其制备方法与应用 |
| US20230369535A1 (en) * | 2022-05-10 | 2023-11-16 | Meta Platforms Technologies, Llc | Nanowire architecture for micro-displays |
| CN115995515A (zh) * | 2023-01-09 | 2023-04-21 | 纳微朗科技(深圳)有限公司 | 一种外延片 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3282174B2 (ja) | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP4158519B2 (ja) * | 2002-12-26 | 2008-10-01 | 住友電気工業株式会社 | 白色発光素子およびその製造方法 |
| US7968359B2 (en) | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
| US20140012224A1 (en) * | 2006-04-07 | 2014-01-09 | The Regents Of The University Of California | Targeted hollow gold nanostructures and methods of use |
| EP2126986B1 (en) * | 2006-12-22 | 2019-09-18 | QuNano AB | Led with upstanding nanowire structure and method of producing such |
| AU2008203934C1 (en) | 2007-01-12 | 2014-03-13 | Qunano Ab | Nitride nanowires and method of producing such |
| US8188513B2 (en) | 2007-10-04 | 2012-05-29 | Stc.Unm | Nanowire and larger GaN based HEMTS |
| JP2009105088A (ja) * | 2007-10-19 | 2009-05-14 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| SE533090C2 (sv) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostrukturerad ljusdiod |
| US8932940B2 (en) * | 2008-10-28 | 2015-01-13 | The Regents Of The University Of California | Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication |
| KR101549620B1 (ko) * | 2009-01-30 | 2015-09-02 | 삼성전자주식회사 | ｐｎ 구조를 지닌 Ｚｎ 산화물 나노 와이어 및 그 제조 방법 |
| KR20110064702A (ko) * | 2009-12-08 | 2011-06-15 | 삼성전자주식회사 | 요철 구조를 지닌 코어-쉘 나노 와이어 및 이를 이용한 열전 소자 |
| US9112240B2 (en) * | 2010-01-04 | 2015-08-18 | Nanotek Instruments, Inc. | Lithium metal-sulfur and lithium ion-sulfur secondary batteries containing a nano-structured cathode and processes for producing same |
| JP5743353B2 (ja) * | 2010-04-02 | 2015-07-01 | インテル・コーポレーション | 電荷蓄積デバイス、電荷蓄積デバイスを製造する方法、移動型電子デバイスおよびマイクロ電子デバイス |
| KR20130136906A (ko) * | 2010-06-18 | 2013-12-13 | 글로 에이비 | 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법 |
| US9947829B2 (en) * | 2010-06-24 | 2018-04-17 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
| KR20120052651A (ko) | 2010-11-16 | 2012-05-24 | 삼성엘이디 주식회사 | 나노로드 발광소자 |
| KR20120059064A (ko) | 2010-11-30 | 2012-06-08 | 삼성엘이디 주식회사 | 발광소자 및 그 제조방법 |
| JP5409707B2 (ja) * | 2011-06-15 | 2014-02-05 | シャープ株式会社 | 半導体素子、半導体素子の製造方法、発光ダイオード、光電変換素子、太陽電池、照明装置、バックライトおよび表示装置 |
| US8937297B2 (en) * | 2011-12-02 | 2015-01-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optoelectronic device including nanowires with a core/shell structure |
| TW201511357A (zh) | 2013-06-07 | 2015-03-16 | Glo Ab | 多色ｌｅｄ及其製造方法 |
| WO2015095049A1 (en) | 2013-12-17 | 2015-06-25 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
-
2014
- 2014-12-15 WO PCT/US2014/070347 patent/WO2015095049A1/en not_active Ceased
- 2014-12-15 TW TW103143715A patent/TWI621278B/zh not_active IP Right Cessation
- 2014-12-15 EP EP14872419.8A patent/EP3084847B1/en active Active
- 2014-12-15 US US14/570,521 patent/US9281442B2/en active Active
- 2014-12-15 JP JP2016526939A patent/JP6409063B2/ja active Active
-
2016
- 2016-03-04 US US15/060,950 patent/US9761757B2/en active Active
-
2017
- 2017-08-14 US US15/676,654 patent/US10026866B2/en active Active
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