TWI621278B - 具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法 - Google Patents
具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法 Download PDFInfo
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- TWI621278B TWI621278B TW103143715A TW103143715A TWI621278B TW I621278 B TWI621278 B TW I621278B TW 103143715 A TW103143715 A TW 103143715A TW 103143715 A TW103143715 A TW 103143715A TW I621278 B TWI621278 B TW I621278B
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- indium
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- 239000002070 nanowire Substances 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 150000004767 nitrides Chemical class 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 179
- 229910052738 indium Inorganic materials 0.000 claims abstract description 163
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 162
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 229910002704 AlGaN Inorganic materials 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 235000012149 noodles Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 125000006850 spacer group Chemical group 0.000 claims 6
- 239000010410 layer Substances 0.000 description 49
- 230000007547 defect Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- -1 GaN Chemical class 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361917046P | 2013-12-17 | 2013-12-17 | |
| US61/917,046 | 2013-12-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201530807A TW201530807A (zh) | 2015-08-01 |
| TWI621278B true TWI621278B (zh) | 2018-04-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103143715A TWI621278B (zh) | 2013-12-17 | 2014-12-15 | 具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9281442B2 (enExample) |
| EP (1) | EP3084847B1 (enExample) |
| JP (1) | JP6409063B2 (enExample) |
| TW (1) | TWI621278B (enExample) |
| WO (1) | WO2015095049A1 (enExample) |
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| CN102089893B (zh) | 2008-07-07 | 2013-02-06 | 格罗有限公司 | 纳米结构led |
| JP6409063B2 (ja) | 2013-12-17 | 2018-10-17 | グロ アーベーＧｌｏ Ａｂ | 歪み修正面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄ及びその製造方法 |
| WO2016022824A1 (en) | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
| CN107251239B (zh) * | 2014-08-12 | 2019-06-28 | Glo公司 | 具有应变改性表面有源区域的iii价氮化物纳米线和其制造方法 |
| US9620559B2 (en) | 2014-09-26 | 2017-04-11 | Glo Ab | Monolithic image chip for near-to-eye display |
| US10290767B2 (en) | 2015-06-09 | 2019-05-14 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency visible and ultraviolet nanowire emitters |
| US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
| KR20180128464A (ko) | 2016-04-22 | 2018-12-03 | 글로 에이비 | 소형 피치 직시형 디스플레이 및 이의 제조 방법 |
| JP7154133B2 (ja) | 2016-05-04 | 2022-10-17 | ナノシス， インコーポレイテッド | 異なる色のｌｅｄを含むモノリシックマルチカラー直視型ディスプレイおよびそれを製造する方法 |
| US10096469B2 (en) * | 2016-08-24 | 2018-10-09 | COMSATS Institute of Information Technology (CIIT) | Sn doped ZnS nanowires for white light source material |
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| US10998465B2 (en) | 2017-01-09 | 2021-05-04 | Glo Ab | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
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| JP7147132B2 (ja) * | 2017-05-31 | 2022-10-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| WO2019036439A1 (en) | 2017-08-15 | 2019-02-21 | Glo Ab | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE EMPLOYING NANO-PRINT LITHOGRAPHY FOR FORMING SELECTIVE GROWTH MASK |
| US10439101B2 (en) * | 2017-08-18 | 2019-10-08 | Intel Corporation | Micro light-emitting diode (LED) elements and display |
| WO2019055271A1 (en) | 2017-09-15 | 2019-03-21 | Glo Ab | OPTICAL EXTENSION IMPROVEMENT OF LIGHT-EMITTING DIODE SUB-PIXELS |
| WO2019071160A1 (en) | 2017-10-06 | 2019-04-11 | Glo Ab | LIGHT-EMITTING DIODE CONTAINING OXIDIZED METAL CONTACTS |
| US11362238B2 (en) | 2017-10-06 | 2022-06-14 | Nanosys, Inc. | Light emitting diode containing oxidized metal contacts |
| FR3076399B1 (fr) * | 2017-12-28 | 2020-01-24 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
| US10627673B2 (en) | 2018-04-06 | 2020-04-21 | Glo Ab | Light emitting diode array containing a multilayer bus electrode and method of making the same |
| US11257983B2 (en) | 2018-04-11 | 2022-02-22 | Nanosys, Inc. | Light emitting diodes formed on nanodisk substrates and methods of making the same |
| TWI828679B (zh) | 2018-04-20 | 2024-01-11 | 美商納諾西斯有限公司 | 用於直視型顯示器之子像素發光二極體及其製造方法 |
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| US9281442B2 (en) | 2016-03-08 |
| TW201530807A (zh) | 2015-08-01 |
| WO2015095049A1 (en) | 2015-06-25 |
| EP3084847B1 (en) | 2018-02-14 |
| US10026866B2 (en) | 2018-07-17 |
| US20150207028A1 (en) | 2015-07-23 |
| US20160260866A1 (en) | 2016-09-08 |
| JP6409063B2 (ja) | 2018-10-17 |
| EP3084847A1 (en) | 2016-10-26 |
| EP3084847A4 (en) | 2017-05-31 |
| US20170345969A1 (en) | 2017-11-30 |
| US9761757B2 (en) | 2017-09-12 |
| JP2017503333A (ja) | 2017-01-26 |
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