FR3076399B1 - Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles - Google Patents

Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles Download PDF

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Publication number
FR3076399B1
FR3076399B1 FR1763316A FR1763316A FR3076399B1 FR 3076399 B1 FR3076399 B1 FR 3076399B1 FR 1763316 A FR1763316 A FR 1763316A FR 1763316 A FR1763316 A FR 1763316A FR 3076399 B1 FR3076399 B1 FR 3076399B1
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FR
France
Prior art keywords
layer
chemical
optoelectronic device
light emitting
emitting diodes
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Active
Application number
FR1763316A
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English (en)
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FR3076399A1 (fr
Inventor
Pierre Tchoulfian
Benoit Amstatt
Philippe Gilet
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Aledia
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Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1763316A priority Critical patent/FR3076399B1/fr
Application filed by Aledia filed Critical Aledia
Priority to PCT/EP2018/083890 priority patent/WO2019129473A1/fr
Priority to JP2020536272A priority patent/JP2021508951A/ja
Priority to CN201880090490.5A priority patent/CN111788701A/zh
Priority to EP18811318.7A priority patent/EP3732735A1/fr
Priority to US16/958,130 priority patent/US11563147B2/en
Priority to KR1020207020756A priority patent/KR102572289B1/ko
Priority to TW107144095A priority patent/TWI805657B/zh
Publication of FR3076399A1 publication Critical patent/FR3076399A1/fr
Application granted granted Critical
Publication of FR3076399B1 publication Critical patent/FR3076399B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif optoélectronique (10) comprenant : un élément semiconducteur tridimensionnel (20), composé majoritairement d'un premier élément chimique et d'un deuxième élément chimique ; une zone active (24) recouvrant au moins partiellement les parois latérales de l'élément semiconducteur tridimensionnel (20) et comprenant un empilement d'au moins une première couche composée majoritairement des premier et deuxième éléments chimiques, et d'au moins une deuxième couche composée majoritairement des premier et deuxième éléments chimiques et d'un troisième élément chimique ; une troisième couche (26) recouvrant la zone active, la troisième couche étant composée majoritairement des premier, deuxième et troisième éléments chimiques et d'un quatrième élément chimique, la proportion massique des troisième et quatrième éléments chimiques de la troisième couche augmentant ou diminuant lorsque la distance au substrat (12) augmente ; et une quatrième couche (28), composée majoritairement des premier et deuxième éléments chimiques, recouvrant la troisième couche (26).
FR1763316A 2017-12-28 2017-12-28 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles Active FR3076399B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1763316A FR3076399B1 (fr) 2017-12-28 2017-12-28 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
JP2020536272A JP2021508951A (ja) 2017-12-28 2018-12-06 三次元発光ダイオードを備えた光電子デバイス
CN201880090490.5A CN111788701A (zh) 2017-12-28 2018-12-06 包含三维发光二极管的光电设备
EP18811318.7A EP3732735A1 (fr) 2017-12-28 2018-12-06 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
PCT/EP2018/083890 WO2019129473A1 (fr) 2017-12-28 2018-12-06 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
US16/958,130 US11563147B2 (en) 2017-12-28 2018-12-06 Optoelectronic device comprising three-dimensional light-emitting diodes
KR1020207020756A KR102572289B1 (ko) 2017-12-28 2018-12-06 3차원 발광 다이오드를 갖는 광전자 장치
TW107144095A TWI805657B (zh) 2017-12-28 2018-12-07 包含三維發光二極體之光電裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1763316A FR3076399B1 (fr) 2017-12-28 2017-12-28 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
FR1763316 2017-12-28

Publications (2)

Publication Number Publication Date
FR3076399A1 FR3076399A1 (fr) 2019-07-05
FR3076399B1 true FR3076399B1 (fr) 2020-01-24

Family

ID=62017441

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1763316A Active FR3076399B1 (fr) 2017-12-28 2017-12-28 Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles

Country Status (8)

Country Link
US (1) US11563147B2 (fr)
EP (1) EP3732735A1 (fr)
JP (1) JP2021508951A (fr)
KR (1) KR102572289B1 (fr)
CN (1) CN111788701A (fr)
FR (1) FR3076399B1 (fr)
TW (1) TWI805657B (fr)
WO (1) WO2019129473A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3096509B1 (fr) * 2019-05-20 2021-05-28 Aledia Dispositif optoelectronique avec diodes electroluminescentes dont une zone dopee integre une portion externe a base d’aluminium et de nitrure de galium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
KR101650720B1 (ko) * 2010-08-04 2016-09-06 삼성전자주식회사 나노로드 기반의 반도체 발광 소자 및 그 제조 방법
US8350249B1 (en) * 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
KR20130108935A (ko) * 2012-03-26 2013-10-07 서울바이오시스 주식회사 질화갈륨계 발광 다이오드
KR101997020B1 (ko) * 2012-03-29 2019-07-08 서울바이오시스 주식회사 근자외선 발광 소자
KR101976455B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US20140264260A1 (en) * 2013-03-15 2014-09-18 Design Express Limited Light emitting structure
DE102013104273A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Anordnung mit säulenartiger Struktur und einer aktiven Zone
US9196787B2 (en) * 2013-06-07 2015-11-24 Glo Ab Nanowire LED structure with decreased leakage and method of making same
JP6409063B2 (ja) * 2013-12-17 2018-10-17 グロ アーベーＧｌｏ Ａｂ 歪み修正面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄ及びその製造方法
FR3026564B1 (fr) * 2014-09-30 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels
FR3029015B1 (fr) * 2014-11-24 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
FR3032064B1 (fr) * 2015-01-22 2018-03-09 Aledia Dispositif optoelectronique et son procede de fabrication
KR102523696B1 (ko) * 2015-11-30 2023-04-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 그 제조방법
WO2016208993A1 (fr) * 2015-06-23 2016-12-29 엘지이노텍 주식회사 Elément d'émission de lumière et dispositif d'affichage comportant un tel elément
FR3041476B1 (fr) * 2015-09-21 2017-12-01 Commissariat Energie Atomique Dispositif electroluminescent a puits quantiques multiples

Also Published As

Publication number Publication date
KR20200094790A (ko) 2020-08-07
EP3732735A1 (fr) 2020-11-04
CN111788701A (zh) 2020-10-16
FR3076399A1 (fr) 2019-07-05
JP2021508951A (ja) 2021-03-11
US11563147B2 (en) 2023-01-24
US20200365762A1 (en) 2020-11-19
KR102572289B1 (ko) 2023-08-28
WO2019129473A1 (fr) 2019-07-04
TW201931622A (zh) 2019-08-01
TWI805657B (zh) 2023-06-21

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