FR3029015B1 - Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication - Google Patents

Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication Download PDF

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Publication number
FR3029015B1
FR3029015B1 FR1461345A FR1461345A FR3029015B1 FR 3029015 B1 FR3029015 B1 FR 3029015B1 FR 1461345 A FR1461345 A FR 1461345A FR 1461345 A FR1461345 A FR 1461345A FR 3029015 B1 FR3029015 B1 FR 3029015B1
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France
Prior art keywords
manufacturing
same
semiconductor elements
optoelectronic device
dimensional semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1461345A
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English (en)
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FR3029015A1 (fr
Inventor
Amelie DUSSAIGNE
Hubert Bono
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1461345A priority Critical patent/FR3029015B1/fr
Priority to PCT/FR2015/053107 priority patent/WO2016083704A1/fr
Priority to CN201580063955.4A priority patent/CN107004571A/zh
Priority to KR1020177015491A priority patent/KR20170089879A/ko
Priority to EP15805588.9A priority patent/EP3224858A1/fr
Priority to US15/527,031 priority patent/US20170365737A1/en
Publication of FR3029015A1 publication Critical patent/FR3029015A1/fr
Application granted granted Critical
Publication of FR3029015B1 publication Critical patent/FR3029015B1/fr
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
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    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
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    • H01L21/02587—Structure
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    • H01L21/02612—Formation types
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    • H01L31/0224—Electrodes
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    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01L33/40—Materials therefor
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    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1461345A 2014-11-24 2014-11-24 Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication Expired - Fee Related FR3029015B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1461345A FR3029015B1 (fr) 2014-11-24 2014-11-24 Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
PCT/FR2015/053107 WO2016083704A1 (fr) 2014-11-24 2015-11-17 Dispositif optoélectronique á éléments semiconducteurs tridimensionnels et son procédé de fabrication
CN201580063955.4A CN107004571A (zh) 2014-11-24 2015-11-17 包括三维半导体元件的光电子装置及其制造方法
KR1020177015491A KR20170089879A (ko) 2014-11-24 2015-11-17 3차원 반도체 소자를 포함하는 광전자 장치 및 이것의 제조 방법
EP15805588.9A EP3224858A1 (fr) 2014-11-24 2015-11-17 Dispositif optoélectronique á éléments semiconducteurs tridimensionnels et son procédé de fabrication
US15/527,031 US20170365737A1 (en) 2014-11-24 2015-11-17 Optoelectronic device comprising three-dimensional semiconductor elements and method for the production thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1461345A FR3029015B1 (fr) 2014-11-24 2014-11-24 Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
FR1461345 2014-11-24

Publications (2)

Publication Number Publication Date
FR3029015A1 FR3029015A1 (fr) 2016-05-27
FR3029015B1 true FR3029015B1 (fr) 2018-03-02

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FR1461345A Expired - Fee Related FR3029015B1 (fr) 2014-11-24 2014-11-24 Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication

Country Status (6)

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US (1) US20170365737A1 (fr)
EP (1) EP3224858A1 (fr)
KR (1) KR20170089879A (fr)
CN (1) CN107004571A (fr)
FR (1) FR3029015B1 (fr)
WO (1) WO2016083704A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3053054B1 (fr) * 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels
FR3076399B1 (fr) * 2017-12-28 2020-01-24 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
RU2758776C2 (ru) * 2019-12-05 2021-11-01 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ изготовления наноколончатой гетероструктуры на основе соединений iii-n

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
FR1461345A (fr) 1964-03-10 1966-02-25 Procédé et appareil pour la trempe du grain
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
JP2007112633A (ja) * 2005-10-17 2007-05-10 Toshiba Corp 窒化物半導体ウェーハ及び窒化物半導体素子
CA2674448A1 (fr) 2007-01-12 2008-07-17 Qunano Ab Nanofils de nitrure et leur procede de fabrication
JP5227224B2 (ja) * 2008-03-14 2013-07-03 パナソニック株式会社 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
WO2010023921A1 (fr) * 2008-09-01 2010-03-04 学校法人上智学院 Réseau d'éléments optiques à semi-conducteurs et procédé de fabrication associé
US8129205B2 (en) * 2010-01-25 2012-03-06 Micron Technology, Inc. Solid state lighting devices and associated methods of manufacturing
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
US9537044B2 (en) * 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
KR102022266B1 (ko) * 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법

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Publication number Publication date
FR3029015A1 (fr) 2016-05-27
CN107004571A (zh) 2017-08-01
US20170365737A1 (en) 2017-12-21
KR20170089879A (ko) 2017-08-04
EP3224858A1 (fr) 2017-10-04
WO2016083704A1 (fr) 2016-06-02

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