FR3003086B1 - Dispositif a semi-conducteur et son procede de fabrication - Google Patents

Dispositif a semi-conducteur et son procede de fabrication Download PDF

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Publication number
FR3003086B1
FR3003086B1 FR1400487A FR1400487A FR3003086B1 FR 3003086 B1 FR3003086 B1 FR 3003086B1 FR 1400487 A FR1400487 A FR 1400487A FR 1400487 A FR1400487 A FR 1400487A FR 3003086 B1 FR3003086 B1 FR 3003086B1
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FR
France
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1400487A
Other languages
English (en)
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FR3003086A1 (fr
Inventor
Anton Mauder
Ralf Otremba
Hans Joachim Schulze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Austria AG
Original Assignee
Infineon Technologies Austria AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Infineon Technologies Austria AG filed Critical Infineon Technologies Austria AG
Publication of FR3003086A1 publication Critical patent/FR3003086A1/fr
Application granted granted Critical
Publication of FR3003086B1 publication Critical patent/FR3003086B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
FR1400487A 2013-03-08 2014-02-26 Dispositif a semi-conducteur et son procede de fabrication Active FR3003086B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13791071 2013-03-08
US13/791,071 US9875935B2 (en) 2013-03-08 2013-03-08 Semiconductor device and method for producing the same

Publications (2)

Publication Number Publication Date
FR3003086A1 FR3003086A1 (fr) 2014-09-12
FR3003086B1 true FR3003086B1 (fr) 2018-03-16

Family

ID=51409676

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1400487A Active FR3003086B1 (fr) 2013-03-08 2014-02-26 Dispositif a semi-conducteur et son procede de fabrication

Country Status (4)

Country Link
US (1) US9875935B2 (fr)
JP (1) JP5972922B2 (fr)
CN (1) CN104037070B (fr)
FR (1) FR3003086B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11721547B2 (en) 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
DE102017119568B4 (de) * 2017-08-25 2024-01-04 Infineon Technologies Ag Siliziumkarbidbauelemente und Verfahren zum Herstellen von Siliziumkarbidbauelementen
DE102019106124A1 (de) * 2018-03-22 2019-09-26 Infineon Technologies Ag Bilden von Halbleitervorrichtungen in Siliciumcarbid
DE102019111377A1 (de) * 2018-05-28 2019-11-28 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers und ein Siliziumkarbid-Halbleiterbauelement
DE102018116051A1 (de) * 2018-07-03 2020-01-09 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
JPWO2021060366A1 (fr) * 2019-09-27 2021-04-01
DE102020215007A1 (de) 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements
CN113178383A (zh) * 2021-03-10 2021-07-27 华为技术有限公司 一种碳化硅基板、碳化硅器件及其基板减薄方法
CN113690183A (zh) * 2021-07-06 2021-11-23 华为数字能源技术有限公司 晶圆的减薄方法
WO2023067386A1 (fr) * 2021-10-22 2023-04-27 Infineon Technologies Ag Fabrication et réutilisation de substrats à semi-conducteurs

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050280155A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor bonding and layer transfer method
US6180444B1 (en) * 1998-02-18 2001-01-30 International Business Machines Corporation Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same
JP4802380B2 (ja) 2001-03-19 2011-10-26 株式会社デンソー 半導体基板の製造方法
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
FR2835097B1 (fr) 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
JP2004311955A (ja) 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
FR2860249B1 (fr) * 2003-09-30 2005-12-09 Michel Bruel Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium
US7476594B2 (en) 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
JP2009509339A (ja) 2005-09-16 2009-03-05 クリー インコーポレイテッド 炭化ケイ素パワーデバイスを有する半導体ウェハを処理する方法
US7635635B2 (en) * 2006-04-06 2009-12-22 Fairchild Semiconductor Corporation Method for bonding a semiconductor substrate to a metal substrate
US8993410B2 (en) * 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
MY149190A (en) 2006-09-20 2013-07-31 Univ Illinois Release strategies for making transferable semiconductor structures, devices and device components
JP2009060142A (ja) 2008-12-01 2009-03-19 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP2011243651A (ja) 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 半導体装置、貼り合せ基板およびそれらの製造方法
CN103222073B (zh) * 2010-08-03 2017-03-29 财团法人工业技术研究院 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
US8822306B2 (en) 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US8916451B2 (en) * 2013-02-05 2014-12-23 International Business Machines Corporation Thin film wafer transfer and structure for electronic devices

Also Published As

Publication number Publication date
JP5972922B2 (ja) 2016-08-17
FR3003086A1 (fr) 2014-09-12
US9875935B2 (en) 2018-01-23
US20140252373A1 (en) 2014-09-11
CN104037070A (zh) 2014-09-10
CN104037070B (zh) 2018-05-04
JP2014179605A (ja) 2014-09-25

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