JP2021508951A - 三次元発光ダイオードを備えた光電子デバイス - Google Patents
三次元発光ダイオードを備えた光電子デバイス Download PDFInfo
- Publication number
- JP2021508951A JP2021508951A JP2020536272A JP2020536272A JP2021508951A JP 2021508951 A JP2021508951 A JP 2021508951A JP 2020536272 A JP2020536272 A JP 2020536272A JP 2020536272 A JP2020536272 A JP 2020536272A JP 2021508951 A JP2021508951 A JP 2021508951A
- Authority
- JP
- Japan
- Prior art keywords
- chemical element
- layer
- optoelectronic device
- chemical
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 37
- 229910052729 chemical element Inorganic materials 0.000 claims abstract description 121
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 230000008859 change Effects 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 239000011777 magnesium Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- -1 Si 2 ON 2 ) Chemical compound 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
基板と、
主に第1の化学元素及び第2の化学元素で形成され、前記基板に置かれている三次元半導体素子と、
前記三次元半導体素子の側壁を少なくとも部分的に覆って、主に前記第1の化学元素及び前記第2の化学元素で形成された少なくとも第1の層、並びに主に前記第1の化学元素、前記第2の化学元素及び第3の化学元素で形成された少なくとも第2の層の積層体を有するアクティブ領域と、
前記アクティブ領域を覆って、主に前記第1の化学元素、前記第2の化学元素、前記第3の化学元素及び第4の化学元素で形成された第3の層と
を備えており、
前記第3の層の前記第3の化学元素及び前記第4の化学元素の質量比率が、前記基板との距離が増加するにつれて増加又は減少し、
前記光電子デバイスは、前記第3の層を覆って、主に前記第1の化学元素及び前記第2の化学元素で形成された第4の層を更に備えていることを特徴とする光電子デバイスを提供する。
Claims (15)
- 光電子デバイス(10)であって、
基板(12)と、
主に第1の化学元素及び第2の化学元素で形成され、前記基板(12)に置かれている三次元半導体素子(20)と、
前記三次元半導体素子(20)の側壁を少なくとも部分的に覆って、主に前記第1の化学元素及び前記第2の化学元素で形成された少なくとも第1の層、並びに主に前記第1の化学元素、前記第2の化学元素及び第3の化学元素で形成された少なくとも第2の層の積層体を有するアクティブ領域(24)と、
前記アクティブ領域を覆って、主に前記第1の化学元素、前記第2の化学元素、前記第3の化学元素及び第4の化学元素で形成された第3の層(26)と
を備えており、
前記第3の層の前記第3の化学元素及び前記第4の化学元素の質量比率が、前記基板(12)との距離が増加するにつれて増加又は減少し、
前記光電子デバイスは、前記第3の層(26)を覆って、主に前記第1の化学元素及び前記第2の化学元素で形成された第4の層(28)を更に備えていることを特徴とする光電子デバイス。 - 前記アクティブ領域(24)は電磁放射線を放射することができ、
前記第3の層(26)は電荷担体遮断層であることを特徴とする請求項1に記載の光電子デバイス。 - 前記第3の層(26)の前記第3の化学元素の含有量が0.1 〜10%の範囲内であることを特徴とする請求項1又は2に記載の光電子デバイス。
- 前記第3の層(26)の前記第4の化学元素の含有量が10〜40%の範囲内であることを特徴とする請求項1〜3のいずれか1つに記載の光電子デバイス。
- 前記第1の化学元素はIII 族元素であることを特徴とする請求項1〜4のいずれか1つに記載の光電子デバイス。
- 前記第1の化学元素はガリウムであることを特徴とする請求項1〜5のいずれか1つに記載の光電子デバイス。
- 前記第2の化学元素はV 族元素であることを特徴とする請求項1〜6のいずれか1つに記載の光電子デバイス。
- 前記第2の化学元素は窒素であることを特徴とする請求項1〜7のいずれか1つに記載の光電子デバイス。
- 前記第3の化学元素はIII 族元素であることを特徴とする請求項1〜8のいずれか1つに記載の光電子デバイス。
- 前記第3の化学元素はインジウムであることを特徴とする請求項1〜9のいずれか1つに記載の光電子デバイス。
- 前記第4の化学元素はIII 族元素であることを特徴とする請求項1〜10のいずれか1つに記載の光電子デバイス。
- 前記第4の化学元素はアルミニウムであることを特徴とする請求項1〜11のいずれか1つに記載の光電子デバイス。
- 前記三次元半導体素子(20)はワイヤ状であることを特徴とする請求項1〜12のいずれか1つに記載の光電子デバイス。
- 前記三次元半導体素子(20)は角錐状であることを特徴とする請求項1〜12のいずれか1つに記載の光電子デバイス。
- 前記第3の層(26)のバンドギャップの最大変化が、前記第3の化学元素を含まない同一の層のバンドギャップの最大変化より小さいことを特徴とする請求項1〜14のいずれか1つに記載の光電子デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1763316 | 2017-12-28 | ||
FR1763316A FR3076399B1 (fr) | 2017-12-28 | 2017-12-28 | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
PCT/EP2018/083890 WO2019129473A1 (fr) | 2017-12-28 | 2018-12-06 | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2021508951A true JP2021508951A (ja) | 2021-03-11 |
Family
ID=62017441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020536272A Pending JP2021508951A (ja) | 2017-12-28 | 2018-12-06 | 三次元発光ダイオードを備えた光電子デバイス |
Country Status (8)
Country | Link |
---|---|
US (1) | US11563147B2 (ja) |
EP (1) | EP3732735A1 (ja) |
JP (1) | JP2021508951A (ja) |
KR (1) | KR102572289B1 (ja) |
CN (1) | CN111788701A (ja) |
FR (1) | FR3076399B1 (ja) |
TW (1) | TWI805657B (ja) |
WO (1) | WO2019129473A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015511776A (ja) * | 2012-03-29 | 2015-04-20 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光素子 |
JP2016521459A (ja) * | 2013-04-26 | 2016-07-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 活性ゾーンを有する半導体積層体を円柱状構造上に備えた発光アセンブリ |
WO2016208993A1 (ko) * | 2015-06-23 | 2016-12-29 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 표시장치 |
JP2017503333A (ja) * | 2013-12-17 | 2017-01-26 | グロ アーベーGlo Ab | 歪み修正面活性領域を有するiii族窒化物ナノワイヤled及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4572963B2 (ja) * | 2008-07-09 | 2010-11-04 | 住友電気工業株式会社 | Iii族窒化物系半導体発光素子、及びエピタキシャルウエハ |
KR101650720B1 (ko) * | 2010-08-04 | 2016-09-06 | 삼성전자주식회사 | 나노로드 기반의 반도체 발광 소자 및 그 제조 방법 |
US8350249B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
KR20130108935A (ko) * | 2012-03-26 | 2013-10-07 | 서울바이오시스 주식회사 | 질화갈륨계 발광 다이오드 |
KR101976455B1 (ko) * | 2012-10-19 | 2019-05-09 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US20140264260A1 (en) * | 2013-03-15 | 2014-09-18 | Design Express Limited | Light emitting structure |
US9196787B2 (en) * | 2013-06-07 | 2015-11-24 | Glo Ab | Nanowire LED structure with decreased leakage and method of making same |
FR3026564B1 (fr) * | 2014-09-30 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a elements semiconducteurs tridimensionnels |
FR3029015B1 (fr) * | 2014-11-24 | 2018-03-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication |
FR3032064B1 (fr) * | 2015-01-22 | 2018-03-09 | Aledia | Dispositif optoelectronique et son procede de fabrication |
KR102523696B1 (ko) * | 2015-11-30 | 2023-04-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 그 제조방법 |
FR3041476B1 (fr) * | 2015-09-21 | 2017-12-01 | Commissariat Energie Atomique | Dispositif electroluminescent a puits quantiques multiples |
-
2017
- 2017-12-28 FR FR1763316A patent/FR3076399B1/fr active Active
-
2018
- 2018-12-06 JP JP2020536272A patent/JP2021508951A/ja active Pending
- 2018-12-06 WO PCT/EP2018/083890 patent/WO2019129473A1/fr unknown
- 2018-12-06 KR KR1020207020756A patent/KR102572289B1/ko active IP Right Grant
- 2018-12-06 US US16/958,130 patent/US11563147B2/en active Active
- 2018-12-06 EP EP18811318.7A patent/EP3732735A1/fr active Pending
- 2018-12-06 CN CN201880090490.5A patent/CN111788701A/zh active Pending
- 2018-12-07 TW TW107144095A patent/TWI805657B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015511776A (ja) * | 2012-03-29 | 2015-04-20 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光素子 |
JP2016521459A (ja) * | 2013-04-26 | 2016-07-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 活性ゾーンを有する半導体積層体を円柱状構造上に備えた発光アセンブリ |
JP2017503333A (ja) * | 2013-12-17 | 2017-01-26 | グロ アーベーGlo Ab | 歪み修正面活性領域を有するiii族窒化物ナノワイヤled及びその製造方法 |
WO2016208993A1 (ko) * | 2015-06-23 | 2016-12-29 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 표시장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20200094790A (ko) | 2020-08-07 |
EP3732735A1 (fr) | 2020-11-04 |
WO2019129473A1 (fr) | 2019-07-04 |
KR102572289B1 (ko) | 2023-08-28 |
FR3076399B1 (fr) | 2020-01-24 |
CN111788701A (zh) | 2020-10-16 |
TWI805657B (zh) | 2023-06-21 |
FR3076399A1 (fr) | 2019-07-05 |
TW201931622A (zh) | 2019-08-01 |
US20200365762A1 (en) | 2020-11-19 |
US11563147B2 (en) | 2023-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8455284B2 (en) | Group III nitride nanorod light emitting device and method of manufacturing thereof | |
TWI603500B (zh) | Nitride semiconductor light-emitting device | |
US8835902B2 (en) | Nano-structured light-emitting devices | |
US10651341B2 (en) | Optoelectronic device and method for manufacturing same | |
US8698123B2 (en) | Semiconductor light emitting device | |
US20080191191A1 (en) | Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well | |
JP6472459B2 (ja) | オプトエレクトロニクス半導体チップの製造方法及びオプトエレクトロニクス半導体チップ | |
KR20220140749A (ko) | 적색 led 및 제작 방법 | |
US9318645B2 (en) | Nitride semiconductor light-emitting element | |
CN106415860B (zh) | 氮化物半导体发光元件 | |
US20170317235A1 (en) | Nitride semiconductor light-emitting element | |
US6835962B2 (en) | Stacked layer structure, light-emitting device, lamp, and light source unit | |
US20150349199A1 (en) | Semiconductor light emitting device and wafer | |
KR102389679B1 (ko) | 3차원 반도체 소자를 구비한 광전자 장치 | |
US20120292648A1 (en) | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer | |
US11563147B2 (en) | Optoelectronic device comprising three-dimensional light-emitting diodes | |
WO2013049817A1 (en) | Opto-electrical devices with reduced efficiency droop and forward voltage | |
JP6482388B2 (ja) | 窒化物半導体発光素子 | |
KR20100034334A (ko) | 산화 아연계 전극을 이용한 발광 다이오드 및 그의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211006 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220818 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221213 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230629 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20230629 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230719 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20230915 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20231211 |